ON Semiconductor BAT54XV2T1 Technical data

BAT54XV2T1

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 V (Typ) @ I

• Pb−Free Package is Available

= 10 mA

F

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30 VOLT

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

MAXIMUM RATINGS (T

Rating

Reverse Voltage V

= 125°C unless otherwise noted)

J

Symbol Value Unit

R

30 V

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,
(Note 1) T

Thermal Resistance,

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR−4 Minimum Pad.

= 25°C

A

Derate above 25°C

Junction−to−Ambient

P

D

R



JA

stg

200

1.57

635 °C/W

−55 to 125 °C

mW

mW/°C

1

CATHODE

2

1

2

ANODE

SOD−523

CASE 502

PLASTIC

MARKING DIAGRAM

JVM G

1

JV = Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

G

ORDERING INFORMATION

Device Package Shipping

BAT54XV2T1 SOD−523 3000 / Tape & Reel

BAT54XV2T1G SOD−523

(Pb−Free)

BAT54XV2T5G SOD−523

(Pb−Free)

3000 / Tape & Reel

8000 / Tape & Reel

†

© Semiconductor Components Industries, LLC, 2009

September, 2009 − Rev. 5

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

BAT54XV2T1/D

BAT54XV2T1

ELECTRICAL CHARACTERISTICS (T

Characteristic

Reverse Breakdown Voltage

= 10 A)

(I

R

= 25°C unless otherwise noted)

A

Symbol Min Typ Max Unit

V

Total Capacitance

(V

= 1.0 V, f = 1.0 MHz)

R

Reverse Leakage

(V

= 25 V)

R

Forward Voltage

(I

= 0.1 mA)

F

Forward Voltage

(I

= 1.0 mA)

F

Forward Voltage

(I

= 10 mA)

F

Forward Voltage

(I

= 30 mA)

F

Forward Voltage

(IF = 100 mA)

Reverse Recovery Time

(I

= IR = 10 mA, I

F

= 1.0 mA) Figure 1

R(REC)

Forward Current (DC) I

Repetitive Peak Forward Current I

Non−Repetitive Peak Forward Current

(t < 1.0 s)

(BR)R

C

I

R

V

V

V

V

V

t

rr

F

FRM

I

FSM

30 − − V

T

F

F

F

F

F

− 7.6 10 pF

− 0.5 2.0

A

− 0.22 0.24 V

− 0.29 0.32 V

− 0.35 0.40 V

− 0.41 0.5 V

− 0.52 0.8 V

− − 5.0 ns

− − 200 mA

− − 300 mA

− − 600 mA

+10 V

50  Output

Generator

820 

Pulse

2 k

0.1 F

100 H

I

0.1 F

F

t

t

p

r

10%

t

I

F

DUT

50  Input

Sampling

Oscilloscope

V

R

90%

INPUT SIGNAL

I

R

(I

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. t

» t

p

rr

is equal to 10 mA.

R(peak)

Figure 1. Recovery Time Equivalent Test Circuit

t

rr

= 1 mA

i

R(REC)

OUTPUT PULSE

= IR = 10 mA; measured

F

at i

R(REC)

= 1 mA)

t

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