ON Semiconductor 2N3772, 2N3771 Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . designed for linear amplifiers, series pass regulators, and inductive switching
applications.
• Forward Biased Second Breakdown Current Capability
I
S/b
= 3.75 Adc @ VCE = 40 Vdc — 2N3771
I
S/b
= 2.5 Adc @ VCE = 60 Vdc — 2N3772
*MAXIMUM RATINGS
Rating
Symbol
2N3771
2N3772
Unit
Collector–Emitter Voltage
V
CEO
40
60
Vdc
Collector–Emitter Voltage
V
CEX
50
80
Vdc
Collector–Base Voltage
V
CB
50
100
Vdc
Emitter–Base Voltage
V
EB
5.0
7.0
Vdc
Collector Current — Continuous
Peak
I
C
30
30
20
30
Adc
Base Current — Continuous
Peak
I
B
7.5
15
5.0
15
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
P
D
150
0.855
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N3771, 2N3772
Unit
Thermal Resistance, Junction to Case
θ
JC
1.17
_
C/W
*Indicates JEDEC Registered Data.
200
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
150
100
50
25
P
D
, POWER DISSIPATION (WATTS)
175
125
75
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3771/D
Motorola, Inc. 1995
*Motorola Preferred Device
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
*Collector–Emitter Sustaining Voltage (1) 2N3771
(IC = 0.2 Adc, IB = 0) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
40
60
—
—
Vdc
Collector–Emitter Sustaining Voltage 2N3771
(IC = 0.2 Adc, V
EB(off)
= 1.5 Vdc, RBE = 100 Ohms) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEX(sus)
50
80
—
—
Vdc
Collector–Emitter Sustaining Voltage 2N3771
(IC = 0.2 Adc, RBE = 100 Ohms) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CER(sus)
45
70
—
—
Vdc
*Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) 2N3771
(VCE = 50 Vdc, IB = 0) 2N3772
(VCE = 25 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEO
—
—
10
10
mAdc
*Collector Cutoff Current
(VCE = 50 Vdc, V
EB(off)
= 1.5 Vdc) 2N3771
(VCE = 100 Vdc, V
EB(off)
= 1.5 Vdc) 2N3772
(VCE = 45 Vdc, V
EB(off)
= 1.5 Vdc) 2N6257
(VCE = 30 Vdc, V
EB(off)
= 1.5 Vdc, TC = 150_C) 2N3771
2N3772
(VCE = 45 Vdc, V
EB(off)
= 1.5 Vdc, TC = 150_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEV
—
—
—
—
—
2.0
5.0
4.0
10
10
mAdc
*Collector Cutoff Current
(VCB = 50 Vdc, IE = 0) 2N3771
(VCB = 100 Vdc, IE = 0) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CBO
—
—
2.0
5.0
mAdc
*Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0) 2N3771
(VBE = 7.0 Vdc, IC = 0) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
—
—
5.0
5.0
mAdc
*ON CHARACTERISTICS
DC Current Gain (1)
(IC = 15 Adc, VCE = 4.0 Vdc) 2N3771
(IC = 10 Adc, VCE = 4.0 Vdc) 2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc) 2N3771
(IC = 20 Adc, VCE = 4.0 Vdc) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
15
15
5.0
5.0
60
60
—
—
—
Collector–Emitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc) 2N3771
(IC = 10 Adc, IB = 1.0 Adc) 2N3772
(IC = 30 Adc, IB = 6.0 Adc) 2N3771
(IC = 20 Adc, IB = 4.0 Adc) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
—
—
—
—
2.0
1.4
4.0
4.0
Vdc
Base–Emitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc) 2N3771
(IC = 10 Adc, VCE = 4.0 Vdc) 2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
—
—
2.7
2.2
Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f
test
= 50 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
f
T
0.2
—
MHz
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
fe
40
—
—
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non–repetitive)
(VCE = 40 Vdc) 2N3771
(VCE = 60 Vdc) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
S/b
3.75
2.5
—
—
Adc
*Indicates JEDEC Registered Data.
(1) Pulse Test: 300 µs, Rep. Rate 60 cps.
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