ON Semiconductor 2N7000 Technical data
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2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Drain Current
– Continuous
– Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
DSS
DGR
V
V
GSM
I
DM
P
TJ, T
R
T
GS
I
D
D
θJA
L
stg
60 Vdc
60 Vdc
±20
±40
200
500
350
2.8
–55 to
+150
357 °C/W
300 °C
mAdc
mW/°C
Vdc
Vpk
mW
°C
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200 mAMPS
60 VOLTS
R
DS(on)
G
1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
= 5 Ω
N–Channel
D
S
TO–92
CASE 29
Style 22
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
2N7000
YWW
1
Source
Y = Year
WW = Work Week
3
Drain
2
Gate
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
2N7000/D
2N7000
(
DS
,
GS
,
(V
DD
I
D
500 mA
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(V
= 15 Vdc, VDS = 0)
GSF
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
On–State Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc)
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)
= 25°C unless otherwise noted)
C
Symbol Min Max Unit
V
(BR)DSS
I
DSS
I
GSSF
V
GS(th)
r
DS(on)
V
DS(on)
I
d(on)
g
fs
60 – Vdc
–
–
– –10 nAdc
0.8 3.0 Vdc
–
–
–
–
75 – mAdc
100 – µmhos
1.0
1.0
5.0
6.0
2.5
0.45
mAdc
µAdc
Ohm
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance C
Output Capacitance
Reverse Transfer
Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1.)
Turn–On Delay Time
Turn–Off Delay Time
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
(VDD = 15 V, ID = 500 mA,
RG = 25 , RL = 30 , V
15 V,
gen
,
= 10 V)
iss
C
oss
C
rss
t
on
t
off
– 60
– 25
– 5.0
– 10
– 10
pF
ns
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2
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