Page 1
MBR2060CT, MBR2080CT,
MBR2090CT, MBR20100CT
MBR2060CT and MBR20100CT are Preferred Devices
SWITCHMODE™
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• Pb−Free Packages are Available*
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SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
60−100 VOLTS
1
2, 4
3
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−220AB
CASE 221A
PLASTIC
1
2
3
MARKING DIAGRAM
AY WW
B20x0G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20x0 = Device Code
x = 6, 8, 9 or 10
G = Pb−Free Device
AKA = Polarity Designator
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 12
1 Publication Order Number:
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
MBR2060CT/D
Page 2
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
MAXIMUM RATINGS (Per Diode Leg)
MBR
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
) TC = 133°C
R
Peak Repetitive Forward Current
(Rated V
, Square Wave, 20 kHz) TC = 133°C
R
Nonrepetitive Peak Surge Current
Symbol
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
Operating Junction Temperature (Note 1) T
Storage Temperature T
Voltage Rate of Change (Rated VR) dv/dt 10,000
THERMAL CHARACTERISTICS
Maximum Thermal Resistance Junction−to−Case
Junction−to−Ambient
R
R
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(i
= 10 Amps, TC = 125°C)
F
= 10 Amps, TC = 25°C)
(i
F
(i
= 20 Amps, TC = 125°C)
F
(i
= 20 Amps, TC = 25°C)
F
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
(Rated dc Voltage, T
(Rated dc Voltage, T
= 125°C)
C
= 125°C − MBR2060CT only)
C
= 25°C)
C
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
v
2060CT 2080CT 2090CT 20100CT
60 80 90 100 V
R
10 A
20 A
150 A
0.5 A
*65 to +175 °C
*65 to +175 °C
2.0
60
stg
q
q
J
JC
JA
F
0.75
0.85
0.85
0.95
i
R
6.0
20
0.1
Unit
V/ms
°C/W
V
mA
.
q
JA
ORDERING INFORMATION
Device Package Shipping
MBR2060CT TO−220
MBR2060CTG TO−220
50 Units / Rail
(Pb−Free)
MBR2080CT TO−220
MBR2080CTG TO−220
50 Units / Rail
(Pb−Free)
MBR2090CT TO−220
MBR2090CTG TO−220
50 Units / Rail
(Pb−Free)
MBR20100CT TO−220
MBR20100CTG TO−220
50 Units / Rail
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
Page 3
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
50
10
TJ = 150°C
20
150°C
1.0
125°C
10
5.0
3.0
1.0
125°C
TJ = 25°C
100°C
, REVERSE CURRENT (mA)
R
I
0.1
0.01
0.001
100°C
25°C
0.5
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
0.2 0.4 0.8 20 40 60
v
, INSTANTANEOUS VOLTAGE (VOLTS)
F
0.60
0.50.1 0.3 0.7 0.9 100
1.0
0.0001
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode
20
RATED VOLTAGE APPLIED
R
= 2°C/W
q
dc
JC
15
SQUARE WAVE
10
20
15
dc
10
80
(HEATSINK)
R
= 16°C/W
q
JA
(NO HEATSINK)
= 60°C/W
R
q
JA
RATED VOLTAGE
APPLIED
5.0 5.0
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
0
I
80
100 120 140 160 60 80 160
180
TC, CASE TEMPERATURE (°C)
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
I
dc
SQUARE WAVE
0
200
40
100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Typical Current Derating, Case, Per Leg Figure 4. Typical Current Derating, Ambient, Per Leg
AVERAGE POWER (WATTS)
20
TA = 25°C
18
16
14
IPK/IAV = 10
12
10
IPK/IAV = 20
8.0
6.0
4.0
2.0
0
2.0 14 16 18
4.0 8.00
6.0
10 2012
AVERAGE CURRENT (AMPS)
IPK/IAV = 5.0
IPK/IAV = p
dc
SQUARE WAVE
180
Figure 5. Average Power Dissipation and
Average Current
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3
Page 4
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
−T−
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R
J
G
D
N
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
MILLIMETERSINCHES
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
http://onsemi.com
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR2060CT/D
4
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