ON MBRF20100CT Schematic [ru]
MBRF20100CT
Preferred Device
SWITCHMODE
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low–voltage, high–frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Epoxy Meets UL94, V
• Electrically Isolated. No Isolation Hardware Required.
• UL Recognized File #E69369 (Note 1.)
at 1/8″
O
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
100 VOLTS
1
2
3
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B20100
MAXIMUM RATINGS
Please See the Table on the Following Page
1. UL Recognized mounting method is per Figure 4.
1
2
3
ISOLATED TO–220
CASE 221D
STYLE 3
MARKING DIAGRAM
B20100
B20100= Device Code
ORDERING INFORMATION
Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 2
Device Package Shipping
MBRF20100CT TO–220
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
50 Units/Rail
MBRF20100CT/D
MBRF20100CT
MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
), TC = 133°C Total Device
R
Peak Repetitive Forward Current
(Rated V
, Square Wave, 20 kHz), TC = 133°C
R
Non–repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) I
Operating Junction and Storage Temperature Range TJ, T
Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs
RMS Isolation Voltage (t = 1.0 second, R.H. ≤ 30%, TA = 25°C) (Note 2.) Per Figure 3.
Per Figure 4. (Note 1.)
Per Figure 5.
THERMAL CHARACTERISTICS (Per Leg)
Maximum Thermal Resistance, Junction to Case R
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds T
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3.)
(i
= 10 Amp, TC = 25°C)
F
(i
= 10 Amp, TC = 125°C)
F
(i
= 20 Amp, TC = 25°C)
F
(i
= 20 Amp, TC = 125°C)
F
Maximum Instantaneous Reverse Current (Note 3.)
(Rated DC Voltage, T
(Rated DC Voltage, T
1. UL Recognized mounting method is per Figure 4.
2. Proper strike and creepage distance must be provided.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
= 25°C)
C
= 125°C)
C
V
V
I
F(AV)
I
I
RRM
V
V
V
RRM
RWM
V
R
FRM
FSM
iso1
iso2
iso3
θ
JC
L
v
F
i
R
– 65 to +150 °C
stg
4500
3500
1500
100 Volts
10
20
20 Amps
150 Amps
0.5 Amp
3.5 °C/W
260 °C
0.85
0.75
0.95
0.85
0.15
150
Amps
Volts
Volts
mA
50
20
10
5.0
3.0
1.0
0.5
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
i
0
150°C
100°C
T
= 25°C
J
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
v
, INSTANTANEOUS VOLTAGE (VOLTS)
F
Figure 1. Typical Forward Voltage Per Diode
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T
= 150°C
J
10
T
= 125°C
J
T
= 100°C
J
1.0
0.1
, REVERSE CURRENT (mA)
R
I
0.01
T
= 25°C
J
120100806040200
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 2. Typical Reverse Current Per Diode
2
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