ON Semiconductor EMF5XV6T5, EMF5XV6T5G Service Manual

EMF5XV6T5

ns

Preferred Devices

Power Management,
Dual Transistors

NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating Symbol Value Unit

Q

(T

= 25°C unless otherwise noted, common for Q1 and Q2)

1

A

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
Electrostatic Discharge ESD HBM Class 1

Q2 (TA = 25°C)

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Peak

Collector Current − Continuous

Electrostatic Discharge ESD HBM Class 3B

CBO
CEO

C

CEO
CBO
EBO

I

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

TA = 25°C

Derate above 25°C
Thermal Resistance,

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

TA = 25°C

Derate above 25°C
Thermal Resistance,

Junction-to-Ambient

Junction and Storage

Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Single pulse 1.0 ms.

2. FR−4 @ Minimum Pad.

Symbol Max Unit

P

D

R

q

JA

Symbol Max Unit

P

D

R

q

JA

TJ, T

stg

50 Vdc
50 Vdc

100 mAdc

MM Class B

−12 Vdc

−15 Vdc

−6.0 Vdc

−1.0 (Note 1)

−0.5

MM Class C

357 (Note 2)

2.9 (Note 2)mWmW/°C

350 (Note 2) °C/W

500 (Note 2)

4.0 (Note 2)

250 (Note 2) °C/W

− 55 to +150 °C

Adc

mW

mW/°C

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(1)(2)(3)

Q

1

Q

2

R

2

R

1

(4) (5) (6)

6

1

SOT−563

CASE 463A

PLASTIC

MARKING DIAGRAM

UY M G

G

1

UY = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

EMF5XV6T5 SOT−563

(Pb−Free)

EMF5XV6T5G SOT−563

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specificatio
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

8000/Tape & Reel

8000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2005

November, 2005 − Rev. 2

1 Publication Order Number:

EMF5XV6T5/D

EMF5XV6T5

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, common for Q1 and Q2)

A

Characteristic Symbol Min Typ Max Unit

Q

1

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) I
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V

CBO
CEO

EBO
(BR)CBO
(BR)CEO

− − 100 nAdc

− − 500 nAdc

− − 0.1 mAdc
50 − − Vdc
50 − − Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain (VCE = 10 V, IC = 5.0 mA) h
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

FE

CE(sat)

V

OL

V

OH

80 140 −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc
Input Resistor R1 32.9 47 61.1
Resistor Ratio R1/R2 0.8 1.0 1.2

Q

2

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V
Collector−Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V
Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V
Collector Cutoff Current (VCB = −15 Vdc, IE = 0) I
Emitter Cutoff Current (VEB = −6.0 Vdc) I

(BR)CEO
(BR)CBO
(BR)EBO

CBO
EBO

−12 − − Vdc

−15 − − Vdc

−6.0 − − Vdc

− − −0.1

− − −0.1

ON CHARACTERISTICS

DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) h
Collector−Emitter Saturation Voltage (Note 4) (IC = −200 mA, IB = −10 mA) V
Base−Emitter Saturation Voltage (Note 4) (IC = −150 mA, IB = −20 mA) V
Base−Emitter Turn−on Voltage (Note 4) (IC = −150 mA, VCE = −3.0 V) V
Input Capacitance (VEB = 0 V, f = 1.0 MHz) C
Output Capacitance (VCB = 0 V, f = 1.0 MHz) C
Turn−On Time (IBI = −50 mA, IC = −500 mA, RL = 3.0 W)
Turn−Off Time (I

= IB2 = −50 mA, IC = −500 mA, RL = 3.0 W)

B1

FE
CE(sat)
BE(sat)

BE(on)

ibo

obo

t

on

t

off

270 − 680

− − −250 mV

− −0.81 −0.90 V

− −0.81 −0.875 V

− 52 − pF

− 30 − pF

− 50 − ns

− 80 − ns

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

k W

mAdc
mAdc

300

250

200

150

100

, POWER DISSIPATION (mW)

50

D

P

0

−50 0 50 100 150

R

= 833°C/W

q

JA

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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