ON Semiconductor 2N2222 Service Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
1997 May 29
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
handbook, halfpage
1
3
2
2
MAM264
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
2N2222 − 60 V
2N2222A − 75 V
V
CEO
collector-emitter voltage open base
2N2222 − 30 V
2N2222A − 40 V
I
C
P
tot
h
FE
f
T
collector current (DC) − 800 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= 10 mA; VCE=10V 75 −
transition frequency IC= 20 mA; VCE= 20 V; f = 100 MHz
2N2222 250 − MHz
2N2222A 300 − MHz
t
off
turn-off time I
= 150 mA; I
Con
= 15 mA; I
Bon
= −15 mA − 250 ns
Boff
1997 May 29 2
Philips Semiconductors Product specification
NPN switching transistors 2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
2N2222 − 60 V
2N2222A − 75 V
collector-emitter voltage open base
2N2222 − 30 V
2N2222A − 40 V
emitter-base voltage open collector
2N2222 − 5V
2N2222A − 6V
collector current (DC) − 800 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
T
≤ 25 °C − 1.2 W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 350 K/W
thermal resistance from junction to case 146 K/W
1997 May 29 3
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