ON Semiconductor 1N5820, 1N5821, 1N5822 Technical data

1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
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Features
Extremely Low V
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to
the part number
Pb-Free Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
AXIAL LEAD
CASE 267-05
(DO-201AD)
STYLE 1
MARKING DIAGRAM
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 10
1 Publication Order Number:
A
1N
582x
YYWWG
G
A = Assembly Location 1N582x = Device Code x = 0, 1, or 2 YY = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
See detailed ordering and shipping information on page 3 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
ORDERING INFORMATION
1N5820/D
1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage V
RMS Reverse Voltage V
Average Rectified Forward Current (Note 1)
V
0.2 V
R(equiv)
(R
= 28°C/W, P.C. Board Mounting, see Note 5)
q
JA
R(dc)
, TL = 95°C
Ambient Temperature
Rated V R
q
JA
, P
R(dc)
= 28°C/W
F(AV)
= 0
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase 60 Hz, T
= 75°C)
L
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
V
RRM
V
RWM
V
RSM
R(RMS)
I
O
T
I
FSM
TJ, T
20 30 40 V
R
24 36 48 V
14 21 28 V
3.0
A
90 85 80 °C
A
80 (for one cycle) A
stg
-65 to +125 °C
*THERMAL CHARACTERISTICS (Note 5)
Characteristic
Thermal Resistance, Junction-to-Ambient
*ELECTRICAL CHARACTERISTICS (T
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
= 1.0 Amp)
F
= 3.0 Amp)
(i
F
(i
= 9.4 Amp)
F
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2) TL = 25°C T
= 100°C
L
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820-22.
= 25°C unless otherwise noted) (Note 1)
L
Symbol Max Unit
R
q
JA
28 °C/W
Symbol 1N5820 1N5821 1N5822 Unit
V
F
i
R
0.370
0.475
0.850
2.0 20
0.380
0.500
0.900
2.0 20
0.390
0.525
0.950
2.0 20
V
mA
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2
1N5820, 1N5821, 1N5822
ORDERING INFORMATION
Device Package Shipping
1N5820 Axial Lead 500 Units/Bag
1N5820G Axial Lead
(Pb-Free)
1N5820RL Axial Lead 1500/Tape & Reel
1N5820RLG Axial Lead
(Pb-Free)
1N5821 Axial Lead 500 Units/Bag
1N5821G Axial Lead
(Pb-Free)
1N5821RL Axial Lead 1500/Tape & Reel
1N5821RLG Axial Lead
(Pb-Free)
1N5822 Axial Lead 500 Units/Bag
1N5822G Axial Lead
(Pb-Free)
1N5822RL Axial Lead 1500/Tape & Reel
1N5822RLG Axial Lead
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
500 Units/Bag
1500/Tape & Reel
500 Units/Bag
1500/Tape & Reel
500 Units/Bag
1500/Tape & Reel
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3
1N5820, 1N5821, 1N5822
NOTE 3 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 V
. Proper derating may be
RWM
accomplished by use of equation (1).
T
where T
= T
A(max)
= Maximum allowable ambient temperature
A(max)
T
= Maximum allowable junction temperature
J(max)
J(max)
R
P
F(AV)
R
JA
q
P
R(AV)
(1)
JA
q
(125°C or the temperature at which thermal runaway occurs, whichever is lowest)
P
= Average forward power dissipation
F(AV)
P
= Average reverse power dissipation
R(AV)
= Junction-to-ambient thermal resistance
R
JA
q
Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2).
T
R
= T
J(max)
R
P
JA
R(AV)
q
(2)
Substituting equation (2) into equation (1) yields:
T
Inspection of equations (2) and (3) reveals that T
A(max)
= TR R
P
JA
F(AV)
q
is the
R
(3)
ambient temperature at which thermal runaway occurs or where T
= 125°C, when forward power is zero. The
J
transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For
use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is:
V
R(equiv)
= V
F (4)
(FM)
The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find T
for 1N5821 operated in a
A(max)
12-volt dc supply using a bridge circuit with capacitive filter such that I Voltage = 10 V
Step 1. Find V
Step 2. Find T
Step 3. Find P
Step 4. Find T
= 2.0 A (I
DC
= 1.0 A), I
F(AV)
, R
= 40°C/W.
