ON Semiconductor EMG2DXV5T1, EMG2DXV5T1G, EMG5DXV5T1, EMG5DXV5T1G, EMG5DXV5T5G Service Manual

EMG2DXV5T1,
EMG5DXV5T1

Preferred Devices

Dual Bias Resistor
Transistors

NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT−553 package which is designed for low power surface mount
applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• Available in 8 mm, 7 inch Tape and Reel

• Lead−Free Solder Plating

• Pb−Free Packages are Available

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation
TA = 25°C

Derate above 25°C

Thermal Resistance −

Junction-to-Ambient

Thermal Resistance −

Junction-to-Lead

Junction and Storage
Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

= 25°C unless otherwise noted)

A

CBO
CEO

100 mAdc

230 (Note 1)
338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

540 (Note 1)
370 (Note 2)

264 (Note 1)
287 (Note 2)

− 55 to +150 °C

P

R

R

TJ, T

C

D

q

JA

q

JL

stg

50 Vdc
50 Vdc

mW

°C/W

°C/W

°C/W

http://onsemi.com

NPN SILICON

BIAS RESISTOR

TRANSISTORS

(3) (1)(2)

R1

R2

DT

r2

(4)

5

1

CASE 463B

MARKING
DIAGRAM

5

XX M G

G

1

xx = Device Code

xx= UF (EMG5)

M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

UP (EMG2)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

R2

SOT−553

R1

DT

r1

(5)

© Semiconductor Components Industries, LLC, 2005

October, 2005 − Rev. 0

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

EMG5DXV5/D

EMG2DXV5T1, EMG5DXV5T1

DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R1 (K) R2 (K)

EMG2DXV5T1 SOT−553 UP 47 47
EMG5DXV5T1 SOT−553 UF 10 47

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS (Q1 & Q2)

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)EMG2DXV5T1

EMG5DXV5T1
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

ON CHARACTERISTICS (Q1 & Q2) (Note 3)

DC Current Gain (VCE = 10 V, IC = 5.0 mA) EMG2DXV5T1

EMG5DXV5T1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) EMG2DXV5T1
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) EMG5DXV5T1

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor EMG2DXV5T1

EMG5DXV5T1
Resistor Ratio EMG2DXV5T1

EMG5DXV5T1

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

CBO
CEO

I

EBO

V

(BR)CBO

V

(BR)CEO

h

CE(sat)

V

V

R

R1/R

FE

OL

OH

− − 100 nAdc

− − 500 nAdc

−

−

−

−

0.1

0.2

mAdc

50 − − Vdc
50 − − Vdc

80
80

140
140

−

−

− − 0.25 Vdc
Vdc

−

−

−

−

0.2

0.2

4.9 − − Vdc

1

2

32.9

7.0

0.8

0.17

47
10

1.0

0.21

61.1
13

1.2

0.25

kW

350

300

250

200

150

100

, POWER DISSIPATION (mW)

D

50

P

0

−50 0 50 100 150

R

q

JA

= 370°C/W

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

http://onsemi.com

2

EMG2DXV5T1, EMG5DXV5T1

S

TYPICAL ELECTRICAL CHARACTERISTICS — EMG2DXV5T1

10

IC/IB = 10

1

0.1

, MAXIMUM COLLECTOR VOLTAGE (VOLT

0.01

CE(sat)

0

V

20 40

IC, COLLECTOR CURRENT (mA)

Figure 2. V

1

0.8

0.6

CE(sat)

TA=−25°C

versus I

C

25°C

75°C

50

f = 1 MHz
IE = 0 V
TA = 25°C

1000

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

1 100

IC, COLLECTOR CURRENT (mA)

10

VCE = 10 V

TA=75°C

Figure 3. DC Current Gain

100

75°C

10

1

25°C

TA=−25°C

25°C

−25°C

0.4

, CAPACITANCE (pF)

ob

C

0.2

0

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 4. Output Capacitance

100

VO = 0.2 V

10

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1
010 203040 50

0.1

0.01

, COLLECTOR CURRENT (mA) h

C

I

50

0.001
0246810

Figure 5. Output Current versus Input Voltage

TA=−25°C

IC, COLLECTOR CURRENT (mA)

