ON Semiconductor EMD4DXV6-D, EMD4DXV6T5 Service Manual

EMD4DXV6T1,

s

l

l

EMD4DXV6T5

Preferred Devices

Dual Bias Resistor
Transistors

NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network

The BR T (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD4DXV6T1 series,
two complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.

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(1)(2)(3)

R

1

R

Q

1

R

2

(4) (5) (6)

2

Q

R

1

2

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• These are Pb−Free Devices

MAXIMUM RATINGS (T

and Q2, − minus sign for Q1 (PNP) omitted)

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

TA = 25°C (Note 1)
Derate above 25°C (Note 1)

Thermal Resistance,

Junction-to-Ambient (Note 1)

Total Device Dissipation

TA = 25°C (Note 1)
Derate above 25°C

Thermal Resistance,

Junction-to-Ambient (Note 1)

Junction and Storage Temperature TJ, T

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. FR−4 board with minimum mounting pad.

= 25°C unless otherwise noted, common for Q

A

CBO
CEO

C

Symbol Max Unit

P

D

R

q

JA

P

D

R

q

JA

stg

50 Vdc
50 Vdc

100 mAdc

357

2.9

350 °C/W

500

4.0

250 °C/W

− 55 to +150 °C

mW/°C

mW/°C

1

mW

mW

6

1

SOT−563

CASE 463A

STYLE 1

MARKING DIAGRAM

U7 M G

G

1

U7 = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

EMD4DXV6T1G SOT−563

(Pb−Free)

EMD4DXV6T5G SOT−563

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

4000/Tape & Ree

8000/Tape & Ree

†

© Semiconductor Components Industries, LLC, 2005

October, 2005− Rev. 1

1 Publication Order Number:

EMD4DXV6/D

EMD4DXV6T1, EMD4DXV6T5

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

Q1 TRANSISTOR: PNP

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) I
Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) I

CBO
CEO
EBO

− − 100 nAdc

− − 500 nAdc

− − 0.2 mAdc

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V

V

(BR)CBO
(BR)CEO

DC Current Gain (VCE = 10 V, IC = 5.0 mA) h
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on) (VCC = 5.0 V, V
Output Voltage (off) (VCC = 5.0 V, V

= 2.5 V, RL = 1.0 kW)

B

= 0.5 V, RL = 1.0 kW)

B

CE(SAT)

FE

V

OL

V

OH

50 − − Vdc
50 − − Vdc
80 140 −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc
Input Resistor R1 7.0 10 13
Resistor Ratio R1/R2 0.17 0.21 0.25

Q2 TRANSISTOR: NPN

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) I
Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) I

CBO
CEO
EBO

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V
DC Current Gain (VCE = 10 V, IC = 5.0 mA) h
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on) (VCC = 5.0 V, V
Output Voltage (off) (VCC = 5.0 V, V

= 3.5 V, RL = 1.0 kW)

B

= 0.5 V, RL = 1.0 kW)

B

V

(BR)CBO
(BR)CEO

CE(SAT)

V
V

FE

OL
OH

Input Resistor R1 32.9 47 61.1
Resistor Ratio R1/R2 0.8 1.0 1.2

− − 100 nAdc

− − 500 nAdc

− − 0.1 mAdc

50 − − Vdc
50 − − Vdc
80 140 −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc

kW

kW

250

200

150

100

R

= 833°C/W

q

50

, POWER DISSIPATION (MILLIWATTS)

D

P

0

−50 0 50 100 150

JA

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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