ON Semiconductor BAT54HT1 Datasheet

BAT54HT1

Preferred Device

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 Volts (Typ) @ I

• Device Marking: JV

= 10 mAdc

F

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30 VOLT SILICON

HOT–CARRIER DETECTOR

AND SWITCHING DIODES

MAXIMUM RATINGS (T

Symbol Rating Value Unit

V

Reverse Voltage 30 V

R

= 125°C unless otherwise noted)

J

THERMAL CHARACTERISTICS

Symbol Characteristic Max Unit

P

R

q

TJ, T

*FR–4 Minimum Pad

Total Device Dissipation FR–5 Board,*

D

JA

stg

TA = 25°C

Derate above 25°C
Thermal Resistance Junction to Ambient 635 °C/W
Junction and Storage Temperature 150 °C

200

1.57mWmW/°C

1

2

PLASTIC
SOD–323

CASE 477

1

CATHODE

2

ANODE

ORDERING INFORMATION

Device Package Shipping

BAT54HT1 SOD–323 3000 / Tape & Reel

 Semiconductor Components Industries, LLC, 1999

December, 1999 – Rev. 0

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

BAT54HT1/D

BAT54HT1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
Reverse Recovery Time

(IF = IR = 10 mAdc, I
Forward Voltage (IF = 1.0 mAdc) V
Forward Voltage (IF = 10 mAdc) V
Forward Current (DC) I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current (t < 1.0 s) I

= 1.0 mAdc) Figure 1

R(REC)

= 25°C unless otherwise noted)

A

(BR)R

T

R

F
F
F

t

rr

F
F

F
FRM
FSM

30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns

— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc

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2

+10 V

820

Ω

0.1 µF

2 k

100 µH

BAT54HT1

I

F

0.1 µF
t

t

r

p

10%

t

I

F

t

rr

t

50 Ω OUTPUT

PULSE

GENERATOR

100

10

125°C

1.0

, FORWARD CURRENT (mA)

F

I

0.1

0.0 0.1

DUT

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

V

R

R(peak)

90%

INPUT SIGNAL

is equal to 10 mA.

I

R

(IF = IR = 10 mA; measured

Figure 1. Recovery Time Equivalent Test Circuit

1000

TA = 150°C

100

150°C

85°C

25°C

0.2 0.3 0.4

VF, FORWARD VOLTAGE (VOLTS)

–40°C

–55°C

0.5

0.6

, REVERSE CURRENT (µA)

R

I

0.001

1.0

0.1

0.01

10

0

5101520

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward Voltage Figure 3. Leakage Current

i

R(REC)

OUTPUT PULSE

at i

R(REC)

= 1 mA)

TA = 125°C

TA = 25°C

25

= 1 mA

TA = 85°C

30

14

12

10

8

6

4

, TOTAL CAPACITANCE (pF)

T

C

2
0

0

51015 30

VR, REVERSE VOLTAGE (VOLTS)

2520

Figure 4. T otal Capacitance

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3

J

NOTE 3

BAT54HT1

P ACKAGE DIMENSIONS

SOD–323

PLASTIC PACKAGE

K

A

1

D

B

2

CASE 477–02

ISSUE A

E

C

H

0.63 mm

0.025

ȀȀ

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.

DIM MIN MAX MIN MAX

A 1.60 1.80 0.063 0.071
B 1.15 1.35 0.045 0.053
C 0.80 1.00 0.031 0.039
D 0.25 0.40 0.010 0.016
E 0.15 REF 0.006 REF
H 0.00 0.10 0.000 0.004
J 0.089 0.177 0.0035 0.0070
K 2.30 2.70 0.091 0.106

STYLE 1:

PIN 1. CATHODE

2. ANODE

INCHESMILLIMETERS

1.60 mm

0.063

2.85 mm

0.112

mm

ǒ

inches

ȀȀ

ȀȀ

Ǔ

0.83 mm

0.033

ȀȀ

SOD–323

Soldering Footprint

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4

BAT54HT1/D