VO = 5 V

Vin, INPUT VOLTAGE (VOLTS)

25°C

75°C

Figure 6. Input Voltage versus Output Current

http://onsemi.com

3

EMG2DXV5T1, EMG5DXV5T1

TYPICAL ELECTRICAL CHARACTERISTICS − EMG5DXV5T1

1

IC/IB = 10

0.1

0.01

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

CE(sat)

0.001

V

020406080

IC, COLLECTOR CURRENT (mA)

Figure 7. V

4

3.5

3

2.5

2

1.5

, CAPACITANCE (pF)

ob

1

C

0.5

0

0 2 4 6 8 101520253035404550

VR, REVERSE BIAS VOLTAGE (VOLTS)

CE(sat)

TA=−25°C

versus I

25°C

75°C

C

f = 1 MHz
lE = 0 V
TA = 25°C

300

VCE = 10

250

200

150

100

, DC CURRENT GAIN

FE

h

50

0

1 10 100

2468 1520405060708090

IC, COLLECTOR CURRENT (mA)

TA=75°C

25°C

−25°C

Figure 8. DC Current Gain

100

75°C

10

, COLLECTOR CURRENT (mA)

C

I

1

0246810

Vin, INPUT VOLTAGE (VOLTS)

25°C

TA=−25°C

VO = 5 V

Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage

10

VO= 0.2 V

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1
01020304050

IC, COLLECTOR CURRENT (mA)

TA=−25°C

25°C

75°C

Figure 11. Input Voltage versus Output Current

http://onsemi.com

4

EMG2DXV5T1, EMG5DXV5T1

TYPICAL APPLICATIONS FOR NPN BRTs

+12 V

FROM mP OR

OTHER LOGIC

Figure 12. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

ISOLATED

LOAD

V

CC

OUT

IN

Figure 13. Open Collector Inverter:

Inverts the Input Signal

+12 V

LOAD

Figure 14. Inexpensive, Unregulated Current Source

http://onsemi.com

5

EMG2DXV5T1, EMG5DXV5T1

DEVICE ORDERING INFORMATION

Device Package Shipping

EMG2DXV5T1 SOT−553 4000 / Tape & Reel
EMG2DXV5T1G SOT−553

(Pb−Free)
EMG2DXV5T5 SOT−553 8000 / Tape & Reel
EMG2DXV5T5G SOT−553

(Pb−Free)
EMG5DXV5T1 SOT−553 4000 / Tape & Reel
EMG5DXV5T1G SOT−553

(Pb−Free)
EMG5DXV5T5 SOT−553 8000 / Tape & Reel

EMG5DXV5T5G SOT−553

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

4000 / Tape & Reel

8000 / Tape & Reel

4000 / Tape & Reel

8000 / Tape & Reel

†

http://onsemi.com

6

SOT−553

D

−X−

45

12 3

e

EMG2DXV5T1, EMG5DXV5T1

E

−Y−

b 5 PL

0.08 (0.003) X

M

PACKAGE DIMENSIONS

XV5 SUFFIX

5−LEAD PACKAGE

CASE 463B−01

ISSUE B

A

Y

L

H

E

c

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.

DIMAMIN NOM MAX MIN

b 0.17 0.22 0.27 0.007
c
D 1.50 1.60 1.70 0.059
E 1.10 1.20 1.30 0.043
e 0.50 BSC
L 0.10 0.20 0.30 0.004

H

E

MILLIMETERS

0.50 0.55 0.60 0.020

0.08 0.13 0.18

1.50 1.60 1.70 0.059 0.063 0.067

0.003 0.005 0.007

INCHES

NOM MAX

0.022 0.024

0.009 0.011

0.063 0.067

0.047 0.051

0.020 BSC

0.008 0.012

SOLDERING FOOTPRINT*

0.3

0.0118

0.45

0.0177

1.0

1.35

0.0531

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.0394

0.5

0.0197

0.5

0.0197

SCALE 20:1

ǒ

inches

mm

Ǔ

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

7

ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your
local Sales Representative.

EMG5DXV5/D