ON Semiconductor BAV199LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV199LT1/D
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAV199LT1 to order the 7 inch/3,000 unit reel
Use BAV199LT3 to order the 13 inch/10,000 unit reel
ANODE
1
3
CATHODE/ANODE
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
Repetitive Peak Reverse Voltage V
Average Rectified Forward Current
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current t = 1.0 µs
THERMAL CHARACTERISTICS
Total Device Dissipation FR–5 Board
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
DEVICE MARKING
BAV199LT1 = JY
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
(1)
(averaged over any 20 ms period) I
t = 1.0 ms
t = 1.0 A
Characteristic Symbol Max Unit
(1)
TA = 25°C
CATHODE
2
R
F
FM(surge)
RRM
F(AV)
FRM
I
FSM
P
D
R
q
JA
P
D
R
q
JA
stg
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
70 Vdc
215 mAdc
500 mAdc
70 Vdc
715 mAdc
450 mAdc
2.0
1.0
0.5
225
1.8
556 °C/W
300
2.4
417 °C/W
–65 to +150 °C
Adc
mW
mW/°C
mW
mW/°C
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BAV199LT1
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
= 100 µAdc)
(BR)
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
(TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol Min Max Unit
V
(BR)
I
R
C
D
V
F
t
rr
70 — Vdc
—
—
— 2.0 pF
—
—
—
—
— 3.0 µs
5.0
80
900
1000
1100
1250
nAdc
mVdc
+10 V
50
GENERATOR
820
Ω
OUTPUT
PULSE
Ω
0.1 µF
2.0 k
100
t
t
r
0.1
µ
I
F
µ
H
DUT
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
F
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
rr
V
R
R(peak)
p
10%
90%
INPUT SIGNAL
is equal to 10 mA.
t
Figure 1. Recovery Time Equivalent Test Circuit
I
F
t
rr
I
R
(IF = IR = 10 mA; MEASURED
i
OUTPUT PULSE
at i
R(REC)
R(REC)
= 1.0 mA)
t
= 1.0 mA
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Loading...