ON Semiconductor BF493SZL1, BF493SRL1, BF493S Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–350 Vdc
Collector–Base Voltage V
CBO
–350 Vdc
Emitter–Base Voltage V
EBO
–6.0 Vdc
Collector Current — Continuous I
C
–500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
T emperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = –1.0 mAdc, IB = 0)
V
(BR)CEO
–350 — Vdc
Collector–Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V
(BR)CBO
–350 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V
(BR)EBO
–6.0 — Vdc
Collector Cutoff Current
(VCE = –250 Vdc)
I
CES
— –10 nAdc
Emitter Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
I
EBO
— 0.1
m
Adc
Collector Cutoff Current
(VCB = –250 Vdc, IE = 0, TA = 25°C)
(VCB = –250 Vdc, IE = 0, TA = 100°C)
I
CBO
—
—
–0.005
–1.0
m
Adc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Order this document
by BF493S/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
BF493S
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
h
FE
25
40
—
—
—
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
V
CE(sat)
— –2.0 Vdc
Base–Emitter On Voltage
(IC = –20 mA, IB = –2.0 mA)
V
BE(sat)
— –2.0 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
f
T
50 — MHz
Common–Emitter Feedback Capacitance
(VCB = –100 Vdc, IE = 0, f = 1.0 MHz)
C
re
— 1.6 pF
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