(rms)
F(AV)
@
JA
q
R(equiv).
V
R
@ V
Read F = 0.65 from Table 1,
= (1.41) (10) (0.65) = 9.2 V.
R(equiv)
from Figure 2. Read TR = 108°C
= 9.2 V and R
R
from Figure 6. **Read P
I
(FM)
10 andI
I
(AV)
from equation (3).
A(max)
T
= 108 (0.85) (40) = 74°C.
A(max)
F(AV)
(FM)/I(AV)
= 40°C/W.
JA
q
F(AV)
1.0A.
= 10, Input
= 0.85 W
**Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR-prefix devices, using P
from Figure 6.
F(AV)
Table 1. Values for Factor F
Full Wave,
Circuit Half Wave Full Wave, Bridge
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that V †Use line to center tap voltage for V
R(PK)
2.0 V
in(PK)
.
in.
Center Tapped*†
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4
1N5820, 1N5821, 1N5822
125
°
115
105
95
85
, REFERENCE TEMPERATURE ( C)T
R
T
75
125
°
115
105
95
85
, REFERENCE TEMPERATURE ( C)
R
75
20
15
10
8.0
125
20
°
115
15
10
105
R
(°C/W) = 70
q
JA
50
40
28
5.03.0 4.0 7.0 10 20
, REVERSE VOLTAGE (VOLTS)
V
R
152.0
Figure 1. Maximum Reference Temperature
1N5820
95
85
, REFERENCE TEMPERATURE ( C)
R
T
75
R
(°C/W) = 70
q
JA
50
40
28
5.03.0 4.0 7.0 10 20
V
, REVERSE VOLTAGE (VOLTS)
R
15
Figure 2. Maximum Reference Temperature
1N5821
40
20
15
10
8.0
35
30
25
MAXIMUM TYPICAL
20
R
(°C/W) = 70
q
JA
15
50
40
28
5.0 7.0 10 15 20 3/8 4/8 5/8 6/8 7/8 1.0
V
, REVERSE VOLTAGE (VOLTS)
R
304.0
, THERMAL RESISTANCE
JL
q
R
10
JUNCTION-TO-LEAD ( C/W)°
5.0
0
2/840
1/80
BOTH LEADS TO HEATSINK, EQUAL LENGTH
L, LEAD LENGTH (INCHES)
8.0
30
Figure 3. Maximum Reference Temperature
Figure 4. Steady-State Thermal Resistance
1N5822
1.0 The temperature of the lead should be measured using a ther‐ mocouple placed on the lead as close as possible to the tie point.
0.5 The thermal mass connected to the tie point is normally large
0.3
enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once
0.2
0.1
(NORMALIZED)
0.05
0.03
0.02
r(t), TRANSIENT THERMAL RESISTANCE
0.01
steady-state conditions are achieved. Using the measured value of T T
, the junction temperature may be determined by:
L
= TL + DT
J
JL
t
p
DT DT
r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time t
+ tp, etc.
1
P
pk
t
1
= Ppk R
JL
= the increase in junction temperature above the lead temperature.
JL
P
pk
DUTY CYCLE = t PEAK POWER, Ppk, is peak of an
TIME
equivalent square power pulse.
