ON Semiconductor 2N6609, 2N3773 Datasheet

1

Motorola Bipolar Power Transistor Device Data

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The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

• High Safe Operating Area (100% Tested) 150 W @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage

hFE = 15 (Min) @ 8 A, 4 V V

CE(sat)

= 1.4 V (Max) @ IC = 8 A, IB = 0.8 A

• For Low Distortion Complementary Designs

*MAXIMUM RATINGS

Rating

Symbol

ОООООООО

Value

ÎÎÎÎ

Unit

Collector Emitter Voltage

V

CEO

ОООООООО

140

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

V

CEX

ОООООООО

160

ÎÎÎÎ

Vdc

Collector–Base Voltage

V

CBO

ОООООООО

160

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EBO

ОООООООО

7

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

I

C

ОООООООО

16 30

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

I

B

ОООООООО

4

15

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

ОООООООО

150

0.855

ÎÎÎÎ

Watts W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

ОООООООО

–65 to +200

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

R

θJC

ОООООООО

1.17

ÎÎÎÎ

_

C/W

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Preferred devices are Motorola recommended choices for future use and best overall value.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N3773/D

 Motorola, Inc. 1995

 





*Motorola Preferred Device

16 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

140 VOLTS

150 WATTS



CASE 1–07

TO–204AA

(TO–3)

REV 7

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2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

*Collector–Emitter Breakdown Voltage

(IC = 0.2 Adc, IB = 0)

ÎÎÎÎ

V

CEO(sus)

140

—

ÎÎÎ

Vdc

*Collector–Emitter Sustaining Voltage

(IC = 0.1 Adc, V

BE(off)

= 1.5 Vdc, RBE = 100 Ohms)

ÎÎÎÎ

V

CEX(sus)

160

—

ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage

(IC = 0.2 Adc, RBE = 100 Ohms)

ÎÎÎÎ

V

CER(sus)

150

—

ÎÎÎ

Vdc

*Collector Cutoff Current

(VCE = 120 Vdc, IB = 0)

ÎÎÎÎ

I

CEO

—

10

ÎÎÎ

mAdc

*Collector Cutoff Current

(VCE = 140 Vdc, V

BE(off)

= 1.5 Vdc)

(VCE = 140 Vdc, V

BE(off)

= 1.5 Vdc, TC = 150_C)

ÎÎÎÎ

I

CEX

— —

2

10

ÎÎÎ

mAdc

Collector Cutoff Current

(VCB = 140 Vdc, IE = 0)

ÎÎÎÎ

I

CBO

—

2

ÎÎÎ

mAdc

*Emitter Cutoff Current

(VBE = 7 Vdc, IC = 0)

ÎÎÎÎ

I

EBO

—

5

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

*(IC = 8 Adc, VCE = 4 Vdc)

(IC = 16 Adc, VCE = 4 Vdc)

ÎÎÎÎ

h

FE

15

5

60 —

ÎÎÎ

—

Collector–Emitter Saturation Voltage

*(IC = 8 Adc, IB = 800 mAdc)

(IC = 16 Adc, IB = 3.2 Adc)

ÎÎÎÎ

V

CE(sat)

— —

1.4 4

ÎÎÎ

Vdc

*Base–Emitter On Voltage

(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎ

V

BE(on)

—

2.2

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common–Emitter

Small–Signal, Short–Circuit, Forward Current Transfer Ratio

(IC = 1 A, f = 50 kHz)

ÎÎÎÎ

|hfe|

4

—

ÎÎÎ

—

*Small–Signal Current Gain

(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)

ÎÎÎÎ

h

fe

40

—

ÎÎÎ

—

SECOND BREAKDOWN CHARACTERISTICS

Second Breakdown Collector Current with Base Forward Biased

t = 1 s (non–repetitive), VCE = 100 V, See Figure 12

ÎÎÎÎ

I

S/b

1.5

—

ÎÎÎ

Adc

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%. *Indicates JEDEC Registered Data.

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3

Motorola Bipolar Power Transistor Device Data

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

300

0.2

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

5.0

0.3 0.5 0.7 1.0 2.0 3.0 5.0 20

50 30

20

100

70

h

FE

, DC CURRENT GAIN

150°C

25°C

–55°C

VCE = 4 V

NPN PNP

IC, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

7.0

10

200

7.0 10

Figure 2. DC Current Gain

150°C

25°C

–55°C

Figure 3. Collector Saturation Region

2.0

0.05 IB, BASE CURRENT (AMPS)

0

0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0

1.6

1.2

0.8

0.4 TC = 25°C

IC = 4 A

IC = 16 A

Figure 4. Collector Saturation Region

2.0

IB, BASE CURRENT (AMPS)

0

1.6

1.2

0.8

0.4 TC = 25°C

2.0

0.2 IC, COLLECTOR CURRENT (AMPS)

0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 20

1.2

0.4

0

IC/IB = 10

V

BE(sat)

V, VOLTAGE (VOLTS)

Figure 5. “On” Voltage

1.6

0.8

10

150°C

25°C

V

CE(sat)

25°C

2.0

IC, COLLECTOR CURRENT (AMPS)

1.2

0.4

IC/IB = 10

V

BE(sat)

V, VOLTAGE (VOLTS)

Figure 6. “On” Voltage

1.6

0.8 150°C

25°C

V

CE(sat)

150°C

25°C

VCE = 4 V

IC = 4 A

IC = 8 A

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 207.0 10

300

5.0

50 30

20

100

70

7.0

10

200

IC = 8 A

0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0

IC = 16 A

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 2010

150°C

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4

Motorola Bipolar Power Transistor Device Data

30

3.0

Figure 7. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20 10

5.0

3.0

2.0

1.0

0.5

0.03

5.0 7.0 10 20 30 50 300

BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C, SINGLE PULSE SECOND BREAKDOWN LIMIT

70

0.3

0.2

I

C

, COLLECTOR CURRENT (AMP)

dc

10 µs

100 µs

100 ms

0.1

0.05 100 200

40 µs

200 µs

1.0 ms

500 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 7 is based on T

J(pk)

= 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1 0% provided T

J(pk)

< 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

100

80

60

40

0

20

0 40 80 120 160 200

Figure 8. Power Derating

TC, CASE TEMPERATURE (°C)

POWER DERATING FACTOR (%)

THERMAL

DERATING

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Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF B ––– 1.050 ––– 26.67 C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N ––– 0.830 ––– 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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Motorola Bipolar Power Transistor Device Data

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2N3773/D

*2N3773/D*

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ON Semiconductor 2N6609, 2N3773 Datasheet

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