ON Semiconductor EMZ1DXV6T1, EMZ1DXV6T1G, EMZ1DXV6T5G, EMZ1DXV6T5 Service Manual
EMZ1DXV6T1,
EMZ1DXV6T5
Dual General Purpose
Transistors
NPN/PNP Dual (Complementary)
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
• Lead−Free Solder Plating
• Low V
• These are Pb−Free Devices
MAXIMUM RATINGS
Collector− Emitter Voltage V
Collector− Base Voltage V
Emitter− Base Voltage V
Collector Current − Continuous I
THERMAL CHARACTERISTICS
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
, t0.5 V
CE(SAT)
Rating Symbol Value Unit
−60 V
−50 V
−6.0 V
−100 mAdc
357 (Note 1)
2.9 (Note 1)mWmW/°C
350
(Note 1)
500 (Note 1)
4.0 (Note 1)mWmW/°C
250
(Note 1)
− 55 to +150 °C
Characteristic
Characteristic
CEO
CBO
EBO
C
Symbol Max Unit
P
D
R
q
JA
Symbol Max Unit
P
D
R
q
JA
TJ, T
stg
°C/W
°C/W
http://onsemi.com
(3)
Q
1
(4) (5) (6)
6
1
SOT−563
CASE 463A
STYLE 1
(1)(2)
Q
2
MARKING DIAGRAM
3Z M G
G
3Z = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 1
1 Publication Order Number:
EMZ1DXV6/D
EMZ1DXV6T1, EMZ1DXV6T5
ELECTRICAL CHARACTERISTICS (T
= 25°C)
A
Characteristic Symbol Min Typ Max Unit
Q1: PNP
Collector−Base Breakdown Voltage
(IC = −50 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage
(IE = −50 mAdc, IE = 0)
Collector−Base Cutoff Current
(VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
f
C
FE
T
OB
−60 − − Vdc
−50 − − Vdc
−6.0 − − Vdc
− − −0.5 nA
− − −0.5
− − −0.5
120 − 560
− 140 −
− 3.5 − pF
Q2: NPN
Collector-Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 50 mAdc, IE = 0)
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter-Base Cutoff Current
(VEB = 7.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
DC Current Gain (Note 3)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
f
C
FE
T
OB
60 − − Vdc
50 − − Vdc
7.0 − − Vdc
− − 0.5
− − 0.5
− − 0.4
120 − 560
− 180 − MHz
− 2.0 − pF
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
mA
Vdc
−
MHz
mA
mA
Vdc
−
ORDERING INFORMATION
Device Package Shipping
EMZ1DXV6T1 SOT−563* 4000 Units / Tape & Reel
EMZ1DXV6T1G SOT−563* 4000 Units / Tape & Reel
EMZ1DXV6T5 SOT−563* 8000 Units / Tape & Reel
EMZ1DXV6T5G SOT−563* 8000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
†
http://onsemi.com
2
Loading...