ON Semiconductor EMF18XV6T5, EMF18XV6T5G Service Manual

EMF18XV6T5

Dual Transistor ­Power Management

NPN/PNP Dual (Complementary)

Features

• Low V

CE(SAT)

, t0.5 V

• These are Pb−Free Devices

MAXIMUM RATINGS

Q1

Rating Symbol Value Unit

Collector-Base Voltage V

Collector-Emitter Voltage V

Collector Current I

Q2

Rating

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

CBO

CEO

C

Symbol Value Unit

CEO

CBO

EBO

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation TA = 25°C

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation TA = 25°C

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Junction and Storage

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad.

Symbol Max Unit

P

D

R

q

JA

Symbol Max Unit

P

D

R

q

JA

TJ, T

stg

50 Vdc

50 Vdc

100 mAdc

−60 V

−50 V

−6.0 V

−100 mAdc

357

(Note 1)

2.9

(Note 1)

350

(Note 1)

500

(Note1)

4.0

(Note 1)

250

(Note 1)

−55 to +150 °C

mW

mW/°C

°C/W

mW

mW/°C

°C/W

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(3)

R

Q

1

R

(4) (5) (6)

1

2

6

1

SOT−563

CASE 463A

PLASTIC

MARKING DIAGRAM

UV M G

G

1

UV = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

EMF18XV6T5 SOT−563

EMF18XV6T5G SOT−563

(Pb−Free)

(Pb−Free)

(1)(2)

Q

2

†

8000/Tape & Reel

8000/Tape & Reel

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 2

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications

1 Publication Order Number:

EMF18XV6/D

EMF18XV6T5

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C) (Note 2)

A

Symbol Min Typ Max Unit

Q1: NPN

Collector-Base Cutoff Current (V

= 50 V, IE = 0) I

CB

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I

Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) I

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V

V

(BR)CBO

(BR)CEO

DC Current Gain (VCE = 10 V, IC = 5.0 mA) h

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V

Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

CBO

CEO

EBO

FE

CE(sat)

V

OL

V

OH

− − 100 nAdc

− − 500 nAdc

− − 0.1 mAdc

50 − − Vdc

50 − − Vdc

80 140 −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc

Input Resistor R1 32.9 47 61.1

Resistor Ratio R1/R2 0.8 1.0 1.2

Q2: PNP

Collector−Base Breakdown Voltage (I

= −50 mAdc, IE = 0)

C

Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V

Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)

V

(BR)CBO

(BR)CEO

V

(BR)EBO

Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) I

Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) I

Collector−Emitter Saturation Voltage (Note 4)
(I

= −50 mAdc, IB = −5.0 mAdc)

C

V

DC Current Gain (Note 4) (VCE = −6.0 Vdc, IC = −1.0 mAdc) h

Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) f

Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) C

CBO

EBO

CE(sat)

FE

T

OB

−60 − − Vdc

−50 − − Vdc

−6.0 − − Vdc

− − −0.5 nA

− − −0.5

− − −0.5 Vdc

120 − 560 −

− 140 − MHz

− 3.5 − pF

3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

kW

mA

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2

EMF18XV6T5

)

TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN

10

IC/IB = 10

1

0.1

, MAXIMUM COLLECTOR VOLTAGE (VOLTS

0.01

CE(sat)

0

V

20 40

I

, COLLECTOR CURRENT (mA)

C

Figure 1. V

1

0.8

0.6

CE(sat)

TA=-25°C

versus I

C

f = 1 MHz
I

= 0 V

E

= 25°C

T

A

25°C

75°C

50

1000

100

, DC CURRENT GAIN (NORMALIZED)

FE

10

1 100

, COLLECTOR CURRENT (mA)

I

C

10

VCE = 10 V

TA=75°C

Figure 2. DC Current Gain

100

75°C

10

1

25°C

TA=-25°C

25°C

-25°C

0.4

, CAPACITANCE (pF)

ob

C

0.2

0

010203040

, REVERSE BIAS VOLTAGE (VOLTS)

V

R

Figure 3. Output Capacitance

100

VO = 0.2 V

10

1

, INPUT VOLTAGE (VOLTS)

in

V

0.1
010 203040 50

Figure 5. Input Voltage versus Output Current

0.1

0.01

, COLLECTOR CURRENT (mA) h

C

I

50

, COLLECTOR CURRENT (mA)

I

C

0.001

TA=-25°C

VO = 5 V

0246810

V

, INPUT VOLTAGE (VOLTS)

in

Figure 4. Output Current versus Input Voltage

25°C

75°C

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3

120

TA = 25°C

EMF18XV6T5

TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP

1000

TA = 75°C

VCE = 10 V

TA = 25°C

90

60

, COLLECTOR CURRENT (mA)

30

C

I

0

2

1.5

1

0.5

, COLLECTOR‐EMITTER VOLTAGE (V)

CE

V

0

0.01

300 mA

250
200

150

100

IB = 50 mA

0

36 9 15

VCE, COLLECTOR VOLTAGE (V)

Figure 6. IC − V

0.1 1 10 100

IB, BASE CURRENT (mA)

CE

12

TA = 25°C

100

DC CURRENT GAIN

10

900

800

700

600

500

400

300

COLLECTOR VOLTAGE (mV)

200

100

0

0.2

0.1

0.5 1 5 10 20 40 60 80 100 150 200

TA = - 25°C

1 10 100

IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

TA = 25°C
V

= 5 V

CE

13

12

11

10

9

8

, INPUT CAPACITANCE (pF)

ib

C

7

6

0

Figure 8. Collector Saturation Region

123 4140

VEB (V)

Figure 10. Capacitance

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4

12

10

8

6

, CAPACITANCE (pF)

ob

4

C

2

0

Figure 9. On Voltage

10 20 30 40

VCB (V)

Figure 11. Capacitance

EMF18XV6T5

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

D

−X−

6

12 3

e

45

b

0.08 (0.003) X

E

−Y−

6 5 PL

NOTES:

A

L

H

E

C

M

Y

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60
b 0.17 0.22 0.27
C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70
E 1.10 1.20 1.30
e 0.5 BSC
L 0.10 0.20 0.30

H

1.50 1.60 1.70

E

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

SOLDERING FOOTPRINT*

0.3

0.0118

0.45

0.0177

1.0

1.35

0.0531

0.0394

0.5

0.5

0.0197

0.0197

mm

ǒ

SCALE 20:1

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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EMF18XV6/D

5