ON Semiconductor 2N4264 Datasheet
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
2
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 12 Vdc, V
(VCE = 12 Vdc, V
Collector Cutoff Current
(VCE = 12 Vdc, V
= 0.25 Vdc)
EB(off)
= 0.25 Vdc, TA = 100°C)
EB(off)
= 0.25 Vdc)
EB(off)
CEO
CBO
EBO
P
P
TJ, T
q
q
C
D
D
stg
JA
JC
15 Vdc
30 Vdc
6.0 Vdc
200 mAdc
350
2.8
1.0
8.0
–55 to +150 °C
357 °C/W
125 °C/W
COLLECTOR
3
1
EMITTER
mW/°C
mW/°C
mW
Watts
Order this document
by 2N4264/D
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
I
CEX
15 —
30 —
6.0 —
—
—
— 100
0.1
10
Vdc
Vdc
Vdc
µAdc
nAdc
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
2N4264
)
(
CC
,
EB(off)
,
(I
100 mA f
tf)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55°C)
(IC = 30 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 200 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
(1)
(1)
(1)
(1)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Turn–On Time (VCC = 3.0 Vdc, V
Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc,
Storage Time (VCC = 10 Vdc, IC = 10 mA,
Total Control Charge (VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
(VCC = 10 Vdc, V
IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C)
VCC = 10 Vdc, (IC = 10 mAdc, for ts)
=
C
(IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C)
IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)
IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)
IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)
(Fig. 3, Test Condition A)
or
EB(off
EB(off)
= 2.0 Vdc,
= 1.5 Vdc,
h
FE
V
CE(sat)
V
BE(sat)
f
C
ibo
C
obo
t
t
t
t
on
t
off
t
Q
25
40
20
40
30
20
—
—
0.65
0.75
T
d
r
s
t
f
s
T
300 — MHz
— 8.0 pF
— 4.0 pF
— 8.0 ns
— 15 ns
— 20 ns
— 15 ns
— 25 ns
— 35 ns
— 20 ns
— 80 pC
—
160
—
—
—
—
0.22
0.35
0.8
0.95
—
Vdc
Vdc
Test
Condition
A
B
C
2
Figure 1. Switching Time Equivalent Test Circuit
V
ICV
mA
10
10
100
CC
V
3
10
10
R
S
Ω
3300
560
560
R
Ω
270
960
96
C
C
S(max)
pF
12
t
V
BE(off)
4
4
–1.5
—
–2.0
V
V
1
V
V
10.55
—
6.35
–4.15
–4.65
–4.65
V
2
3
V
V
10.70
6.55
6.55
00
V
EB(off)
on
t
1
V
1
<2 ns <2 ns
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
t
off
t
1
V
3
V
2
CC
R
C
R
B
C
S
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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