ON Semiconductor 2N3055A, 2N3055A-D, MJ15015, MJ15016, 2N3055AG Service Manual

2N3055A (NPN),

S

MJ15015 (NPN),
MJ15016 (PNP)

MJ15015 and MJ15016 are Preferred Devices

Complementary Silicon
High−Power Transistors

These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.

Features

• Current−Gain − Bandwidth−Product @ I

fT= 0.8 MHz (Min) − NPN

= 2.2 MHz (Min) − PNP

• Safe Operating Area − Rated to 60 V and 120 V, Respectively

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage

MJ15015, MJ15016

Collector−Base Voltage

MJ15015, MJ15016

Collector−Emitter Voltage Base
Reversed Biased 2N3055A

MJ15015, MJ15016
Emitter−Base Voltage V
Collector Current − Continuous I
Base Current I
Total Device Dissipation @ TC = 25_C

Derate above 25_C 2N3055A

2N3055A

2N3055A

= 1.0 Adc

C

V

CEO

V

CBO

V

CEV

EBO

C
B

P

D

60

120

100
200

100
200

7.0 Vdc
15 Adc

7.0 Adc

115

0.65

Vdc

Vdc

Vdc

W/_C

W

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15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 120 VOLTS − 115, 180 WATT

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAMS

2N3055AG

AYWW

MEX

MJ1501xG

AYWW

MEX

Total Device Dissipation @ TC = 25_C
Derate above 25_C

MJ15015, MJ15016

Operating and Storage Junction
Temperature Range

TJ, T

stg

180

1.03

−65 to +200

_C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Max Unit

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data. (2N3055A)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 6

R

1.52 0.98

q

JC

_C/W

1 Publication Order Number:

2N3055A = Device Code
MJ1501x = Device Code

x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

2N3055A/D

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

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ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS (Note 2)

ООООООООООООООООООООООООООООООО

Collector−Emitter Sustaining Voltage (Note 3) 2N3055A

ООООООООООООООООООО

= 200 mAdc, IB = 0) MJ15015, MJ15016

(I

C

Collector Cutoff Current

ООООООООООООООООООО

(VCE = 30 Vdc, V
(VCE = 60 Vdc, V

ООООООООООООООООООО

Collector Cutoff Current (Note 3) 2N3055A

(V

= Rated Value, V

CEV

Collector Cutoff Current

ООООООООООООООООООО

(V

= Rated Value, V

CEV

TC = 150_C) MJ15015, MJ15016

ООООООООООООООООООО

Emitter Cutoff Current 2N3055A

(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016

ООООООООООООООООООО

SECOND BREAKDOWN (Note 3)

ООООООООООООООООООООООООООООООО

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s non−repetitive) 2N3055A

ООООООООООООООООООО

(VCE = 60 Vdc) MJ15015, MJ15016

= 0 Vdc) 2N3055A

BE(off)

= 0 Vdc) MJ15015, MJ15016

BE(off)

= 1.5 Vdc) MJ15015, MJ15016

BE(off)

= 1.5 Vdc, 2N3055A

BE(off)

= 25°C unless otherwise noted)

C

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

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I

CEV

I

CEV

ÎÎÎ

ÎÎÎ

I

EBO

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I

S/b

ÎÎÎ

Min

60

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120

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−

−

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−

−

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−

−

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−

−

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1.95

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3.0

Max

−

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−

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0.7

0.1

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5.0

1.0

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30

6.0

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5.0

0.2

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−

Î

−

Unit

Vdc

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mAdc

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mAdc

mAdc

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mAdc

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Adc

ÎÎ

ON CHARACTERISTICS (Note 2 and 3)

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)

ООООООООООООООООООО

(IC = 4.0 Adc, VCE = 4.0 Vdc)

ООООООООООООООООООО

(IC = 10 Adc, VCE = 4.0 Vdc)

h

FE

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10

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20

ÎÎ

5.0

70

Î

70

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−

−

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Collector−Emitter Saturation Voltage

ООООООООООООООООООО

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)

ООООООООООООООООООО

(IC = 15 Adc, IB = 7.0 Adc)

Base−Emitter On Voltage

ООООООООООООООООООО

(IC = 4.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS (Note 3)

Current−Gain − Bandwidth Product 2N3055A, MJ15015

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016

ООООООООООООООООООО

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

ООООООООООООООООООО

SWITCHING CHARACTERISTICS (2N3055A only) (Note 3)

RESISTIVE LOAD

Delay Time

ООООООО

Rise Time
Storage Time
Fall Time

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4 Adc,

ООООООО

tp = 25 ms Duty Cycle v 2%

ООООООО

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

3. Indicates JEDEC Registered Data. (2N3055A)

V

CE(sat)

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V

BE(on)

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f

T

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C

ob

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t

d

t

r

t

s

t

f

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−

−

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−

0.7

ÎÎ

0.8

2.2

ÎÎ

60

ÎÎ

−

−

−

−

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1.1

3.0

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5.0

1.8

Î

6.0
18

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600

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0.5

4.0

3.0

6.0

Vdc

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Vdc

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MHz

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pF

ÎÎ

ms
ms
ms
ms

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