ON Semiconductor EMF18XV6T5, EMF18XV6T5G Service Manual
EMF18XV6T5
Dual Transistor Power Management
NPN/PNP Dual (Complementary)
Features
• Low V
CE(SAT)
, t0.5 V
• These are Pb−Free Devices
MAXIMUM RATINGS
Q1
Rating Symbol Value Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
Q2
Rating
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
CBO
CEO
C
Symbol Value Unit
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
Symbol Max Unit
P
D
R
q
JA
Symbol Max Unit
P
D
R
q
JA
TJ, T
stg
50 Vdc
50 Vdc
100 mAdc
−60 V
−50 V
−6.0 V
−100 mAdc
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
500
(Note1)
4.0
(Note 1)
250
(Note 1)
−55 to +150 °C
mW
mW/°C
°C/W
mW
mW/°C
°C/W
http://onsemi.com
(3)
R
Q
1
R
(4) (5) (6)
1
2
6
1
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
UV M G
G
1
UV = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
EMF18XV6T5 SOT−563
EMF18XV6T5G SOT−563
(Pb−Free)
(Pb−Free)
(1)(2)
Q
2
†
8000/Tape & Reel
8000/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
1 Publication Order Number:
EMF18XV6/D
EMF18XV6T5
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C) (Note 2)
A
Symbol Min Typ Max Unit
Q1: NPN
Collector-Base Cutoff Current (V
= 50 V, IE = 0) I
CB
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) I
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V
V
(BR)CBO
(BR)CEO
DC Current Gain (VCE = 10 V, IC = 5.0 mA) h
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
CBO
CEO
EBO
FE
CE(sat)
V
OL
V
OH
− − 100 nAdc
− − 500 nAdc
− − 0.1 mAdc
50 − − Vdc
50 − − Vdc
80 140 −
− − 0.25 Vdc
− − 0.2 Vdc
4.9 − − Vdc
Input Resistor R1 32.9 47 61.1
Resistor Ratio R1/R2 0.8 1.0 1.2
Q2: PNP
Collector−Base Breakdown Voltage (I
= −50 mAdc, IE = 0)
C
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V
(BR)CBO
(BR)CEO
V
(BR)EBO
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) I
Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) I
Collector−Emitter Saturation Voltage (Note 4)
(I
= −50 mAdc, IB = −5.0 mAdc)
C
V
DC Current Gain (Note 4) (VCE = −6.0 Vdc, IC = −1.0 mAdc) h
Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) f
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) C
CBO
EBO
CE(sat)
FE
T
OB
−60 − − Vdc
−50 − − Vdc
−6.0 − − Vdc
− − −0.5 nA
− − −0.5
− − −0.5 Vdc
120 − 560 −
− 140 − MHz
− 3.5 − pF
3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
kW
mA
http://onsemi.com
2
Loading...