ON Semiconductor 1N5820, 1N5821, 1N5822 Technical data

1N5820, 1N5821, 1N5822

1N5820 and 1N5822 are Preferred Devices

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free wheeling diodes, and
polarity protection diodes.

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Features

•Extremely Low V

F

•Low Power Loss/High Efficiency

•Low Stored Charge, Majority Carrier Conduction

•Shipped in plastic bags, 500 per bag

•Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to

the part number

•Pb-Free Packages are Available*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 1.1 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Polarity: Cathode indicated by Polarity Band

SCHOTTKY BARRIER

RECTIFIERS

3.0 AMPERES

20, 30, 40 VOLTS

AXIAL LEAD

CASE 267-05

(DO-201AD)

STYLE 1

MARKING DIAGRAM

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

December, 2007 - Rev. 10

1 Publication Order Number:

A

1N

582x

YYWWG

G

A = Assembly Location
1N582x = Device Code
x = 0, 1, or 2
YY = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)

See detailed ordering and shipping information on page 3 of
this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

ORDERING INFORMATION

1N5820/D

1N5820, 1N5821, 1N5822

MAXIMUM RATINGS

Rating Symbol 1N5820 1N5821 1N5822 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

Non-Repetitive Peak Reverse Voltage V

RMS Reverse Voltage V

Average Rectified Forward Current (Note 1)

V

 0.2 V

R(equiv)

(R

= 28°C/W, P.C. Board Mounting, see Note 5)

q

JA

R(dc)

, TL = 95°C

Ambient Temperature

Rated V
R

q

JA

, P

R(dc)

= 28°C/W

F(AV)

= 0

Non-Repetitive Peak Surge Current

(Surge applied at rated load conditions, half wave, single phase
60 Hz, T

= 75°C)

L

Operating and Storage Junction Temperature Range

(Reverse Voltage applied)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

V

RRM

V

RWM

V

RSM

R(RMS)

I

O

T

I

FSM

TJ, T

20 30 40 V

R

24 36 48 V

14 21 28 V

3.0

A

90 85 80 °C

A

80 (for one cycle) A

stg

-65 to +125 °C

*THERMAL CHARACTERISTICS (Note 5)

Characteristic

Thermal Resistance, Junction-to-Ambient

*ELECTRICAL CHARACTERISTICS (T

Characteristic

Maximum Instantaneous Forward Voltage (Note 2)

(i

= 1.0 Amp)

F

= 3.0 Amp)

(i

F

(i

= 9.4 Amp)

F

Maximum Instantaneous Reverse Current

@ Rated dc Voltage (Note 2)
TL = 25°C
T

= 100°C

L

1. Lead Temperature reference is cathode lead 1/32″ from case.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820-22.

= 25°C unless otherwise noted) (Note 1)

L

Symbol Max Unit

R

q

JA

28 °C/W

Symbol 1N5820 1N5821 1N5822 Unit

V

F

i

R

0.370

0.475

0.850

2.0
20

0.380

0.500

0.900

2.0
20

0.390

0.525

0.950

2.0
20

V

mA

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2

1N5820, 1N5821, 1N5822

ORDERING INFORMATION

Device Package Shipping

1N5820 Axial Lead 500 Units/Bag

1N5820G Axial Lead

(Pb-Free)

1N5820RL Axial Lead 1500/Tape & Reel

1N5820RLG Axial Lead

(Pb-Free)

1N5821 Axial Lead 500 Units/Bag

1N5821G Axial Lead

(Pb-Free)

1N5821RL Axial Lead 1500/Tape & Reel

1N5821RLG Axial Lead

(Pb-Free)

1N5822 Axial Lead 500 Units/Bag

1N5822G Axial Lead

(Pb-Free)

1N5822RL Axial Lead 1500/Tape & Reel

1N5822RLG Axial Lead

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

500 Units/Bag

1500/Tape & Reel

500 Units/Bag

1500/Tape & Reel

500 Units/Bag

1500/Tape & Reel

†

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3

1N5820, 1N5821, 1N5822

NOTE 3 — DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V

. Proper derating may be

RWM

accomplished by use of equation (1).

T

where T

= T

A(max)

= Maximum allowable ambient temperature

A(max)

T

= Maximum allowable junction temperature

J(max)

J(max)

 R

P

F(AV)

 R

JA

q

P

R(AV)

(1)

JA

q

(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)

P

= Average forward power dissipation

F(AV)

P

= Average reverse power dissipation

R(AV)

= Junction-to-ambient thermal resistance

R

JA

q

Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).

