ON Semiconductor EMC2DXV5T1-D, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Service Manual

EMC2DXV5T1,
EMC3DXV5T1,
EMC4DXV5T1,
EMC5DXV5T1

Preferred Devices

Dual Common
Base−Collector Bias
Resistor Transistors

NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network

The BR T (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.

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312

R1

Q1

45

5

CASE 463B

R2

R1

SOT−553

R2

Q2

1

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• These are Pb−Free Devices

MAXIMUM RATINGS (T

and Q2, − minus sign for Q1 (PNP) omitted)

Rating Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

= 25°C unless otherwise noted, common for Q

A

CBO
CEO

C

50 Vdc
50 Vdc

100 mAdc

1

MARKING DIAGRAM

Ux M G

G

Ux = Specific Device Code

x = C, 3, E, or 5
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

© Semiconductor Components Industries, LLC, 2007

April, 2007 − Rev. 5

1 Publication Order Number:

EMC2DXV5T1/D

EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

ONE JUNCTION HEATED

Total Device Dissipation

TA = 25°C
Derate above 25°C

Thermal Resistance, Junction-to-Ambient

BOTH JUNCTIONS HEATED

Total Device Dissipation

TA = 25°C

Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature TJ, T

1. FR−4 @ Minimum Pad

DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES

Transistor 1 − PNP Transistor 2 − NPN

Device Marking R1 (K) R2 (K) R1 (K) R2 (K) Package Shipping

EMC2DXV5T1
EMC2DXV5T1G SOT−553*
EMC2DXV5T5 SOT−553*
EMC2DXV5T5G SOT−553*
EMC3DXV5T1
EMC3DXV5T1G SOT−553*
EMC3DXV5T5 SOT−553*
EMC3DXV5T5G SOT−553*
EMC4DXV5T1
EMC4DXV5T1G SOT−553*
EMC4DXV5T5 SOT−553*
EMC4DXV5T5G SOT−553*
EMC5DXV5T1
EMC5DXV5T1G SOT−553*
EMC5DXV5T5 SOT−553*
EMC5DXV5T5G SOT−553*

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

UC 22 22 22 22

U3 10 10 10 10

UE 10 47 47 47

U5 4.7 10 47 47

P

R

P

R

D

q

JA

D

q

JA

stg

SOT−553*

SOT−553*

SOT−553*

SOT−553*

357 (Note 1)

2.9 (Note 1)

mW

mW/°C

350 (Note 1) °C/W

500 (Note 1)

4.0 (Note 1)

mW

mW/°C

250 (Note 1) °C/W

− 55 to +150 °C

†

4000 / Tape & Reel

8000 / Tape & Reel

4000 / Tape & Reel

8000 / Tape & Reel

4000 / Tape & Reel

8000 / Tape & Reel

4000 / Tape & Reel

8000 / Tape & Reel

250

200

150

100

R

= 833°C/W

q

50

, POWER DISSIPATION (MILLIWATTS)

D

P

0

−50 0 50 100 150

JA

TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

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EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS

Collector-Base Cutoff Current (V

= 50 V, IE = 0) I

CB

Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) I
Emitter-Base Cutoff Current EMC2DXV5T1

(VEB = 6.0, IC = 5.0 mA) EMC3DXV5T1

EMC4DXV5T1
EMC5DXV5T1

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V
DC Current Gain EMC2DXV5T1

(VCE = 10 V, IC = 5.0 mA) EMC3DXV5T1

EMC4DXV5T1

EMC5DXV5T1
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on) (VCC = 5.0 V, V
Output Voltage (off) (VCC = 5.0 V, V

= 2.5 V, RL = 1.0 kW)

B

= 0.5 V, RL = 1.0 kW)

B

Input Resistor EMC2DXV5T1

EMC3DXV5T1, EMC4DXV5T1

EMC5DXV5T1
Resistor Ratio EMC2DXV5T1

EMC3DXV5T1

EMC4DXV5T1

EMC5DXV5T1

Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0) I
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) I
Emitter-Base Cutoff Current EMC2DXV5T1

(VEB = 6.0, IC = 5.0 mA) EMC3DXV5T1

EMC4DXV5T1, EMC5DXV5T1

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V
DC Current Gain EMC2DXV5T1

(VCE = 10 V, IC = 5.0 mA) EMC3DXV5T1

EMC4DXV5T1, EMC5DXV5T1
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V
Output Voltage (on) (VCC = 5.0 V, V
Output Voltage (off) (VCC = 5.0 V, V

= 2.5 V, RL = 1.0 kW)

B

= 0.5 V, RL = 1.0 kW)

B

Input Resistor EMC2DXV5T1

EMC3DXV5T1

EMC4DXV5T1, EMC5DXV5T1
Resistor Ratio EMC2DXV5T1

EMC3DXV5T1

EMC4DXV5T1, EMC5DXV5T1

CBO
CEO

I

EBO

V

(BR)CBO
(BR)CEO

h

FE

CE(SAT)

V

OL

V

OH

R1 15.4

R1/R2 0.8

CBO
CEO

I

EBO

V

(BR)CBO
(BR)CEO

h

FE

CE(SAT)

V

OL

V

OH

R1 15.4

R1/R2 0.8

− − 100 nAdc

− − 500 nAdc

−

−

−

−

−

−

−

−

0.2

0.5

0.2

1.0

mAdc

50 − − Vdc
50 − − Vdc
60

35
80
20

100

60

140

35

−

−

−

−

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc

7.0

3.3

0.8

0.17

0.38

22
10

4.7

1.0

1.0

0.21

0.47

28.6
13

6.1

1.2

1.2

0.25

0.56

− − 100 nAdc

− − 500 nAdc

−

−

−

−

−

−

0.2

0.5

0.1

mAdc

50 − − Vdc
50 − − Vdc
60

35
80

100

60

140

−

−

−

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc

7.0
33

0.8

0.8

22
10
47

1.0

1.0

1.0

28.6
13
61

1.2

1.2

1.2

kW

kW

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EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR

10

IC/IB = 10

1

TA=−25°C

0.1

0.01

, COLLECTOR EMITTER SATURATION VOLTAGE (V)

0 20 50

CE(sat)

V

4

3

2

IC, COLLECTOR CURRENT (mA)

Figure 2. V

CE(sat)

versus I

C

25°C

75°C

40

f = 1 MHz
lE = 0 mA
TA = 25°C

1000

100

, DC CURRENT GAIN

FE

10

100

VCE = 10 V

TA=75°C

25°C

−25°C

1

IC, COLLECTOR CURRENT (mA)

10

100

Figure 3. DC Current Gain

25°C

75°C

10

1

TA=−25°C

, CAPACITANCE (pF)

ob

C

0.1

1

0

VR, REVERSE BIAS VOLTAGE (V)

Figure 4. Output Capacitance

, INPUT VOLTAGE (VOLTS)

in

V

100

10

0.1

VO = 0.2 V

TA=−25°C

1

0 10 20 30

IC, COLLECTOR CURRENT (mA)

50010 203040

75°C

, COLLECTOR CURRENT (mA) h

C

I

0.01

0.001

0 1 2 3 4

Vin, INPUT VOLTAGE (V)

5 6 7 8 9 10

Figure 5. Output Current versus Input Voltage

25°C

40 50

VO = 5 V

Figure 6. Input Voltage versus Output Current

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