Datasheet MBRF20100CT Datasheet (ON) [ru]

MBRF20100CT

Preferred Device

SWITCHMODE

Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low–voltage, high–frequency switching power
supplies, free wheeling diodes and polarity protection diodes.

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Matched Dual Die Construction

• High Junction Temperature Capability

• High dv/dt Capability

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guardring for Stress Protection

• Epoxy Meets UL94, V

• Electrically Isolated. No Isolation Hardware Required.

• UL Recognized File #E69369 (Note 1.)

at 1/8″

O

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SCHOTTKY BARRIER

RECTIFIER

20 AMPERES

100 VOLTS

1

2

3

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 1.9 grams (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped 50 units per plastic tube

• Marking: B20100

MAXIMUM RATINGS

Please See the Table on the Following Page

1. UL Recognized mounting method is per Figure 4.

1

2

3

ISOLATED TO–220

CASE 221D

STYLE 3

MARKING DIAGRAM

B20100

B20100= Device Code

ORDERING INFORMATION

 Semiconductor Components Industries, LLC, 2000

October, 2000 – Rev. 2

Device Package Shipping

MBRF20100CT TO–220

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

50 Units/Rail

MBRF20100CT/D

MBRF20100CT

MAXIMUM RATINGS (Per Leg)

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Forward Current

(Rated V

), TC = 133°C Total Device

R

Peak Repetitive Forward Current

(Rated V

, Square Wave, 20 kHz), TC = 133°C

R

Non–repetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) I
Operating Junction and Storage Temperature Range TJ, T
Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs
RMS Isolation Voltage (t = 1.0 second, R.H. ≤ 30%, TA = 25°C) (Note 2.) Per Figure 3.

Per Figure 4. (Note 1.)

Per Figure 5.

THERMAL CHARACTERISTICS (Per Leg)

Maximum Thermal Resistance, Junction to Case R
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds T

ELECTRICAL CHARACTERISTICS (Per Leg)

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (Note 3.)

(i

= 10 Amp, TC = 25°C)

F

(i

= 10 Amp, TC = 125°C)

F

(i

= 20 Amp, TC = 25°C)

F

(i

= 20 Amp, TC = 125°C)

F

Maximum Instantaneous Reverse Current (Note 3.)

(Rated DC Voltage, T

(Rated DC Voltage, T

1. UL Recognized mounting method is per Figure 4.

2. Proper strike and creepage distance must be provided.

3. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%

= 25°C)

C

= 125°C)

C

V

V

I

F(AV)

I

I

RRM

V
V
V

RRM

RWM

V

R

FRM

FSM

iso1
iso2
iso3

θ

JC
L

v

F

i

R

– 65 to +150 °C

stg

4500
3500
1500

100 Volts

10
20

20 Amps

150 Amps

0.5 Amp

3.5 °C/W

260 °C

0.85

0.75

0.95

0.85

0.15
150

Amps

Volts

Volts

mA

50

20

10

5.0

3.0

1.0

0.5

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

i

0

150°C

100°C

T

= 25°C

J

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
v

, INSTANTANEOUS VOLTAGE (VOLTS)

F

Figure 1. Typical Forward Voltage Per Diode

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T

= 150°C

J

10

T

= 125°C

J

T

= 100°C

J

1.0

0.1

, REVERSE CURRENT (mA)

R

I

0.01

T

= 25°C

J

120100806040200

V

, REVERSE VOLTAGE (VOLTS)

R

Figure 2. Typical Reverse Current Per Diode

2

MBRF20100CT

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

CLIP

Figure 3. Clip Mounting Position

for Isolation Test Number 1

* Measurement made between leads and heatsink with all leads shorted together.

FULLY ISOLATED

PACKAGE

CLIP

LEADS

HEATSINK

0.110″ MIN

Figure 4. Clip Mounting Position

FULLY ISOLATED

for Isolation Test Number 2

MOUNTING INFORMATION**

4-40 SCREW

PLAIN WASHER

MOUNTED

PACKAGE

0.107″ MIN

LEADS

HEATSINK

MOUNTED

FULLY ISOLATED

PACKAGE

Figure 5. Screw Mounting Position

for Isolation Test Number 3

CLIP

0.107″ MIN

LEADS

HEATSINK

HEATSINK

COMPRESSION WASHER

NUT

HEATSINK

6a. Screw–Mounted 6b. Clip–Mounted

Figure 6. T ypical Mounting Techniques

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting
technique, a screw torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability. The compression
washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw , without washers, and applying a torque in excess of 20

.

in

lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 i n.lbs without adversely affecting
the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does
not recommend exceeding 10 in.lbs of mounting torque under any mounting conditions.

**For more information about mounting power semiconductors see Application Note AN1040.

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MBRF20100CT

PACKAGE DIMENSIONS

TO–220

FULLPAK

CASE 221D–02

ISSUE D

SEATING

–T–

PLANE

F

–B–

Q

C

S

U

A

123

H

G
N

–Y–

J

R

K

L

D

3 PL

M

M

0.25 (0.010) Y

B

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

0.621 0.629 15.78 15.97

B 0.394 0.402 10.01 10.21
C 0.181 0.189 4.60 4.80
D 0.026 0.034 0.67 0.86
F 0.121 0.129 3.08 3.27
G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
N 0.200 BSC 5.08 BSC
Q 0.126 0.134 3.21 3.40
R 0.107 0.111 2.72 2.81
S 0.096 0.104 2.44 2.64
U 0.259 0.267 6.58 6.78

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

MILLIMETERS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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MBRF20100CT/D