T

R

= T

J(max)

 R

P

JA

R(AV)

q

(2)

Substituting equation (2) into equation (1) yields:

T

Inspection of equations (2) and (3) reveals that T

A(max)

= TR  R

P

JA

F(AV)

q

is the

R

(3)

ambient temperature at which thermal runaway occurs or
where T

= 125°C, when forward power is zero. The

J

transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For

use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:

V

R(equiv)

= V

 F (4)

(FM)

The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.

EXAMPLE: Find T

for 1N5821 operated in a

A(max)

12-volt dc supply using a bridge circuit with capacitive filter
such that I
Voltage = 10 V

Step 1. Find V

Step 2. Find T

Step 3. Find P

Step 4. Find T

= 2.0 A (I

DC

= 1.0 A), I

F(AV)

, R

= 40°C/W.

(rms)

F(AV)

@

JA

q

R(equiv).

V

R

@ V

Read F = 0.65 from Table 1,

= (1.41) (10) (0.65) = 9.2 V.

R(equiv)

from Figure 2. Read TR = 108°C

= 9.2 V and R

R

from Figure 6. **Read P

I

(FM)

 10 andI

I

(AV)

from equation (3).

A(max)

T

= 108  (0.85) (40) = 74°C.

A(max)

F(AV)

(FM)/I(AV)

= 40°C/W.

JA

q

F(AV)

 1.0A.

= 10, Input

= 0.85 W

**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBR-prefix devices, using P

from Figure 6.

F(AV)

Table 1. Values for Factor F

Full Wave,

Circuit Half Wave Full Wave, Bridge

Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive

Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3

Square Wave 0.75 1.5 0.75 0.75 1.5 1.5

*Note that V
†Use line to center tap voltage for V

R(PK)

 2.0 V

in(PK)

.

in.

Center Tapped*†

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4

1N5820, 1N5821, 1N5822

125

°

115

105

95

85

, REFERENCE TEMPERATURE ( C)T

R

T

75

125

°

115

105

95

85

, REFERENCE TEMPERATURE ( C)

R

75

20

15

10

8.0

125

20

°

115

15

10

105

R

(°C/W) = 70

q

JA

50

40

28

5.03.0 4.0 7.0 10 20

, REVERSE VOLTAGE (VOLTS)

V

R

152.0

Figure 1. Maximum Reference Temperature

1N5820

95

85

, REFERENCE TEMPERATURE ( C)

R

T

75

R

(°C/W) = 70

q

JA

50

40

28

5.03.0 4.0 7.0 10 20

V

, REVERSE VOLTAGE (VOLTS)

R

15

Figure 2. Maximum Reference Temperature

1N5821

40

20

15

10

8.0

35

30

25

MAXIMUM
TYPICAL

20

R

(°C/W) = 70

q

JA

15

50

40

28

5.0 7.0 10 15 20 3/8 4/8 5/8 6/8 7/8 1.0

V

, REVERSE VOLTAGE (VOLTS)

R

304.0

, THERMAL RESISTANCE

JL

q

R

10

JUNCTION-TO-LEAD ( C/W)°

5.0

0

2/840

1/80

BOTH LEADS TO HEATSINK,
EQUAL LENGTH

L, LEAD LENGTH (INCHES)

8.0

30

Figure 3. Maximum Reference Temperature

Figure 4. Steady-State Thermal Resistance

1N5822

1.0
The temperature of the lead should be measured using a ther‐
mocouple placed on the lead as close as possible to the tie point.

0.5
The thermal mass connected to the tie point is normally large

0.3

enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once

0.2

0.1

(NORMALIZED)

0.05

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

steady-state conditions are achieved. Using the measured
value of T
T

, the junction temperature may be determined by:

L

= TL + DT

J

JL

t

p

DT
DT

r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time
t

+ tp, etc.

1

P

pk

t

1

= Ppk • R

JL

= the increase in junction temperature above the lead temperature.

JL

P

pk

DUTY CYCLE = t
PEAK POWER, Ppk, is peak of an

TIME

equivalent square power pulse.

