ON Semiconductor MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT Technical data
MBR2060CT, MBR2080CT,
MBR2090CT, MBR20100CT
MBR2060CT and MBR20100CT are Preferred Devices
SWITCHMODE™
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• Pb−Free Packages are Available*
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
60−100 VOLTS
1
2, 4
3
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−220AB
CASE 221A
PLASTIC
1
2
3
MARKING DIAGRAM
AY WW
B20x0G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20x0 = Device Code
x = 6, 8, 9 or 10
G = Pb−Free Device
AKA = Polarity Designator
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 12
1 Publication Order Number:
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
MBR2060CT/D
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
MAXIMUM RATINGS (Per Diode Leg)
MBR
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
) TC = 133°C
R
Peak Repetitive Forward Current
(Rated V
, Square Wave, 20 kHz) TC = 133°C
R
Nonrepetitive Peak Surge Current
Symbol
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
Operating Junction Temperature (Note 1) T
Storage Temperature T
Voltage Rate of Change (Rated VR) dv/dt 10,000
THERMAL CHARACTERISTICS
Maximum Thermal Resistance Junction−to−Case
Junction−to−Ambient
R
R
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(i
= 10 Amps, TC = 125°C)
F
= 10 Amps, TC = 25°C)
(i
F
(i
= 20 Amps, TC = 125°C)
F
(i
= 20 Amps, TC = 25°C)
F
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
(Rated dc Voltage, T
(Rated dc Voltage, T
= 125°C)
C
= 125°C − MBR2060CT only)
C
= 25°C)
C
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
v
2060CT 2080CT 2090CT 20100CT
60 80 90 100 V
R
10 A
20 A
150 A
0.5 A
*65 to +175 °C
*65 to +175 °C
2.0
60
stg
q
q
J
JC
JA
F
0.75
0.85
0.85
0.95
i
R
6.0
20
0.1
Unit
V/ms
°C/W
V
mA
.
q
JA
ORDERING INFORMATION
Device Package Shipping
MBR2060CT TO−220
MBR2060CTG TO−220
50 Units / Rail
(Pb−Free)
MBR2080CT TO−220
MBR2080CTG TO−220
50 Units / Rail
(Pb−Free)
MBR2090CT TO−220
MBR2090CTG TO−220
50 Units / Rail
(Pb−Free)
MBR20100CT TO−220
MBR20100CTG TO−220
50 Units / Rail
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2
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