ON 2N7002L, 2V7002L Schematic [ru]
2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
• 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable (2V7002L)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
Drain−Gate Voltage (RGS = 1.0 MW)
Drain Current
− Continuous T
− Continuous T
− Pulsed (Note 2)
Gate−Source Voltage
− Continuous
− Non−repetitive (t
= 25°C (Note 1)
C
= 100°C (Note 1)
C
≤ 50 ms)
p
V
V
DSS
DGR
I
I
I
DM
V
GSM
D
D
GS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
(Note 4) Alumina Substrate, T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
= 25°C
A
= 25°C
A
P
D
R
q
JA
P
D
R
q
JA
stg
60 Vdc
60 Vdc
±115
±75
±800
±20
±40
225
1.8
556
300
2.4
417
−55 to
+150
mAdc
Vdc
Vpk
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
R
MAX
(BR)DSS
60 V
1
SOT−23
CASE 318
STYLE 21
702 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DS(on)
7.5 W @ 10 V,
500 mA
N−Channel
3
1
2
3
2
1
ID MAXV
115 mA
MARKING
DIAGRAM
702 MG
G
ORDERING INFORMATION
Device Package Shipping
2N7002LT1G
2N7002LT3G 10,000 Tape & Reel
2V7002LT1G
2V7002LT3G 10,000 Tape & Reel
2N7002LT1H* 3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3000 Tape & Reel
3000 Tape & Reel
†
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 7
1 Publication Order Number:
2N7002L/D
2N7002L, 2V7002L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
= 0, ID = 10 mAdc)
(V
GS
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 Vdc) TJ = 125°C
Gate−Body Leakage Current, Forward
(V
= 20 Vdc)
GS
Gate−Body Leakage Current, Reverse
(V
= −20 Vdc)
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
= VGS, ID = 250 mAdc)
(V
DS
On−State Drain Current
(V
≥ 2.0 V
DS
, VGS = 10 Vdc)
DS(on)
Static Drain−Source On−State Voltage
(V
= 10 Vdc, ID = 500 mAdc)
GS
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain−Source On−State Resistance
(V
= 10 V, ID = 500 mAdc) TC = 25°C
GS
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
Forward Transconductance
(V
≥ 2.0 V
DS
, ID = 200 mAdc)
DS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
= 25 Vdc, VGS = 0, f = 1.0 MHz)
(V
DS
Output Capacitance
(V
= 25 Vdc, VGS = 0, f = 1.0 MHz)
DS
Reverse Transfer Capacitance
(V
= 25 Vdc, VGS = 0, f = 1.0 MHz)
DS
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Turn−Off Delay Time t
(VDD = 25 Vdc, ID ^ 500 mAdc,
= 25 W, RL = 50 W, V
R
G
gen
= 10 V)
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
= 11.5 mAdc, VGS = 0 V)
(I
S
Source Current Continuous
(Body Diode)
Source Current Pulsed I
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
I
D(on)
V
DS(on)
r
DS(on)
g
C
C
C
t
d(on)
d(off)
V
I
SM
FS
iss
oss
rss
SD
S
60 − − Vdc
−
−
−
−
1.0
500
mAdc
− − 100 nAdc
− − −100 nAdc
1.0 − 2.5 Vdc
500 − − mA
Vdc
−
−
−
−
3.75
0.375
Ohms
−
−
−
−
−
−
−
−
7.5
13.5
7.5
13.5
80 − − mS
− − 50 pF
− − 25 pF
− − 5.0 pF
− − 20 ns
− − 40 ns
− − −1.5 Vdc
− − −11 5 mAdc
− − −800 mAdc
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