ON Semiconductor MC14069UB Technical data

MC14069UB
Hex Inverter
The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagation delays.
Features
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low−Power TTL Loads or One Low−Power
Schottky TTL Load Over the Rated Temperature Range
Triple Diode Protection on All Inputs
Pin−for−Pin Replacement for CD4069UB
Meets JEDEC UB Specifications
Pb−Free Packages are Available*
MAXIMUM RATINGS (Voltages Referenced to V
Symbol
V
Vin, V
Iin, I
T
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/C From 65C To 125C
DC Supply Voltage Range −0.5 to +18.0 V
DD
Input or Output Voltage Range
out
(DC or Transient) Input or Output Current
out
(DC or Transient) per Pin
P
Power Dissipation, per Package
D
(Note 1)
T
Ambient Temperature Range −55 to +125 °C
A
Storage Temperature Range −65 to +150 °C
stg
T
Lead Temperature
L
(8−Second Soldering)
Parameter Value Unit
)
SS
−0.5 to VDD + 0.5 V
±10 mA
500 mW
260 °C
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MARKING
DIAGRAMS
14
PDIP−14
P SUFFIX
CASE 646
SOIC−14
D SUFFIX
CASE 751A
TSSOP−14 DT SUFFIX
CASE 948G
SOEIAJ−14
F SUFFIX
CASE 965
A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week
MC14069UBCP
AWLYYWW
1
14
AWLYWW
1
14
1
14
MC14069UB
AWLYWW
1
14069U
14
069U
ALYW
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V to the range V
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either V
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 6
(Vin or V
SS
or VDD). Unused outputs must be left open.
SS
) VDD.
out
and V
in
should be constrained
out
1 Publication Order Number:
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
MC14069UB/D
MC14069UB
11
13
IN 1
OUT 1
IN 2
OUT 2
IN 3
OUT 3
V
SS
1 2 3 4
6 7
14 13 12 11 105
9 8
V
DD
IN 6
OUT 6
IN 5
OUT 5
IN 4
OUT 4
Figure 1. Pin Assignment
10
12
2
V
= PIN 14
DD
4
V
= PIN 7
SS
6
INPUT*
V
DD
OUTPUT
8
V
SS
*Double diode protection on all inputs not shown
(1/6 of circuit shown)
1
3
5
9
Figure 2. Circuit SchematicFigure 3. Logic Diagram
20 ns 20 ns
90%
t
50%
10%
THL
90% 50%
10%
t
TLH
INPUT
t
PHL
OUTPUT
t
PLH
V
DD
V
SS
V
OH
V
OL
PULSE
GENERATOR
INPUT
V
14
VSS7
DD
OUTPUT
C
L
Figure 4. Switching Time Test Circuit and Waveforms
ORDERING INFORMATION
Device Package Shipping
MC14069UBCP PDIP−14 500 Units / Tape & Ammo Box MC14069UBCPG PDIP−14
500 Units / Tape & Ammo Box
(Pb−Free) MC14069UBD SOIC−14 55 Units / Rail MC14069UBDG SOIC−14
55 Units / Rail
(Pb−Free) MC14069UBDR2 SOIC−14 2500 Units / Tape & Reel MC14069UBDR2G SOIC−14
2500 Units / Tape & Reel
(Pb−Free) MC14069UBDTR2 TSSOP−14* 2500 Units / Tape & Reel MC14069UBFEL SOEIAJ−14 2000 Units / Tape & Reel MC14069UBFELG SOEIAJ−14
2000 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
MC14069UB
Symbo
V
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
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Î
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Î
Î
Î
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Î
