ON Semiconductor BAT54HT1 Datasheet

BAT54HT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ I
Device Marking: JV
= 10 mAdc
F
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30 VOLT SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
MAXIMUM RATINGS (T
Symbol Rating Value Unit
V
Reverse Voltage 30 V
R
= 125°C unless otherwise noted)
J
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
P
R
q
TJ, T
*FR–4 Minimum Pad
Total Device Dissipation FR–5 Board,*
D
JA
stg
TA = 25°C
Derate above 25°C Thermal Resistance Junction to Ambient 635 °C/W Junction and Storage Temperature 150 °C
200
1.57mWmW/°C
1
2
PLASTIC SOD–323
CASE 477
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device Package Shipping
BAT54HT1 SOD–323 3000 / Tape & Reel
Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 0
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
BAT54HT1/D
BAT54HT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C Reverse Leakage (VR = 25 V) I Forward Voltage (IF = 0.1 mAdc) V Forward Voltage (IF = 30 mAdc) V Forward Voltage (IF = 100 mAdc) V Reverse Recovery Time
(IF = IR = 10 mAdc, I Forward Voltage (IF = 1.0 mAdc) V Forward Voltage (IF = 10 mAdc) V Forward Current (DC) I Repetitive Peak Forward Current I Non–Repetitive Peak Forward Current (t < 1.0 s) I
= 1.0 mAdc) Figure 1
R(REC)
= 25°C unless otherwise noted)
A
(BR)R
T
R
F F F
t
rr
F F
F FRM FSM
30 Volts — 7.6 10 pF — 0.5 2.0 µAdc — 0.22 0.24 Vdc — 0.41 0.5 Vdc — 0.52 1.0 Vdc — 5.0 ns
0.29 0.32 Vdc — 0.35 0.40 Vdc — 200 mAdc — 300 mAdc — 600 mAdc
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