ON Semiconductor EMF5XV6T5, EMF5XV6T5G Service Manual

EMF5XV6T5

ns

Preferred Devices

Power Management,
Dual Transistors

NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating Symbol Value Unit

Q

(T

= 25°C unless otherwise noted, common for Q1 and Q2)

1

A

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
Electrostatic Discharge ESD HBM Class 1

Q2 (TA = 25°C)

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Peak

Collector Current − Continuous

Electrostatic Discharge ESD HBM Class 3B

CBO
CEO

C

CEO
CBO
EBO

I

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

TA = 25°C

Derate above 25°C
Thermal Resistance,

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

TA = 25°C

Derate above 25°C
Thermal Resistance,

Junction-to-Ambient

Junction and Storage

Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Single pulse 1.0 ms.

2. FR−4 @ Minimum Pad.

Symbol Max Unit

P

D

R

q

JA

Symbol Max Unit

P

D

R

q

JA

TJ, T

stg

50 Vdc
50 Vdc

100 mAdc

MM Class B

−12 Vdc

−15 Vdc

−6.0 Vdc

−1.0 (Note 1)

−0.5

MM Class C

357 (Note 2)

2.9 (Note 2)mWmW/°C

350 (Note 2) °C/W

500 (Note 2)

4.0 (Note 2)

250 (Note 2) °C/W

− 55 to +150 °C

Adc

mW

mW/°C

http://onsemi.com

(1)(2)(3)

Q

1

Q

2

R

2

R

1

(4) (5) (6)

6

1

SOT−563

CASE 463A

PLASTIC

MARKING DIAGRAM

UY M G

G

1

UY = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

EMF5XV6T5 SOT−563

(Pb−Free)

EMF5XV6T5G SOT−563

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specificatio
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

8000/Tape & Reel

8000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2005

November, 2005 − Rev. 2

1 Publication Order Number:

EMF5XV6T5/D

EMF5XV6T5

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, common for Q1 and Q2)

A

Characteristic Symbol Min Typ Max Unit

Q

1

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) I
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V

CBO
CEO

EBO
(BR)CBO
(BR)CEO

− − 100 nAdc

− − 500 nAdc

− − 0.1 mAdc
50 − − Vdc
50 − − Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain (VCE = 10 V, IC = 5.0 mA) h
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

FE

CE(sat)

V

OL

V

OH

80 140 −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc
Input Resistor R1 32.9 47 61.1
Resistor Ratio R1/R2 0.8 1.0 1.2

Q

2

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V
Collector−Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V
Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V
Collector Cutoff Current (VCB = −15 Vdc, IE = 0) I
Emitter Cutoff Current (VEB = −6.0 Vdc) I

(BR)CEO
(BR)CBO
(BR)EBO

CBO
EBO

−12 − − Vdc

−15 − − Vdc

−6.0 − − Vdc

− − −0.1

− − −0.1

ON CHARACTERISTICS

DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) h
Collector−Emitter Saturation Voltage (Note 4) (IC = −200 mA, IB = −10 mA) V
Base−Emitter Saturation Voltage (Note 4) (IC = −150 mA, IB = −20 mA) V
Base−Emitter Turn−on Voltage (Note 4) (IC = −150 mA, VCE = −3.0 V) V
Input Capacitance (VEB = 0 V, f = 1.0 MHz) C
Output Capacitance (VCB = 0 V, f = 1.0 MHz) C
Turn−On Time (IBI = −50 mA, IC = −500 mA, RL = 3.0 W)
Turn−Off Time (I

= IB2 = −50 mA, IC = −500 mA, RL = 3.0 W)

B1

FE
CE(sat)
BE(sat)

BE(on)

ibo

obo

t

on

t

off

270 − 680

− − −250 mV

− −0.81 −0.90 V

− −0.81 −0.875 V

− 52 − pF

− 30 − pF

− 50 − ns

− 80 − ns

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

k W

mAdc
mAdc

300

250

200

150

100

, POWER DISSIPATION (mW)

50

D

P

0

−50 0 50 100 150

R

= 833°C/W

q

JA

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

http://onsemi.com

2

EMF5XV6T5

S

TYPICAL ELECTRICAL CHARACTERISTICS FOR Q1

10

IC/IB = 10

1

25°C

75°C

50

f = 1 MHz
IE = 0 V
TA = 25°C

CE(sat)

TA=−25°C

versus I

C

0.1

, MAXIMUM COLLECTOR VOLTAGE (VOLT

0.01

CE(sat)

