NPN 2N3773*, PNP 2N6609
Preferred Device
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DC−DC converters or
inverters.
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Features
• Pb−Free Packages are Available**
• High Safe Operating Area (100% Tested) 150 W @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8.0 A, 4.0 V
V
= 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
CE(sat)
• For Low Distortion Complementary Designs
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current
− Continuous
− Peak (Note 2)
Base Current
− Continuous
− Peak (Note 2)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
CEO
CEX
CBO
EBO
I
I
P
TJ, T
C
B
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
JC
140 Vdc
160 Vdc
160 Vdc
7 Vdc
16
30
4
15
150
0.855
−65 to +200 °C
1.17 °C/W
W/°C
Adc
Adc
16 A COMPLEMENTARY
POWER TRANSISTORS
140 V, 150 W
MARKING
DIAGRAM
2Nxxxx
MEX
TO−204
CASE 1−07
xxxx = 3773 or 6609
A = Assembly Location
YY = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
W
*Preferred devices are recommended choices for future
use and best overall value.
AYYWW
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 10
1 Publication Order Number:
2N3773/D
NPN 2N3773*, PNP 2N6609
Î
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ELECTRICAL CHARACTERISTICS (T
= 25C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Breakdown Voltage (Note 4)
ООООООООООООООООООООО
(I
= 0.2 Adc, IB = 0)
C
Collector−Emitter Sustaining Voltage (Note 4)
ООООООООООООООООООООО
= 0.1 Adc, V
(I
C
= 1.5 Vdc, RBE = 100 Ohms)
BE(off)
Collector−Emitter Sustaining Voltage
= 0.2 Adc, RBE = 100 Ohms)
(I
C
ООООООООООООООООООООО
Collector Cutoff Current (Note 4)
(V
= 120 Vdc, IB = 0)
CE
Collector Cutoff Current (Note 4)
ООООООООООООООООООООО
ООООООООООООООООООООО
= 140 Vdc, V
(V
CE
(V
= 140 Vdc, V
CE
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 150C)
BE(off)
Collector Cutoff Current
(V
= 140 Vdc, IE = 0)
CB
ООООООООООООООООООООО
Emitter Cutoff Current (Note 4)
(V
= 7 Vdc, IC = 0)
BE
ON CHARACTERISTICS (Note 3)
ООООООООООООООООООООООООООООООО
DC Current Gain
(I
= 8 Adc, VCE = 4 Vdc) (Note 4)
C
ООООООООООООООООООООО
= 16 Adc, VCE = 4 Vdc)
(I
C
Collector−Emitter Saturation Voltage
(I
= 8 Adc, IB = 800 mAdc) (Note 4)
ООООООООООООООООООООО
C
(I
= 16 Adc, IB = 3.2 Adc)
C
ООООООООООООООООООООО
Base−Emitter On Voltage (Note 4)
(I
= 8 Adc, VCE = 4 Vdc)
C
V
CEO(sus)
ÎÎ
V
CEX(sus)
ÎÎ
V
CER(sus)
ÎÎ
I
CEO
I
CEX
ÎÎ
ÎÎ
I
CBO
ÎÎ
I
EBO
h
FE
ÎÎ
V
CE(sat)
ÎÎ
ÎÎ
V
BE(on)
140
ÎÎ
160
ÎÎ
150
ÎÎ
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
15
ÎÎ
5
ÎÎ
−
−
ÎÎ
—
−
Î
−
Î
−
Î
10
Î
2
Î
10
2
Î
5
60
Î
−
Î
1.4
4
Î
2.2
Vdc
Î
Vdc
Î
Vdc
Î
mAdc
mAdc
Î
Î
mAdc
Î
mAdc
Î
Vdc
Î
Î
Vdc
DYNAMIC CHARACTERISTICS
−
Magnitude of Common−Emitter
ООООООООООООООООООООО
Small−Signal, Short−Circuit, Forward Current Transfer Ratio
= 1 A, f = 50 kHz)
(I
ООООООООООООООООООООО
C
Small−Signal Current Gain (Note 4)
(I
= 1 Adc, VCE = 4 Vdc, f = 1 kHz)
C
ООООООООООООООООООООО
|hfe|
ÎÎ
ÎÎ
h
fe
ÎÎ
4
ÎÎ
ÎÎ
40
ÎÎ
−
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Î
−
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SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non−repetitive), V
= 100 V, See Figure 12
CE
I
S/b
1.5
−
Adc
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device Package Shipping
2N3773 TO−204 100 Unit / Tray
2N3773G TO−204
100 Unit / Tray
(Pb−Free)
2N6609 TO−204 100 Unit / Tray
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
†
−
−
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2
NPN 2N3773*, PNP 2N6609
NPN PNP
300
200
100
, DC CURRENT GAIN
FE
h
150°C
70
25°C
−55 °C
50
30
VCE = 4 V
20
10
7.0
5.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 20
0.2
7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
2.0
IC = 4 A
1.6
1.2
0.8
IC = 8 A
IC = 16 A
300
200
150°C
25°C
100
70
−55 °C
50
30
20
, DC CURRENT GAIN
FE
h
VCE = 4 V
10
7.0
5.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 207.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain
2.0
IC = 4 A
1.6
1.2
IC = 8 A
0.8
IC = 16 A
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V
V, VOLTAGE (VOLTS)
CE
0.4
T
= 25°C
C
0
0.05
0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0
I
, BASE CURRENT (AMPS)
B
Figure 3. Collector Saturation Region
2.0
IC/IB = 10
1.6
1.2
V
BE(sat)
0.8
0.4
0
0.2
25°C
150°C
V
CE(sat)
150°C
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 20
, COLLECTOR CURRENT (AMPS)
I
C
Figure 5. “On” Voltage
25°C
0.4
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
= 25°C
C
CE
V
0
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
I
, BASE CURRENT (AMPS)
B
Figure 4. Collector Saturation Region
2.0
IC/IB = 10
1.6
1.2
V
BE(sat)
0.8
25°C
V, VOLTAGE (VOLTS)
150°C
0.4
10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 2010
I
, COLLECTOR CURRENT (AMPS)
C
150°C
V
CE(sat)
25°C
Figure 6. “On” Voltage
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3
NPN 2N3773*, PNP 2N6609
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
, COLLECTOR CURRENT (AMP)
C
0.1
I
0.05
0.03
3.0
BONDING WIRE LIMIT
THERMAL LIMIT
= 25°C, SINGLE PULSE
@ T
C
SECOND BREAKDOWN LIMIT
5.0 7.0 10 20 30 50 300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
− V
C
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
10 s
40 s
100 s
dc
70
The data of Figure 7 is based on T
200 s
1.0 ms
100 ms
500 ms
100 200
= 200C; TC is
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 200C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
J(pk)
100
80
60
THERMAL
40
20
POWER DERATING FACTOR (%)
0
0 40 80 120 160 200
DERATING
T
, CASE TEMPERATURE (°C)
C
Figure 8. Power Derating
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4
NPN 2N3773*, PNP 2N6609
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
E
2 PL
D
0.13 (0.005) Y
U
V
H
L
2
1
G
−T−
K
M
−Y−
SEATING
PLANE
M
Q
T
M
B
−Q−
0.13 (0.005) T
M
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
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5
NPN 2N3773*, PNP 2N6609
PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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2N3773/D
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