ON 2N7002L, 2V7002L Schematic [ru]

2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable (2V7002L)
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage V
DrainGate Voltage (RGS = 1.0 MW)
Drain Current
Continuous T
Continuous T
Pulsed (Note 2)
GateSource Voltage
Continuous
Nonrepetitive (t
= 25°C (Note 1)
C
= 100°C (Note 1)
C
50 ms)
p
V
V
DSS
DGR
I I
I
DM
V
GSM
D D
GS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) T Derate above 25°C
Thermal Resistance, JunctiontoAmbient
Total Device Dissipation
(Note 4) Alumina Substrate, T Derate above 25°C
Thermal Resistance, JunctiontoAmbient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
= 25°C
A
= 25°C
A
P
D
R
q
JA
P
D
R
q
JA
stg
60 Vdc
60 Vdc
±115
±75
±800
±20 ±40
225
1.8
556
300
2.4
417
55 to +150
mAdc
Vdc Vpk
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
R
MAX
(BR)DSS
60 V
1
SOT23 CASE 318 STYLE 21
702 = Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DS(on)
7.5 W @ 10 V, 500 mA
NChannel
3
1
2
3
2
1
ID MAXV
115 mA
MARKING DIAGRAM
702 MG
G
ORDERING INFORMATION
Device Package Shipping
2N7002LT1G
2N7002LT3G 10,000 Tape & Reel
2V7002LT1G
2V7002LT3G 10,000 Tape & Reel
2N7002LT1H* 3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
*Not for new design.
SOT23
(PbFree)
SOT23
(PbFree)
3000 Tape & Reel
3000 Tape & Reel
© Semiconductor Components Industries, LLC, 2013
April, 2013 Rev. 7
1 Publication Order Number:
2N7002L/D
2N7002L, 2V7002L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
= 0, ID = 10 mAdc)
(V
GS
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 Vdc) TJ = 125°C
GateBody Leakage Current, Forward
(V
= 20 Vdc)
GS
GateBody Leakage Current, Reverse
(V
= 20 Vdc)
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
= VGS, ID = 250 mAdc)
(V
DS
OnState Drain Current
(V
2.0 V
DS
, VGS = 10 Vdc)
DS(on)
Static DrainSource OnState Voltage
(V
= 10 Vdc, ID = 500 mAdc)
GS
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static DrainSource OnState Resistance
(V
= 10 V, ID = 500 mAdc) TC = 25°C
GS
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
Forward Transconductance
(V
2.0 V
DS
, ID = 200 mAdc)
DS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
= 25 Vdc, VGS = 0, f = 1.0 MHz)
(V
DS
Output Capacitance
(V
= 25 Vdc, VGS = 0, f = 1.0 MHz)
DS
Reverse Transfer Capacitance
(V
= 25 Vdc, VGS = 0, f = 1.0 MHz)
DS
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
TurnOff Delay Time t
(VDD = 25 Vdc, ID ^ 500 mAdc,
= 25 W, RL = 50 W, V
R
G
gen
= 10 V)
BODYDRAIN DIODE RATINGS
Diode Forward On−Voltage
= 11.5 mAdc, VGS = 0 V)
(I
S
Source Current Continuous
(Body Diode)
Source Current Pulsed I
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
I
D(on)
V
DS(on)
r
DS(on)
g
C
C
C
t
d(on)
d(off)
V
I
SM
FS
iss
oss
rss
SD
S
60 Vdc
1.0
500
mAdc
100 nAdc
100 nAdc
1.0 2.5 Vdc
500 mA
Vdc
3.75
0.375
Ohms
7.5
13.5
7.5
13.5
80 mS
50 pF
25 pF
5.0 pF
20 ns
40 ns
1.5 Vdc
11 5 mAdc
800 mAdc
http://onsemi.com
2
2N7002L, 2V7002L
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
0.6
, DRAIN CURRENT (AMPS)
D
I
0.4
0.2
0
V
, DRAIN SOURCE VOLTAGE (VOLTS)
DS
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
4 V 3 V
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Figure 1. Ohmic Region
2.4
2.2 VGS = 10 V
2.0 I
= 200 mA
D
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STATIC DRAIN-SOURCE ON-RESISTANCE
0.6
0.4
DS(on)
r
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140 T, TEMPERATURE (°C)
1.0
VDS = 10 V
0.8
0.6
0.4
, DRAIN CURRENT (AMPS)
D
I
0.2
Figure 2. Transfer Characteristics
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
, THRESHOLD VOLTAGE (NORMALIZED)
0.75
GS(th)
V
0.7
-55°C
V
, GATE SOURCE VOLTAGE (VOLTS)
GS
T, TEMPERATURE (°C)
VDS = V ID = 1.0 mA
25°C
125°C
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
GS
Figure 3. Temperature versus Static
DrainSource OnResistance
Figure 4. Temperature versus Gate
Threshold Voltage
http://onsemi.com
3
2N7002L, 2V7002L
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 21:
PIN 1. GATE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104 0 −−− 10 0 −−− 10q°°°°
2. SOURCE
3. DRAIN
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT
0.95
0.95
0.037
0.9
0.035
0.8
0.031
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
0.037
SCALE 10:1
2.0
0.079
ǒ
inches
mm
Ǔ
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−58171050
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local Sales Representative
2N7002L/D
Loading...