ON Semiconductor 2N3055, MJ2955 Service Manual

2N3055(NPN), MJ2955(PNP)

Preferred Device

Complementary Silicon
Power Transistors

Complementary silicon power transistors are designed for

general−purpose switching and amplifier applications.

Features

• DC Current Gain − h

= 20−70 @ IC = 4 Adc

FE

• Collector−Emitter Saturation Voltage −

V

= 1.1 Vdc (Max) @ IC = 4 Adc

CE(sat)

• Excellent Safe Operating Area

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V

Collector Current − Continuous I
Base Current I
Total Power Dissipation @ TC = 25°C

Derate Above 25°C
Operating and Storage Junction

Temperature Range

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

CEO
CER

P

TJ, T

CB
EB
C

B

D

stg

60 Vdc
70 Vdc

100 Vdc

7 Vdc

15 Adc

7 Adc

115

0.657

−65 to +200

W

W/°C

°C

http://onsemi.com

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 VOLTS, 115 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

xxxx55G
AYYWW

MEX

160

140

120

100

80

60

40

, POWER DISSIPATION (WATTS)

D

P

20

0

0 25 50 75 100 125 150 175 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 6

1 Publication Order Number:

xxxx55 = Device Code

G = Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin

xxxx = 2N30 or MJ20

ORDERING INFORMATION

Device Package Shipping

2N3055 TO−204AA 100 Units / Tray
2N3055G TO−204AA

(Pb−Free)

MJ2955 TO−204AA
MJ2955G TO−204AA

(Pb−Free)

Preferred devices are recommended choices for future use
and best overall value.

100 Units / Tray

100 Units / Tray
100 Units / Tray

2N3055/D

THERMAL CHARACTERISTICS

Î

Î

Î

Î

Î

Î

Î

Î

Î

Î

Thermal Resistance, Junction−to−Case

2N3055(NPN), MJ2955(PNP)

Characteristic

Symbol

R

q

JC

Max

1.52

Unit

_C/W

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS*

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) V
Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current

(VCE = 100 Vdc, V

ООООООООООООООООООООО

(VCE = 100 Vdc, V

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 150°C)

BE(off)

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

ON CHARACTERISTICS* (Note 1)

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)

Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) V

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

ООООООООООООООООООООО

(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)

Symbol

CEO(sus)

V

CER(sus)

I

CEO

I

CEX

ÎÎ

I

EBO

h

FE

V

CE(sat)

BE(on)

I

s/b

ÎÎ

Min

Max

60 − Vdc
70 − Vdc

−

−

ÎÎ

−

−

20

5.0

0.7

1.0

Î

5.0

5.0

70

−

− 1.1

3.0

− 1.5 Vdc

2.87

ÎÎ

−

Î

Unit

mAdc
mAdc

Î

mAdc

−

Vdc

Adc

Î

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
*Small−Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

*Indicates Within JEDEC Registration. (2N3055)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

20

10

0.6

, COLLECTOR CURRENT (AMP)

C

I

0.4

50 ms

dc

1 ms

6
4

2

500 ms

250 ms

1

BONDING WIRE LIMIT
THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25°C; T
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.

SECOND BREAKDOWN LIMIT

0.2
6

10 20 40 60

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 2. Active Region Safe Operating Area

f

T

h

fe

f

hfe

2.5
15
10

−

120

−

MHz

−

kHz

CE

is

J(pk)

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