ON Semiconductor EMD5DXV6-D, EMD5DXV6T5 Service Manual

EMD5DXV6T1, EMD5DXV6T5

Preferred Devices

Product Preview

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD5DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch Tape and Reel

• Lead Free Solder Plating

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(1)(2)(3)

R

1

R

Q

1

R

2

(4) (5) (6)

4

5

6

SOT−563

CASE 463A

PLASTIC

MARKING DIAGRAM

2

Q

R

1

3

2

1

2

This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.

U5 D

U5 = Specific Device Code D = Date Code

ORDERING INFORMATION

Device Package Shipping

EMD5DXV6T1 SOT−563 4 mm pitch

4000/Tape & Reel

EMD5DXV6T5 SOT−563 2 mm pitch

8000/Tape & Reel

Preferred devices are recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2003

July, 2003 − Rev. P1

1 Publication Order Number:

EMD5DXV6/D

EMD5DXV6T1, EMD5DXV6T5

MAXIMUM RATINGS (T

= 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)

A

Rating

Symbol Value Unit

Collector-Base Voltage V Collector-Emitter Voltage V Collector Current I

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation TA = 25°C Derate above 25°C

Thermal Resistance Junction-to-Ambient R

Characteristic

(Both Junctions Heated)

Total Device Dissipation TA = 25°C Derate above 25°C

Thermal Resistance Junction-to-Ambient R

Junction and Storage Temperature TJ, T

1. FR−4 @ Minimum Pad

Symbol Max Unit

CBO CEO

C

P

D



JA

P

D



JA

stg

50 Vdc 50 Vdc

100 mAdc

357

(Note 1)

2.9

(Note 1)

350

(Note 1)

500

(Note 1)

4.0

(Note 1)

250

(Note 1)

−55 to +150

mW

mW/°C

°C/W

mW

mW/°C

°C/W

°C

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EMD5DXV6T1, EMD5DXV6T5

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

Q1 TRANSISTOR: PNP OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) I Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) I

CBO CEO EBO

− − 100 nAdc

− − 500 nAdc

− − 1.0 mAdc

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V DC Current Gain (VCE = 10 V, IC = 5.0 mA) h Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V Output Voltage (on) (VCC = 5.0 V, V Output Voltage (off) (VCC = 5.0 V, V

= 2.5 V, RL = 1.0 k) V

B

= 0.5 V, RL = 1.0 k) V

B

(BR)CBO (BR)CEO

FE

CE(SAT)

OL OH

Input Resistor R1 3.3 4.7 6.1 k Resistor Ratio R1/R2 0.38 0.47 0.56

50 − − Vdc 50 − − Vdc 20 35 −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc

Q2 TRANSISTOR: NPN OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) I Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) I

CBO CEO EBO

− − 100 nAdc

− − 500 nAdc

− − 0.1 mAdc

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V DC Current Gain (VCE = 10 V, IC = 5.0 mA) h Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V Output Voltage (on) (VCC = 5.0 V, V Output Voltage (off) (VCC = 5.0 V, V

= 2.5 V, RL = 1.0 k) V

B

= 0.5 V, RL = 1.0 k) V

B

(BR)CBO (BR)CEO

FE

CE(SAT)

OL OH

Input Resistor R1 33 47 61 k Resistor Ratio R1/R2 0.8 1.0 1.2

50 − − Vdc 50 − − Vdc 80 140 −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc

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