0

V

20 40

IC, COLLECTOR CURRENT (mA)

Figure 2. V

1

0.8

0.6

1000

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

1 100

IC, COLLECTOR CURRENT (mA)

10

VCE = 10 V

TA=75°C

Figure 3. DC Current Gain

100

75°C

10

1

25°C

TA=−25°C

25°C

−25°C

0.4

, CAPACITANCE (pF)

ob

C

0.2

0

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 4. Output Capacitance

100

VO = 0.2 V

10

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1
010 203040 50

0.1

0.01

, COLLECTOR CURRENT (mA) h

C

I

50

0.001
0246810

Figure 5. Output Current versus Input Voltage

TA=−25°C

IC, COLLECTOR CURRENT (mA)

VO = 5 V

Vin, INPUT VOLTAGE (VOLTS)

25°C

75°C

Figure 6. Input Voltage versus Output Current

http://onsemi.com

3

EMF5XV6T5

h

, DC CURRENT GAIN

1

1

1

V

, COLLECTOR EMITTER

TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2

, COLLECTOR EMITTER

SATURATION VOLTAGE (V)

CE(sat)

V

0.001

FE

1

IC/IB = 200

0.1
100

50

0.01
10

0.001
IC, COLLECTOR CURRENT (AMPS)

0.10.01

Figure 7. Collector Emitter Saturation Voltage

vs. Collector Current

600

500

125°C

400

300

25°C

200

TA = −55°C

100

0

0.001
IC, COLLECTOR CURRENT (AMPS)

Figure 9. DC Current Gain

TA = 25°C

VCE = 1.0 V

1

10.10.01

1

IC/IB = 100

0.1

, COLLECTOR EMITTER

SATURATION VOLTAGE (V)

CE(sat)

V

0.01

0.001 0.1

0.01

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Collector Emitter Saturation Voltage

vs. Collector Current

1

IC/IB = 50

0.1

, COLLECTOR EMITTER

SATURATION VOLTAGE (V)

CE(sat)

V

0.01

0.001 0.10.01
IC, COLLECTOR CURRENT (AMPS)

Figure 10. Collector Emitter Saturation Voltage

vs. Collector Current

25°C

−55°C

TA = 125°C

25°C

−55°C
TA = 125°C

1

0.9

SATURATION VOLTAGE (V)

CE(sat)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

5.0 mA

50 mA

10 mA

IB, BASE CURRENT (AMPS)

250 mA
100 mA

IC = 1.0 A

500 mA

Figure 11. Collector Emitter Saturation Voltage

vs Base Current

TA = 25°C

0.1

10.010.0010.00010.00001

http://onsemi.com

4

1.2

1

−55°C

0.8

0.6

, BASE EMITTER

0.4

BE(sat)

V

0.2

SATURATION VOLTAGE (V)

0

0.001 0.10.01
IC, COLLECTOR CURRENT (AMPS)

25°C

TA = 125°C

Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

EMF5XV6T5

1.2
VCE = 3.0 V

1

0.8

0.6

VOLTAGE (V)

0.4

, BASE EMITTER TURN−ON

0.2

BE(on)

V

0

0.001
IC, COLLECTOR CURRENT (AMPS)

Figure 13. Base Emitter Turn−On Voltage vs.

Collector Current

−55°C

25°C

TA = 125°C

35

30

25

55
50

45

40

35

30

, INPUT CAPACITANCE

ibo

C

25

0.10.01

20

1

VEB, EMITTER BASE VOLTAGE

f = 1 MHz
I

= 0 A

C

= 25°C

T

A

54

63210

Figure 14. Input Capacitance

f = 1 MHz
IE = 0 A
TA = 25°C

20

, OUTPUT CAPACITANCE

15

obo

C

10

0

VCB, COLLECTOR BASE VOLTAGE

12108

14642

Figure 15. Output Capacitance

http://onsemi.com

5

EMF5XV6T5

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

D

−X−

45L6

12 3

e

E

−Y−

b 6 5 PL

0.08 (0.003) X

M

Y

A

H

E

C

SOLDERING FOOTPRINT*

0.3

0.0118

1.0

1.35

0.0531

0.0394

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60

b 0.17 0.22 0.27

C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70

E 1.10 1.20 1.30
e 0.5 BSC
L 0.10 0.20 0.30

H

1.50 1.60 1.70

E

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

0.45

0.0177

0.5

0.5

0.0197

0.0197

mm

ǒ

SCALE 20:1

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your
local Sales Representative.

EMF5XV6T5/D

6