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Î
Î
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Î
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Î
Î
Î
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Î
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Î
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Î
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Î
Î
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Î
Î
Î
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Î
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Î
Î
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
DD
Characteristic
Output Voltage “0” Level
V
= V
in
ООООООООО
DD
Vin = 0 “1” Level
ООООООООО
Input Voltage “0” Level
ООООООООО
= 4.5 Vdc)
(V
O
(V
= 9.0 Vdc)
ООООООООО
O
(V
= 13.5 Vdc)
O
ООООООООО
= 0.5 Vdc)
(V
O
(V
= 1.0 Vdc)
O
ООООООООО
(V
= 1.5 Vdc)
O
Output Drive Current
ООООООООО
(V
= 2.5 Vdc) Source
OH
= 4.6 Vdc)
(V
OH
ООООООООО
(V
= 9.5 Vdc)
OH
ООООООООО
(V
= 13.5 Vdc)
OH
“1” Level
(VOL = 0.4 Vdc) Sink (V
= 0.5 Vdc)
OL
ООООООООО
(V
= 1.5 Vdc)
OL
Input Current Input Capacitance
ООООООООО
(V
= 0)
in
Quiescent Current
(Per Package)
ООООООООО
Total Supply Current
ООООООООО
(Dynamic plus Quiescent, Per Gate) (C
ООООООООО
Output Rise and Fall Times
(3) (4)
= 50 pF)
L
(3)
(CL = 50 pF)
ООООООООО
, t
t
TLH
t
TLH
ООООООООО
t
TLH
= (1.35 ns/pF) C
THL
, t
= (0.60 ns/pF) C
THL
, t
= (0.40 ns/pF) C
THL
Propagation Delay Times
ООООООООО
(CL = 50 pF)
, t
t
PLH
ООООООООО
t
PLH
t
ООООООООО
PLH
= (0.90 ns/pF) CL + 20 ns
PHL
, t
= (0.36 ns/pF) CL + 22 ns
PHL
, t
= (0.26 ns/pF) CL + 17 ns
PHL
+ 33 ns
L
+ 20 ns
L
+ 20 ns
L
(3)
V
Î
V
Î
V
Î
Î
V
Î
Î
I
Î
Î
Î
I
Î
C
Î
I
Î
Î
Î
t
TLH
t
THL
Î
Î
t
PLH
Î
t
PHL
Î
Î
OH
OH
OL
I
DD
I
l
OL
IH
in
T
Vdc
5.0
Î
5.0
Î
IL
Î
5.0
Î
Î
5.0
Î
Î
5.0
5.0
Î
Î
5.0
Î
in
Î
5.0
Î
5.0
Î
Î
,
5.0
Î
Î
,
Î
5.0
Î
Î
Min
10
Î
15
4.95
10
9.95
Î
15
14.95
Î
10
Î
15
Î
10 15
10 15
4.0
8.0
Î
12.5
Î
– 3.0
– 0.64
Î
– 1.6
Î
– 4.2
0.64 10 15
1.6
Î
4.2
15
Î
10
Î
15
ООООООООООООООО
10 15
ООООООООООООООО
Î
10 15
Î
Î
Î
10 15
Î
− 55C
SS
)
Max
0.05
0.05
Î
0.05
Î
Î
1.0
2.0
Î
2.5
Î
Î
Î
Î
Î
Î
± 0.1
Î
0.25
0.5
Î
1.0
Î
Î
Î
Î
Î
25C
Min
ÎÎ
4.95
9.95
ÎÎ
14.95
ÎÎ
ÎÎ
ÎÎ
4.0
8.0
ÎÎ
12.5
ÎÎ
– 2.4
– 0.51
ÎÎ
– 1.3
ÎÎ
– 3.4
0.51
1.3
ÎÎ
3.4
ÎÎ
ÎÎ
(2)
Typ
0 0
Î
0
5.0 10
Î
15
Î
2.25
4.50
Î
6.75
Î
2.75
5.50
Î
8.25
Î
– 4.2
– 0.88
Î
– 2.25
Î
– 8.8
0.88
2.25
Î
8.8
±0.00001
5.0
Î
0.0005
0.0010
Î
0.0015
IT = (0.3 A/kHz) f + IDD/6 I
= (0.6 A/kHz) f + IDD/6
T
I
= (0.9 A/kHz) f + IDD/6
T
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
100
Î
50 40
Î
Î
65
Î
40 30
Î
Max
0.05
0.05
ÎÎ
0.05
ÎÎ
ÎÎ
1.0
2.0
ÎÎ
2.5
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
± 0.1
7.5
ÎÎ
0.25
0.5
ÎÎ
1.0
200
ÎÎ
100
80
ÎÎ
ÎÎ
125
ÎÎ
75 55
ÎÎ
Min
Î
4.95
9.95
Î
14.95
Î
Î
Î
4.0
8.0
Î
12.5
Î
– 1.7
– 0.36
Î
– 0.9
Î
– 2.4
0.36
0.9
Î
2.4
Î
Î
Î
Î
Î
Î
Î
125C
Max
0.05
0.05
Î
0.05
Î
Î
Î
Î
Î
Î
Î
Î
Î
± 1.0
Î
Î
Î
Î
Î
Î
Î
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25C.
