Datasheet MBR20200CT Datasheet (Fairchild)

Page 1
MBR20200CT Dual High Voltage Schottky Rectifier
Features
• Low Forward Voltage Drop
• High Surge Capability
• RoHS Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C
• Wave Soldering or per MIL-STD-750 Method 2026.
1 2 3
Mark : MBR20200CT
1. Anode
3. Anode
November 2010
2. and Tab Cathode
MBR20200CT — Dual High Voltage Schottky Rectifier
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Unit
V
RRM
V
R
I
F(AV)
I
FSM
T
STG
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
Maximum Repetitive Reverse Voltage 200 V Maximum DC Reverse Voltage 200 V
Average Rectified Forward Current, TC=115°C
10 (Per Leg)
20 (Per Device) Peak Forward Surge Current, 8.3mS Half Sine wave 150 A Storage Temperature Range -55 to +150 °C Operating Junction Temperature 150 °C
= 25°C unless otherwise noted
a
A
Symbol Parameter Max. Unit
R
θJC
R
θJA
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics* T
Thermal Resistance, Junction to Case per Leg 1.5 °C/W Thermal Resistance, Junction to Ambient per Leg 62.5 °C/W
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Unit
= 2 0 0 V
V
I
R
V
F
Reverse Current
Forward Voltage
R
= 2 0 0 V
V
R
= 10A
I
F
= 10A
I
F
= 20A
I
F
= 20A
I
F
* DC Item are tested by Pulse Test : Pulse Width≤300
T
= 25 °C
C
= 125 °C
T
C
T
= 25 °C
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
T
C
μs, Duty Cycle≤2%
0.2 5
0.9
0.8
1.0
0.9
mA
V
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com MBR20200CT Rev. A2 1
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Typical Performance Characteristics
Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current
MBR20200CT — Dual High Voltage Schottky Rectifier
1000
10
[A]
F
1
0.1
Forward Current, I
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
100
[uA]
R
10
1
0.1
Reverse Current, I
0.01
1E-3
50 100 150 200
TJ=125 oC
TJ=75 oC
Reverse Voltage, VR[V]
Figure 3.Junction Capacitance Figure 4. Power Derating
1
0.9
[nF]
J
0.8
0.7
0.6
0.5
0.4
0.3
0.2
f=1mhz
Juntion Capacitance, C
0.1 0246810
Reverse Voltage, VR[V]
30
[A]
25
F(AV)
20
15
10
5
Average Forward Current, I
0
0 25 50 75 100 125 150
DC
Case Temperature, TC[oC]
TJ=25 oC
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com MBR20200CT Rev. A2 2
Page 3
Phisical Dimensions
MBR20200CT — Dual High Voltage Schottky Rectifier
TO-220 [ DUAL GAUGE ]
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com MBR20200CT Rev. A2 3
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Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I50
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