ON Semiconductor DTC144ERLRP, DTC144ERLRM, DTC144ERLRA, DTC144EET1, DTC144E Datasheet

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 0

1 Publication Order Number:

DTC114EET1/D

DTC114EET1 SERIES

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–75/SOT–416 package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC–75/SOT–416 package can be soldered using

wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

• Available in 8 mm, 7 inch/3000 Unit Tape & Reel

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Collector-Base Voltage V

CBO

50 Vdc

Collector-Emitter Voltage V

CEO

50 Vdc

Collector Current I

C

100 mAdc

DEVICE MARKING AND RESISTOR VALUES

Device Marking R1 (K) R2 (K) Shipping

DTC114EET1 DTC124EET1 DTC144EET1

DTC114YET1

DTC143TET1 DTC123EET1 DTC143EET1

DTC143ZET1 DTC124XET1

DTC123JET1

8A 8B 8C 8D 8F 8H 8J 8K 8L 8M

10 22 47 10

4.7

2.2

4.7

4.7 22

2.2

10 22 47 47

∞

2.2

4.7 47 47 47

3000/Tape & Reel

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CASE 463

SOT–416/SC–75

STYLE 1

NPN SILICON

BIAS RESISTOR

TRANSISTORS

3

2

1

COLLECTOR

3

1

BASE

2

EMITTER

DTC114EET1 SERIES

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2

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation,

FR–4 Board

(1.)

@ TA = 25°C

Derate above 25°C

P

D

200

1.6

mW

mW/°C

Thermal Resistance, Junction to Ambient

(1.)

R

θ

JA

600 °C/W

Total Device Dissipation,

FR–4 Board

(2.)

@ TA = 25°C

Derate above 25°C

P

D

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient

(2.)

R

θ

JA

400 °C/W

Junction and Storage Temperature Range TJ, T

stg

–55 to +150 °C

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Base Cutoff Current (VCB = 50 V, IE = 0) I

CBO

— — 100 nAdc

Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) I

CEO

— — 500 nAdc

Emitter–Base Cutoff Current DTC114EET1

(V

EB

= 6.0 V, IC = 0) DTC124EET1

DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1

I

EBO

— — — — — — — — — —

0.5

0.2

0.1

0.2

1.9

2.3

1.5

0.18

0.13

0.2

mAdc

Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V

(BR)CBO

50 — — Vdc

Collector–Emitter Breakdown Voltage

(3.)

(IC = 2.0 mA, IB = 0) V

(BR)CEO

50 — — Vdc

ON CHARACTERISTICS

(3.)

DC Current Gain DTC114EET1

(V

CE

= 10 V, IC = 5.0 mA) DTC124EET1

DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1

h

FE

35 60 80 80

160

8.0 15 80 80 80

60 100 140 140 350

15

30 200 150 140

— — — — — — — — — —

Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(I

C

= 10 mA, IB = 5 mA) DTC123EET1

(I

C

= 10 mA, IB = 1 mA) DTC143TET1

DTC143ZET1/DTC124XET1

V

CE(sat)

— — 0.25 Vdc

Output Voltage (on)

(V

CC

= 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTC114EET1

DTC124EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1

(V

CC

= 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) DTC144EET1

V

OL

— — — — — — — — — —

—

0.2

Vdc

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 × 1.0 Inch Pad

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

DTC114EET1 SERIES

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3

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Typ Max Unit

Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)

(V

CC

= 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTC143TET1

DTC143ZET1

V

OH

4.9 — — Vdc

Input Resistor DTC114EET1

DTC124EET1 DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1

R1 7.0

15.4

32.9

7.0

3.3

1.5

3.3

15.4

1.54

10 22 47 10

4.7

2.2

4.7

4.7 22

2.2

13

28.6

61.1 13

6.1

2.9

6.1

28.6

2.86

kΩ

Resistor Ratio DTC114EET1/DTC124EET1/DTC144EET1

DTC114YET1 DTC143TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1

R1/R

2

0.8

0.17 —

0.8

0.055

0.38

0.038

1.0

0.21 —

1.0

0.1

0.47

0.047

1.2

0.25 —

1.2

0.185

0.56

0.056

Figure 1. Derating Curve

250

200

150

100

50

0

–50 0 50 100 150

T

A

, AMBIENT TEMPERATURE (°C)

P

D

, POWER DISSIPATION (MILLIWATTS)

R

θ

JA

= 600°C/W

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

0.001

0.01

0.1

1.0

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 2. Normalized Thermal Response

DTC114EET1 SERIES

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4

TYPICAL ELECTRICAL CHARACTERISTICS — DTC114EET1

V

in

, INPUT VOLTAGE (VOLTS)

I

C

, COLLECTOR CURRENT (mA) h

FE

, DC CURRENT GAIN (NORMALIZED)

Figure 3. V

CE(sat)

versus I

C

1002030

I

C

, COLLECTOR CURRENT (mA)

10

1

0.1

TA= –25°C

75°C

25°C

40

50

Figure 4. DC Current Gain

Figure 5. Output Capacitance

1

0.1

0.01

0.001 020 40

50

IC, COLLECTOR CURRENT (mA)

V

CE(sat)

,

MA

X

IM

U

M

COLLECTOR

VOLTA

G

E

(

VOLTS)

1000

100

10

1 10 100

I

C

, COLLECTOR CURRENT (mA)

TA=75°C

25°C

–25°C

TA= –25°C

25°C

Figure 6. Output Current versus Input Voltage

75°C

25°C

TA= –25°C

100

10

1

0.1

0.01

0.001 01234

V

in

, INPUT VOLTAGE (VOLTS)

5678910

Figure 7. Input Voltage versus Output Current

50

010203040

4

3

1

2

0

V

R

, REVERSE BIAS VOLTAGE (VOLTS)

C

ob

,

CA

P

ACITA

N

CE

(p

F)

75°C

VCE = 10 V

f = 1 MHz I

E

= 0 V

T

A

= 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10