ON Semiconductor EMC2DXV5T1-D, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Service Manual

EMC2DXV5T1,

EMC3DXV5T1,

EMC4DXV5T1,

EMC5DXV5T1

Preferred Devices

Dual Common

Base−Collector Bias

Resistor Transistors

NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1 series, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•These are Pb−Free Devices

MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)

Rating	Symbol	Value	Unit
Collector-Base Voltage	VCBO	50	Vdc
Collector-Emitter Voltage	VCEO	50	Vdc
Collector Current	IC	100	mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

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2

1

R1

R2

Q2

R2

Q1

R1

4

5

5

1

SOT−553

CASE 463B

MARKING DIAGRAM

		Ux M G
		G
Ux	=	Specific Device Code
		x = C, 3, E, or 5
M	=	Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

♥ Semiconductor Components Industries, LLC, 2007	1	Publication Order Number:
April, 2007 − Rev. 5		EMC2DXV5T1/D

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
ONE JUNCTION HEATED
Total Device Dissipation	PD
TA = 25°C		357 (Note 1)	mW
Derate above 25°C		2.9 (Note 1)	mW/°C
Thermal Resistance, Junction-to-Ambient	RqJA	350 (Note 1)	°C/W
BOTH JUNCTIONS HEATED
Total Device Dissipation	PD
TA = 25°C		500 (Note 1)	mW
Derate above 25°C		4.0 (Note 1)	mW/°C
Thermal Resistance, Junction-to-Ambient	RqJA	250 (Note 1)	°C/W
Junction and Storage Temperature	TJ, Tstg	−55 to +150	°C

1. FR−4 @ Minimum Pad

DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES

			Transistor 1 − PNP		Transistor 2 − NPN
								Shipping†
	Device	Marking	R1 (K)	R2 (K)	R1 (K)	R2 (K)	Package
	EMC2DXV5T1						SOT−553*	4000 / Tape & Reel
	EMC2DXV5T1G	UC	22	22	22	22	SOT−553*
	EMC2DXV5T5						SOT−553*	8000 / Tape & Reel
	EMC2DXV5T5G						SOT−553*
	EMC3DXV5T1						SOT−553*	4000 / Tape & Reel
	EMC3DXV5T1G	U3	10	10	10	10	SOT−553*
	EMC3DXV5T5						SOT−553*	8000 / Tape & Reel
	EMC3DXV5T5G						SOT−553*
	EMC4DXV5T1						SOT−553*	4000 / Tape & Reel
	EMC4DXV5T1G	UE	10	47	47	47	SOT−553*
	EMC4DXV5T5						SOT−553*	8000 / Tape & Reel
	EMC4DXV5T5G						SOT−553*
	EMC5DXV5T1						SOT−553*	4000 / Tape & Reel
	EMC5DXV5T1G	U5	4.7	10	47	47	SOT−553*
	EMC5DXV5T5						SOT−553*	8000 / Tape & Reel
	EMC5DXV5T5G						SOT−553*

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

(MILLIWATTS)	250
	200
DISSIPATION	150
	100
, POWER	50		RqJA = 833°C/W
D
P
	0−50	0	50	100	150
		TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)		ICBO	−	−	100	nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)		ICEO	−	−	500	nAdc
Emitter-Base Cutoff Current	EMC2DXV5T1	IEBO	−	−	0.2	mAdc
(VEB = 6.0, IC = 5.0 mA)	EMC3DXV5T1		−	−	0.5
	EMC4DXV5T1		−	−	0.2
	EMC5DXV5T1		−	−	1.0
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)		V(BR)CBO	50	−	−	Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)		V(BR)CEO	50	−	−	Vdc
DC Current Gain	EMC2DXV5T1	hFE	60	100	−
(VCE = 10 V, IC = 5.0 mA)	EMC3DXV5T1		35	60	−
	EMC4DXV5T1		80	140	−
	EMC5DXV5T1		20	35	−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)		VCE(SAT)	−	−	0.25	Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)		VOL	−	−	0.2	Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)		VOH	4.9	−	−	Vdc
Input Resistor	EMC2DXV5T1	R1	15.4	22	28.6	kW
	EMC3DXV5T1, EMC4DXV5T1		7.0	10	13
	EMC5DXV5T1		3.3	4.7	6.1
Resistor Ratio	EMC2DXV5T1	R1/R2	0.8	1.0	1.2
	EMC3DXV5T1		0.8	1.0	1.2
	EMC4DXV5T1		0.17	0.21	0.25
	EMC5DXV5T1		0.38	0.47	0.56
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)		ICBO	−	−	100	nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)		ICEO	−	−	500	nAdc
Emitter-Base Cutoff Current	EMC2DXV5T1	IEBO	−	−	0.2	mAdc
(VEB = 6.0, IC = 5.0 mA)	EMC3DXV5T1		−	−	0.5
	EMC4DXV5T1, EMC5DXV5T1		−	−	0.1
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)		V(BR)CBO	50	−	−	Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)		V(BR)CEO	50	−	−	Vdc
DC Current Gain	EMC2DXV5T1	hFE	60	100	−
(VCE = 10 V, IC = 5.0 mA)	EMC3DXV5T1		35	60	−
	EMC4DXV5T1, EMC5DXV5T1		80	140	−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)		VCE(SAT)	−	−	0.25	Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)		VOL	−	−	0.2	Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)		VOH	4.9	−	−	Vdc
Input Resistor	EMC2DXV5T1	R1	15.4	22	28.6	kW
	EMC3DXV5T1		7.0	10	13
	EMC4DXV5T1, EMC5DXV5T1		33	47	61
Resistor Ratio	EMC2DXV5T1	R1/R2	0.8	1.0	1.2
	EMC3DXV5T1		0.8	1.0	1.2
	EMC4DXV5T1, EMC5DXV5T1		0.8	1.0	1.2

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EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR

	(V)	10
	VOLTAGE
			IC/IB = 10
	SATURATION	1			25°C
			TA = −25°C
	EMITTER				75°C
		0.1
	COLLECTOR
		0.01
	,	0	20	40	50
	CE(sat)
			IC, COLLECTOR CURRENT (mA)
	V		Figure 2. VCE(sat) versus IC

	4
										f = 1 MHz
										lE = 0 mA
(pF)	3									TA = 25°C
CAPACITANCE,	2
ob
	1
C
	0
	0		10		20		30		40				50

VR, REVERSE BIAS VOLTAGE (V)

Figure 4. Output Capacitance

	1000
			VCE = 10 V
GAIN			TA = 75°C
, DC CURRENT
			25°C
	100		−25°C
FE
h
	10
	1	10	100

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

	100				25°C
				75°C
(mA)						TA = −25°C
	10
CURRENT	1
, COLLECTOR	0.1
C
I	0.01
											VO = 5 V
	0.001	0	1	2	3	4	5	6	7	8	9	10
						Vin, INPUT VOLTAGE (V)

Figure 5. Output Current versus Input Voltage

	100		VO = 0.2 V
(VOLTS)				TA = −25°C
, INPUT VOLTAGE	10				25°C
				75°C
	1
in
V
	0.1	0	10	20	30	40	50

IC, COLLECTOR CURRENT (mA)

Figure 6. Input Voltage versus Output Current

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