ON Semiconductor 2N7000 Technical data

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2N7000

Preferred Device

Small Signal MOSFET
200 mAmps, 60 Volts

N–Channel TO–92

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage

– Continuous
– Non–repetitive (tp ≤ 50 µs)

Drain Current

– Continuous
– Pulsed

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Temperature

Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to

Ambient

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case
for 10 seconds

DSS

DGR

V

V

GSM

I

DM
P

TJ, T

R

T

GS

I

D

D

θJA

L

stg

60 Vdc
60 Vdc

±20
±40

200
500

350

2.8

–55 to

+150

357 °C/W

300 °C

mAdc

mW/°C

Vdc
Vpk

mW

°C

http://onsemi.com

200 mAMPS

60 VOLTS

R

DS(on)

G

1

2

3

MARKING DIAGRAM

& PIN ASSIGNMENT

= 5 Ω

N–Channel

D

S

TO–92

CASE 29

Style 22

 Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 5

2N7000

YWW

1

Source

Y = Year
WW = Work Week

3
Drain

2

Gate

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

2N7000/D

2N7000

(

DS

,

GS

,

(V

DD

I

D

500 mA

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)

Zero Gate Voltage Drain Current

(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)

Gate–Body Leakage Current, Forward

(V

= 15 Vdc, VDS = 0)

GSF

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

Static Drain–Source On–Resistance

(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)

On–State Drain Current

(VGS = 4.5 Vdc, VDS = 10 Vdc)

Forward Transconductance

(VDS = 10 Vdc, ID = 200 mAdc)

= 25°C unless otherwise noted)

C

Symbol Min Max Unit

V

(BR)DSS

I

DSS

I

GSSF

V

GS(th)

r

DS(on)

V

DS(on)

I

d(on)

g

fs

60 – Vdc

–
–

– –10 nAdc

0.8 3.0 Vdc

–
–

–
–

75 – mAdc

100 – µmhos

1.0

1.0

5.0

6.0

2.5

0.45

mAdc

µAdc

Ohm

Vdc

DYNAMIC CHARACTERISTICS

Input Capacitance C
Output Capacitance
Reverse Transfer

Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 1.)

Turn–On Delay Time
Turn–Off Delay Time

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

(VDD = 15 V, ID = 500 mA,

RG = 25 , RL = 30 , V

15 V,

gen

,

= 10 V)

iss

C

oss

C

rss

t

on

t

off

– 60
– 25
– 5.0

– 10
– 10

pF

ns

http://onsemi.com

2

2N7000

2.0

1.8

T

= 25°C

A

1.6

1.4

1.2

1.0

0.8

0.6

, DRAIN CURRENT (AMPS)

D

I

0.4

0.2

0

VDS, DRAIN SOURCE VOLTAGE (VOLTS)

VGS = 10 V

9 V

8 V

7 V

6 V

5 V

4 V
3 V

100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

Figure 1. Ohmic Region

2.4

2.2
VGS = 10 V

2.0
ID = 200 mA

1.8

1.6

1.4

1.2

(NORMALIZED)

1.0

0.8

, STATIC DRAIN-SOURCE ON-RESISTANCE

0.6

0.4

DS(on)

r

-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140

T, TEMPERATURE (°C)

1.0

VDS = 10 V

0.8

0.6

0.4

, DRAIN CURRENT (AMPS)

D

I

0.2

Figure 2. Transfer Characteristics

1.2

1.05

1.1

1.10

1.0

0.95

0.9

0.85

0.8

, THRESHOLD VOLTAGE (NORMALIZED)

0.75

GS(th)

V

0.7

-55°C

VGS, GATE SOURCE VOLTAGE (VOLTS)

VDS = V
ID = 1.0 mA

T, TEMPERATURE (°C)

25°C

125°C

100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

GS

Figure 3. Temperature versus Static

Drain–Source On–Resistance

ORDERING INFORMATION

Device Package Shipping

2N7000 TO–92 1000 Unit/Box
2N7000RLRA TO–92 2000 Tape & Reel
2N7000RLRM TO–92 2000 Ammo Pack
2N7000RLRP TO–92 2000 Ammo Pack
2N7000ZL1 TO–92 2000 Ammo Pack

Figure 4. Temperature versus Gate

Threshold Voltage

http://onsemi.com

3

2N7000

PACKAGE DIMENSIONS

TO–92

CASE 29–11

ISSUE AL

SEATING
PLANE

A

B

R

P

L

K

XX

V

1

G

H

C

N

D

J

SECTION X–X

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533

G 0.045 0.055 1.15 1.39

H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---

STYLE 22:

PIN 1. SOURCE

2. GATE

3. DRAIN

MILLIMETERSINCHES

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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4

2N7000/D

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