ON Semiconductor EMG2DXV5T1, EMG2DXV5T1G, EMG5DXV5T1, EMG5DXV5T1G, EMG5DXV5T5G Service Manual

EMG2DXV5T1,
EMG5DXV5T1

Preferred Devices

Dual Bias Resistor
Transistors

NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT−553 package which is designed for low power surface mount
applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• Available in 8 mm, 7 inch Tape and Reel

• Lead−Free Solder Plating

• Pb−Free Packages are Available

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation
TA = 25°C

Derate above 25°C

Thermal Resistance −

Junction-to-Ambient

Thermal Resistance −

Junction-to-Lead

Junction and Storage
Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

= 25°C unless otherwise noted)

A

CBO
CEO

100 mAdc

230 (Note 1)
338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

540 (Note 1)
370 (Note 2)

264 (Note 1)
287 (Note 2)

− 55 to +150 °C

P

R

R

TJ, T

C

D

q

JA

q

JL

stg

50 Vdc
50 Vdc

mW

°C/W

°C/W

°C/W

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NPN SILICON

BIAS RESISTOR

TRANSISTORS

(3) (1)(2)

R1

R2

DT

r2

(4)

5

1

CASE 463B

MARKING
DIAGRAM

5

XX M G

G

1

xx = Device Code

xx= UF (EMG5)

M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

UP (EMG2)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

R2

SOT−553

R1

DT

r1

(5)

© Semiconductor Components Industries, LLC, 2005

October, 2005 − Rev. 0

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

EMG5DXV5/D

EMG2DXV5T1, EMG5DXV5T1

DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R1 (K) R2 (K)

EMG2DXV5T1 SOT−553 UP 47 47
EMG5DXV5T1 SOT−553 UF 10 47

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS (Q1 & Q2)

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)EMG2DXV5T1

EMG5DXV5T1
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

ON CHARACTERISTICS (Q1 & Q2) (Note 3)

DC Current Gain (VCE = 10 V, IC = 5.0 mA) EMG2DXV5T1

EMG5DXV5T1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) EMG2DXV5T1
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) EMG5DXV5T1

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor EMG2DXV5T1

EMG5DXV5T1
Resistor Ratio EMG2DXV5T1

EMG5DXV5T1

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

CBO
CEO

I

EBO

V

(BR)CBO

V

(BR)CEO

h

CE(sat)

V

V

R

R1/R

FE

OL

OH

− − 100 nAdc

− − 500 nAdc

−

−

−

−

0.1

0.2

mAdc

50 − − Vdc
50 − − Vdc

80
80

140
140

−

−

− − 0.25 Vdc
Vdc

−

−

−

−

0.2

0.2

4.9 − − Vdc

1

2

32.9

7.0

0.8

0.17

47
10

1.0

0.21

61.1
13

1.2

0.25

kW

350

300

250

200

150

100

, POWER DISSIPATION (mW)

D

50

P

0

−50 0 50 100 150

R

q

JA

= 370°C/W

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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EMG2DXV5T1, EMG5DXV5T1

S

TYPICAL ELECTRICAL CHARACTERISTICS — EMG2DXV5T1

10

IC/IB = 10

1

0.1

, MAXIMUM COLLECTOR VOLTAGE (VOLT

0.01

CE(sat)

0

V

20 40

IC, COLLECTOR CURRENT (mA)

Figure 2. V

1

0.8

0.6

CE(sat)

TA=−25°C

versus I

C

25°C

75°C

50

f = 1 MHz
IE = 0 V
TA = 25°C

1000

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

1 100

IC, COLLECTOR CURRENT (mA)

10

VCE = 10 V

TA=75°C

Figure 3. DC Current Gain

100

75°C

10

1

25°C

TA=−25°C

25°C

−25°C

0.4

, CAPACITANCE (pF)

ob

C

0.2

0

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 4. Output Capacitance

100

VO = 0.2 V

10

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1
010 203040 50

0.1

0.01

, COLLECTOR CURRENT (mA) h

C

I

50

0.001
0246810

Figure 5. Output Current versus Input Voltage

TA=−25°C

IC, COLLECTOR CURRENT (mA)

VO = 5 V

Vin, INPUT VOLTAGE (VOLTS)

25°C

75°C

Figure 6. Input Voltage versus Output Current

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