[D + (1 - D) r(t1 + tp) + r(tp) - r(t1)] where:
q
JL
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms)
Figure 5. Thermal Response
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5
LEAD LENGTH = 1/4
p/t1
20 k
1N5820, 1N5821, 1N5822
10
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
P
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
SINE WAVE
I
(FM)
p(ResistiveLoad)
I
(AV)
Capacitive Loads
0.2 0.3 0.5 2.0
I
F(AV)
5.0 10
20
0.7 1.0 7.0 10
, AVERAGE FORWARD CURRENT (AMP)
SQUARE WAVE
TJ 125°C
3.00.1
5.0
Figure 6. Forward Power Dissipation 1N5820-22
NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL
R
q
T
dc
A(A)
S(A)
R
q
T
L(A)
L(A)
R
q
T
C(A)TJ
J(A)
R
q
P
D
J(K)
R
q
T
C(K)
L(K)
R
q
S(K)
T
A(K)
T
L(K)
Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify:
T
= Ambient Temperature TC = Case Temperature
A
T
= Lead Temperature TJ = Junction Temperature
L
= Thermal Resistance, Heatsink to Ambient
R
S
q
= Thermal Resistance, Lead-to-Heatsink
R
L
q
= Thermal Resistance, Junction-to-Case
R
J
q
P
= Total Power Dissipation = PF + P
D
R
PF = Forward Power Dissipation P
= Reverse Power Dissipation
R
(Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: R
= 42°C/W/in typically and 48°C/W/in maximum
L
q
= 10°C/W typically and 16°C/W maximum
R
J
q
The maximum lead temperature may be found as follows: T
= T
L
where n TJL R
J(max)
n T
q
JL
JL
· P
D
NOTE 5 — MOUNTING DATA
Data shown for thermal resistance junction-to-ambient (R for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR R
Mounting
Method
1
2
3
Lead Length, L (in)
1/8 1/4 1/2 3/4
50 51 53 55 °C/W
58 59 61 63
q
28
IN STILL AIR
JA
R
q
°C/W
°C/W
JA
q
JA
Mounting Method 1
P.C. Board where available
copper surface is small.
)
LL
Mounting Method 2
LL
VECTOR PUSH-IN
TERMINALS T-28
Mounting Method 3
P.C. Board with 2-1/2, x 2-1/2, copper surface.
L = 1/2
BOARD GROUND
PLANE
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6
1N5820, 1N5821, 1N5822
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
, INSTANTANEOUS FORWARD CURRENT (AMP)
F
i
0.3
0.2
0.1
TJ = 100°C
25°C
100
70
50
30
20
, PEAK HALF-WAVE CURRENT (AMP)
FSM
I
10
100
50
20
10
5.0
2.0
1.0
0.5
TL = 75°C f = 60 Hz
1 CYCLE
SURGE APPLIED AT RATED LOAD CONDITIONS
5.0 1001.0
7.0 102.0 3.0
NUMBER OF CYCLES
20 30 50 70
Figure 8. Maximum Non-Repetitive Surge
Current
TJ = 125°C
100°C
75°C
0.07
0.05
500
300
200
C, CAPACITANCE (pF)
100
70
1.0
1.2
0.40 0.2 0.6 0.8
v
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
1.10.30.1 0.5 0.7 1.30.9
Figure 7. Typical Forward Voltage
1N5820
TJ = 25°C f = 1.0 MHz
1N5822
1.00.5
0.7 7.0 20 30
2.0 3.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
1N5821
0.2
R
I , REVERSE CURRENT (mA)
1.4
0.1
0.05
0.02
0.01
25°C
8.00
4.0 12 20 28 36
16
V
, REVERSE VOLTAGE (VOLTS)
R
24 32 40
Figure 9. Typical Reverse Current
NOTE 6 — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction di‐ ode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit ana‐ lysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.)
1N5820 1N5821 1N5822
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7
1N5820, 1N5821, 1N5822
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267-05
(DO-201AD)
ISSUE G
D
1
B
K
A
2
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 0.287 0.374 7.30 9.50 B 0.189 0.209 4.80 5.30 D 0.047 0.051 1.20 1.30 K 1.000 --- 25.40 ---
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
MILLIMETERSINCHES
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1N5820/D
8
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