4. To calculate total supply current at loads other than 50 pF: I
) = IT(50 pF) + (CL – 50) Vfk
T(CL
where: I
is in A (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.002.
T
1.0
2.0
2.5
7.5 15 30
Unit
Vdc
Î
Vdc
Î
− Vdc
Î
Î
Vdc
Î
Î
mAdc
Î
Î
Î
mAdc
Î
Adc
pF
Î
Adc
Î
Adc
Î
Î
ns
Î
Î
ns
Î
Î
Î
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3
−T−
SEATING PLANE
14 8
17
N
HG
MC14069UB
PACKAGE DIMENSIONS
PDIP−14
P SUFFIX
CASE 646−06
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
B
A
F
L
C
D
14 PL
0.13 (0.005)
K
J
M
M
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 18.80 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78 G 0.100 BSC 2.54 BSC H 0.052 0.095 1.32 2.41 J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L
0.290 0.310 7.37 7.87
M −−− 10 −−− 10 N 0.015 0.039 0.38 1.01
MILLIMETERSINCHES

−T−
SEATING PLANE
SOIC−14
D SUFFIX
CASE 751A−03
ISSUE G
−A−
14
1
G
D 14 PL
0.25 (0.010) A
8
−B−
P
7 PL
M
0.25 (0.010) B
7
C
R X 45
K
M
S
B
T
S
M
M
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL
F
CONDITION.
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7
 
P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
INCHESMILLIMETERS
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4
MC14069UB
PACKAGE DIMENSIONS
TSSOP−14 DT SUFFIX
CASE 948G−01
ISSUE O
0.10 (0.004)
−T−
SEATING PLANE
14X REFK
S
U
T
S
N
0.25 (0.010)
U0.15 (0.006) T
S
2X L/2
0.10 (0.004) V
14
M
8
M
L
PIN 1 IDENT.
1
S
U0.15 (0.006) T
A
−V−
B
N
−U− F
7
DETAIL E
K
K1
J
J1
SECTION N−N
C
D
G
H
DETAIL E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.
DIM MIN MAX MIN MAX
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C −−− 1.20 −−− 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024
−W−
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC M 0 8 0 8

INCHESMILLIMETERS
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5
14 8
1
Z
D
e
b
0.13 (0.005)
M
E
7
A
0.10 (0.004)
H
A
1
E
VIEW P
MC14069UB
PACKAGE DIMENSIONS
SOEIAJ−14
F SUFFIX
CASE 965−01
ISSUE O
L
E
Q
1
M
L
DETAIL P
c
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982. 2 CONTROLLING DIMENSION: MILLIMETER. 3 DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE. 4 TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY. 5 THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
MILLIMETERS
DIM MIN MAX MIN MAX
−−− 2.05 −−− 0.081
A
A
0.05 0.20 0.002 0.008
1
0.35 0.50 0.014 0.020
b
0.18 0.27 0.007 0.011
c
9.90 10.50 0.390 0.413
D
5.10 5.45 0.201 0.215
E
1.27 BSC 0.050 BSC
e
H
7.40 8.20 0.291 0.323
E
0.50 0.85 0.020 0.033
0.50 L
1.10 1.50 0.043 0.059
E
0
M
Q
0.70 0.90 0.028 0.035
1
−−− 1.42 −−− 0.056
Z
INCHES
10
10
0
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MC14069UB/D
6
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