[D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:

q

JL

0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 5. Thermal Response

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5

LEAD LENGTH = 1/4″

p/t1

20 k

1N5820, 1N5821, 1N5822

10

, AVERAGE POWER DISSIPATION (WATTS)

F(AV)

P

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

SINE WAVE

I

(FM)

 p(ResistiveLoad)

I

(AV)

Capacitive
Loads

0.2 0.3 0.5 2.0

I

F(AV)

5.0
10



20

0.7 1.0 7.0 10

, AVERAGE FORWARD CURRENT (AMP)

SQUARE WAVE

TJ ≈ 125°C

3.00.1

5.0

Figure 6. Forward Power Dissipation 1N5820-22

NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL

R

q

T

dc

A(A)

S(A)

R

q

T

L(A)

L(A)

R

q

T

C(A)TJ

J(A)

R

q

P

D

J(K)

R

q

T

C(K)

L(K)

R

q

S(K)

T

A(K)

T

L(K)

Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:

T

= Ambient Temperature TC = Case Temperature

A

T

= Lead Temperature TJ = Junction Temperature

L

= Thermal Resistance, Heatsink to Ambient

R

S

q

= Thermal Resistance, Lead-to-Heatsink

R

L

q

= Thermal Resistance, Junction-to-Case

R

J

q

P

= Total Power Dissipation = PF + P

D

R

PF = Forward Power Dissipation
P

= Reverse Power Dissipation

R

(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
R

= 42°C/W/in typically and 48°C/W/in maximum

L

q

= 10°C/W typically and 16°C/W maximum

R

J

q

The maximum lead temperature may be found as follows:
T

= T

L

where n TJL  R

J(max)

 n T

q

JL

JL

· P

D

NOTE 5 — MOUNTING DATA

Data shown for thermal resistance junction-to-ambient (R
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.

TYPICAL VALUES FOR R

Mounting

Method

1

2

3

Lead Length, L (in)

1/8 1/4 1/2 3/4

50 51 53 55 °C/W

58 59 61 63

q

28

IN STILL AIR

JA

R

q

°C/W

°C/W

JA

q

JA

Mounting Method 1

P.C. Board where available

copper surface is small.

)

LL

Mounting Method 2

LL

VECTOR PUSH-IN

TERMINALS T-28

Mounting Method 3

P.C. Board with
2-1/2, x 2-1/2,
copper surface.

L = 1/2″

BOARD GROUND

PLANE

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6

1N5820, 1N5821, 1N5822

50

30

20

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

, INSTANTANEOUS FORWARD CURRENT (AMP)

F

i

0.3

0.2

0.1

TJ = 100°C

25°C

100

70

50

30

20

, PEAK HALF-WAVE CURRENT (AMP)

FSM

I

10

100

50

20

10

5.0

2.0

1.0

0.5

TL = 75°C
f = 60 Hz

1 CYCLE

SURGE APPLIED AT RATED LOAD CONDITIONS

5.0 1001.0

7.0 102.0 3.0

NUMBER OF CYCLES

20 30 50 70

Figure 8. Maximum Non-Repetitive Surge

Current

TJ = 125°C

100°C

75°C

0.07

0.05

500

300

200

C, CAPACITANCE (pF)

100

70

1.0

1.2

0.40 0.2 0.6 0.8

v

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

F

1.10.30.1 0.5 0.7 1.30.9

Figure 7. Typical Forward Voltage

1N5820

TJ = 25°C
f = 1.0 MHz

1N5822

1.00.5

0.7 7.0 20 30

2.0 3.0 5.0 10

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Typical Capacitance

1N5821

0.2

R

I , REVERSE CURRENT (mA)

1.4

0.1

0.05

0.02

0.01

25°C

8.00

4.0 12 20 28 36

16

V

, REVERSE VOLTAGE (VOLTS)

R

24 32 40

Figure 9. Typical Reverse Current

NOTE 6 — HIGH FREQUENCY OPERATION

Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di‐
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana‐
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)

1N5820
1N5821
1N5822

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7

1N5820, 1N5821, 1N5822

PACKAGE DIMENSIONS

AXIAL LEAD

CASE 267-05

(DO-201AD)

ISSUE G

D

1

B

K

A

2

K

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.287 0.374 7.30 9.50
B 0.189 0.209 4.80 5.30
D 0.047 0.051 1.20 1.30
K 1.000 --- 25.40 ---

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

MILLIMETERSINCHES

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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8