
BAT54XV2T1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
• Pb−Free Package is Available
= 10 mA
F
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30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (T
Rating
Reverse Voltage V
= 125°C unless otherwise noted)
J
Symbol Value Unit
R
30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
Thermal Resistance,
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad.
= 25°C
A
Derate above 25°C
Junction−to−Ambient
P
D
R
JA
stg
200
1.57
635 °C/W
−55 to 125 °C
mW
mW/°C
1
CATHODE
2
1
2
ANODE
SOD−523
CASE 502
PLASTIC
MARKING DIAGRAM
JVM G
1
JV = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
G
ORDERING INFORMATION
Device Package Shipping
BAT54XV2T1 SOD−523 3000 / Tape & Reel
BAT54XV2T1G SOD−523
(Pb−Free)
BAT54XV2T5G SOD−523
(Pb−Free)
3000 / Tape & Reel
8000 / Tape & Reel
†
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 5
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BAT54XV2T1/D

BAT54XV2T1
ELECTRICAL CHARACTERISTICS (T
Characteristic
Reverse Breakdown Voltage
= 10 A)
(I
R
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
V
Total Capacitance
(V
= 1.0 V, f = 1.0 MHz)
R
Reverse Leakage
(V
= 25 V)
R
Forward Voltage
(I
= 0.1 mA)
F
Forward Voltage
(I
= 1.0 mA)
F
Forward Voltage
(I
= 10 mA)
F
Forward Voltage
(I
= 30 mA)
F
Forward Voltage
(IF = 100 mA)
Reverse Recovery Time
(I
= IR = 10 mA, I
F
= 1.0 mA) Figure 1
R(REC)
Forward Current (DC) I
Repetitive Peak Forward Current I
Non−Repetitive Peak Forward Current
(t < 1.0 s)
(BR)R
C
I
R
V
V
V
V
V
t
rr
F
FRM
I
FSM
30 − − V
T
F
F
F
F
F
− 7.6 10 pF
− 0.5 2.0
A
− 0.22 0.24 V
− 0.29 0.32 V
− 0.35 0.40 V
− 0.41 0.5 V
− 0.52 0.8 V
− − 5.0 ns
− − 200 mA
− − 300 mA
− − 600 mA
+10 V
50 Output
Generator
820
Pulse
2 k
0.1 F
100 H
I
0.1 F
F
t
t
p
r
10%
t
I
F
DUT
50 Input
Sampling
Oscilloscope
V
R
90%
INPUT SIGNAL
I
R
(I
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. t
» t
p
rr
is equal to 10 mA.
R(peak)
Figure 1. Recovery Time Equivalent Test Circuit
t
rr
= 1 mA
i
R(REC)
OUTPUT PULSE
= IR = 10 mA; measured
F
at i
R(REC)
= 1 mA)
t
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2

BAT54XV2T1
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.0 0.1
150°C
125°C
85°C
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
25°C
0.2 0.3 0.4
−40°C
−55°C
14
12
10
8
0.5
0.6
1000
TA = 150°C
100
10
1.0
0.1
, REVERSE CURRENT (A)
R
I
0.01
0
5101520
, REVERSE VOLTAGE (VOLTS)
V
R
TA = 125°C
TA = 85°C
TA = 25°C
25
30
Figure 3. Leakage Current
6
4
, TOTAL CAPACITANCE (pF)
T
2
C
0
0
51015 30
V
, REVERSE VOLTAGE (VOLTS)
R
2520
Figure 4. Total Capacitance
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3

BAT54XV2T1
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE D
12
2X
b
0.08 (0.003) X Y
c
−X−
D
−Y−
E
M
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
DIM MIN NOM MAX
H 1.50 1.60 1.70
MILLIMETERS
A 0.50 0.60 0.70
b 0.25 0.30 0.35
c 0.07 0.14 0.20
D 1.10 1.20 1.30
E 0.70 0.80 0.90
E
L 0.15 0.20 0.25
INCHES
MIN NOM MAX
0.020 0.024 0.028
0.010 0.012 0.014
0.0028 0.0055 0.0079
0.043 0.047 0.051
0.028 0.032 0.035
0.059 0.063 0.067
0.006 0.008 0.010
A
L
H
E
−T−
SEATING
PLANE
SOLDERING FOOTPRINT*
1.40
0.0547
0.40
0.0157
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.0157
SCALE 10:1
0.40
mm
ǒ
inches
Ǔ
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BAT54XV2T1/D
4