ON Semiconductor 2N3773, 2N6609 Service Manual
NPN 2N3773*, PNP 2N6609
Preferred Device
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DC−DC converters or
inverters.
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Features
• Pb−Free Packages are Available**
• High Safe Operating Area (100% Tested) 150 W @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8.0 A, 4.0 V
V
= 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
CE(sat)
• For Low Distortion Complementary Designs
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current
− Continuous
− Peak (Note 2)
Base Current
− Continuous
− Peak (Note 2)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
CEO
CEX
CBO
EBO
I
I
P
TJ, T
C
B
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
JC
140 Vdc
160 Vdc
160 Vdc
7 Vdc
16
30
4
15
150
0.855
−65 to +200 °C
1.17 °C/W
W/°C
Adc
Adc
16 A COMPLEMENTARY
POWER TRANSISTORS
140 V, 150 W
MARKING
DIAGRAM
2Nxxxx
MEX
TO−204
CASE 1−07
xxxx = 3773 or 6609
A = Assembly Location
YY = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
W
*Preferred devices are recommended choices for future
use and best overall value.
AYYWW
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 10
1 Publication Order Number:
2N3773/D
NPN 2N3773*, PNP 2N6609
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ELECTRICAL CHARACTERISTICS (T
= 25C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Breakdown Voltage (Note 4)
ООООООООООООООООООООО
(I
= 0.2 Adc, IB = 0)
C
Collector−Emitter Sustaining Voltage (Note 4)
ООООООООООООООООООООО
= 0.1 Adc, V
(I
C
= 1.5 Vdc, RBE = 100 Ohms)
BE(off)
Collector−Emitter Sustaining Voltage
= 0.2 Adc, RBE = 100 Ohms)
(I
C
ООООООООООООООООООООО
Collector Cutoff Current (Note 4)
(V
= 120 Vdc, IB = 0)
CE
Collector Cutoff Current (Note 4)
ООООООООООООООООООООО
ООООООООООООООООООООО
= 140 Vdc, V
(V
CE
(V
= 140 Vdc, V
CE
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 150C)
BE(off)
Collector Cutoff Current
(V
= 140 Vdc, IE = 0)
CB
ООООООООООООООООООООО
Emitter Cutoff Current (Note 4)
(V
= 7 Vdc, IC = 0)
BE
ON CHARACTERISTICS (Note 3)
ООООООООООООООООООООООООООООООО
DC Current Gain
(I
= 8 Adc, VCE = 4 Vdc) (Note 4)
C
ООООООООООООООООООООО
= 16 Adc, VCE = 4 Vdc)
(I
C
Collector−Emitter Saturation Voltage
(I
= 8 Adc, IB = 800 mAdc) (Note 4)
ООООООООООООООООООООО
C
(I
= 16 Adc, IB = 3.2 Adc)
C
ООООООООООООООООООООО
Base−Emitter On Voltage (Note 4)
(I
= 8 Adc, VCE = 4 Vdc)
C
V
CEO(sus)
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V
CEX(sus)
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V
CER(sus)
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I
CEO
I
CEX
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I
CBO
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I
EBO
h
FE
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V
CE(sat)
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V
BE(on)
140
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160
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150
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−
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−
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−
−
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−
15
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5
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−
−
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—
−
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−
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−
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10
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2
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10
2
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5
60
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1.4
4
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2.2
Vdc
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Vdc
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Vdc
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mAdc
mAdc
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mAdc
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mAdc
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Vdc
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Vdc
DYNAMIC CHARACTERISTICS
−
Magnitude of Common−Emitter
ООООООООООООООООООООО
Small−Signal, Short−Circuit, Forward Current Transfer Ratio
= 1 A, f = 50 kHz)
(I
ООООООООООООООООООООО
C
Small−Signal Current Gain (Note 4)
(I
= 1 Adc, VCE = 4 Vdc, f = 1 kHz)
C
ООООООООООООООООООООО
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fe
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40
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SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non−repetitive), V
= 100 V, See Figure 12
CE
I
S/b
1.5
−
Adc
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device Package Shipping
2N3773 TO−204 100 Unit / Tray
2N3773G TO−204
100 Unit / Tray
(Pb−Free)
2N6609 TO−204 100 Unit / Tray
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
†
−
−
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