ON Semiconductor DTC124ERLRP, DTC124ERLRM, DTC124ERLRA, DTC143ZRLRP, DTC143ZRLRM Datasheet

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 0

1 Publication Order Number:

DTC114E/D

DTC114E SERIES

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications.

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Base Voltage V

CBO

50 Vdc

Collector-Emitter Voltage V

CEO

50 Vdc

Collector Current I

C

100 mAdc

Total Power Dissipation

@ T

A

= 25°C

(1.)

Derate above 25°C

P

D

350

2.81

mW

mW/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to

Ambient (surface mounted)

R

θ

JA

357 °C/W

Operating and Storage

T emperature Range

TJ, T

stg

–55 to

+150

°C

Maximum Temperature for

Soldering Purposes, Time in Solder Bath

T

L

260

10

°C

Sec

DEVICE MARKING AND RESISTOR VALUES

Device Marking R1 (K) R2 (K) Shipping

DTC114E DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z

10 22 47 10 10

4.7

1.0

2.2

4.7

10 22 47 47

∞ ∞

1.0

2.2

4.7 47

5000/Box

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.

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CASE 29

TO–92 (TO–226)

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

NPN SILICON

BIAS RESISTOR

TRANSISTOR

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER

DTC114E SERIES

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2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Base Cutoff Current (VCB = 50 V, IE = 0) I

CBO

— — 100 nAdc

Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) I

CEO

— — 500 nAdc

Emitter–Base Cutoff Current DTC114E

(V

EB

= 6.0 V, IC = 0) DTC124E

DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z

I

EBO

— — — — — — — — — —

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

mAdc

Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V

(BR)CBO

50 — — Vdc

Collector–Emitter Breakdown Voltage

(2.)

(IC = 2.0 mA, IB = 0) V

(BR)CEO

50 — — Vdc

ON CHARACTERISTICS

(2.)

DC Current Gain DTC114E

(V

CE

= 10 V, IC = 5.0 mA) DTC124E

DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z

h

FE

35 60 80

80 160 160

3.0

8.0 15 80

60 100 140 140 350 350

5.0 15 30

200

— — — — — — — — — —

Collector–Emitter Saturation Voltage

(I

C

= 10 mA, IE = 0.3 mA) DTC144E/DTC114Y

(I

C

= 10 mA, IB = 0.3 mA) DTD113E/DTC143E

(I

C

= 10 mA, IB = 5 mA) DTC123E

(I

C

= 10 mA, IB = 1 mA) DTC114T/DTC143T/

(I

C

= 10 mA, IB = 1 mA) DTC143Z/DTC124E

V

CE(sat)

— — 0.25 Vdc

Output Voltage (on)

(V

CC

= 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTC114E

DTC124E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z

(V

CC

= 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) DTC144E

V

OL

— — — — — — — — — —

0.2

Vdc

2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

DTC114E SERIES

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3

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Typ Max Unit

Output Voltage (of f)

(V

CC

= 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) DTC114E

DTC124E DTC144E DTC114Y DTC123E DTC143E

(V

CC

= 5.0 V, VB = 0.05 V, RL = 1.0 kΩ) DTD113E

(V

CC

= 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTC114T

DTC143T DTC143Z

V

OH

4.9 — — Vdc

Input Resistor DTC114E

DTC124E DTC144E DTC114Y DTC114T DTC143T DTD113E DTC123E DTC143E DTC143Z

R1 7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

10 22 47 10 10

4.7

1.0

2.2

4.7

13

28.6

61.1 13 13

6.1

1.3

2.9

6.1

kΩ

Resistor Ratio DTC114E/DTC124E/DTC144E

DTC114Y DTC114T/DTC143T DTD113E/DTC123E/DTC143E DTC143Z

R1/R

2

0.8

0.17 —

0.8

0.055

1.0

0.21 —

1.0

0.1

1.2

0.25 —

1.2

0.185

DTC114E SERIES

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4

TYPICAL ELECTRICAL CHARACTERISTICS

DTC114E

1002030

IC, COLLECTOR CURRENT (mA)

10

1

0.1

V

in

, INPUT VOLTAGE (VOLTS)

TA= –25°C

75°C

25°C

40

50

1

0.1

0.01

0.001 020 406080

I

C

, COLLECTOR CURRENT (mA)

V

CE(sat)

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

1000

100

10

1 10 100

I

C

, COLLECTOR CURRENT (mA)

h

FE

,

D

C

U

RRE

N

T

G

AI

N (N

ORMALI

Z

E

D)

TA=75°C

25°C

–25°C

TA= –25°C

25°C

IC/IB = 10

75°C

25°C

TA= –25°C

100

10

1

0.1

0.01

0.001 01234

V

in

, INPUT VOLTAGE (VOLTS)

I

C

,

COLLECTOR

C

U

RRE

N

T

(m

A

)

5678910

50

010203040

4

3

1

2

0

V

R

, REVERSE BIAS VOLTAGE (VOLTS)

C

ob

, CAPACITANCE (pF)

75°C

f = 1 MHz l

E

= 0 V

T

A

= 25°C

VO = 5 V

VCE = 10 V

V

O

= 0.2 V

Figure 1. Derating Curve

250

200

150

100

50

0

–50 0 50 100 150

T

A

, AMBIENT TEMPERATURE (°C)

P

D

,

P

O

W

ER

D

ISSI

P

ATIO

N (

MILLI

W

ATTS

)

R

θ

JA

= 625°C/W

Figure 2. V

CE(sat)

versus I

C

Figure 3. DC Current Gain

Figure 4. Output Capacitance

Figure 5. V

CE(sat)

versus I

C

Figure 6. V

CE(sat

)

versus I

C