ON Semiconductor BC818-40LT-D Service Manual
BC818-40LT1G
General Purpose
Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector −Emitter Voltage V
Collector −Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
P
D
R
q
JA
P
D
R
q
JA
stg
25 V
30 V
5.0 V
500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
6G M G
G
1
6G = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
ORDERING INFORMATION
Device Package Shipping
BC818−40LT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
3000 / Tape & Reel
BC818−40LT/D
†
BC818−40LT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter−Base Breakdown Voltage
(IE = −1.0 mA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(on)
f
C
obo
FE
T
25 − − V
30 − − V
5.0 − − V
−
−
250
40
−
−
−
−
100
5.0
600
−
nA
mA
− − 0.7 V
− − 1.2 V
100 − − MHz
− 10 − pF
−
1000
100
, DC CURRENT GAIN
FE
h
10
VCE = 1 V
T
= 25°C
J
1.0
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
10000.1 10 100
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2
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