ON 2N7002L, 2V7002L Schematic [ru]

2N7002L, 2V7002L

Small Signal MOSFET

60 V, 115 mA, N−Channel SOT−23

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Source Voltage V

Drain−Gate Voltage (RGS = 1.0 MW)

Drain Current

− Continuous T

− Continuous T

− Pulsed (Note 2)

Gate−Source Voltage

− Continuous

− Non−repetitive (t

= 25°C (Note 1)

C

= 100°C (Note 1)

C

≤ 50 ms)

p

V

V

DSS

DGR

I
I

I

DM

V

GSM

D
D

GS

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 3) T
Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation

(Note 4) Alumina Substrate, T
Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. The Power Dissipation of the package may result in a lower continuous drain
current.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

3. FR−5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

= 25°C

A

= 25°C

A

P

D

R

q

JA

P

D

R

q

JA

stg

60 Vdc

60 Vdc

±115

±75

±800

±20
±40

225

1.8

556

300

2.4

417

−55 to
+150

mAdc

Vdc
Vpk

mW

mW/°C

°C/W

mW

mW/°C

°C/W

°C

http://onsemi.com

R

MAX

(BR)DSS

60 V

1

SOT−23
CASE 318
STYLE 21

702 = Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

DS(on)

7.5 W @ 10 V,
500 mA

N−Channel

3

1

2

3

2

1

ID MAXV

115 mA

MARKING
DIAGRAM

702 MG

G

ORDERING INFORMATION

Device Package Shipping

2N7002LT1G

2N7002LT3G 10,000 Tape & Reel

2V7002LT1G

2V7002LT3G 10,000 Tape & Reel

2N7002LT1H* 3000 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

*Not for new design.

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

3000 Tape & Reel

3000 Tape & Reel

†

© Semiconductor Components Industries, LLC, 2013

April, 2013 − Rev. 7

1 Publication Order Number:

2N7002L/D

2N7002L, 2V7002L

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

= 0, ID = 10 mAdc)

(V

GS

Zero Gate Voltage Drain Current TJ = 25°C

(VGS = 0, VDS = 60 Vdc) TJ = 125°C

Gate−Body Leakage Current, Forward

(V

= 20 Vdc)

GS

Gate−Body Leakage Current, Reverse

(V

= −20 Vdc)

GS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

= VGS, ID = 250 mAdc)

(V

DS

On−State Drain Current

(V

≥ 2.0 V

DS

, VGS = 10 Vdc)

DS(on)

Static Drain−Source On−State Voltage

(V

= 10 Vdc, ID = 500 mAdc)

GS

(VGS = 5.0 Vdc, ID = 50 mAdc)

Static Drain−Source On−State Resistance

(V

= 10 V, ID = 500 mAdc) TC = 25°C

GS

TC = 125°C

(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C

TC = 125°C

Forward Transconductance

(V

≥ 2.0 V

DS

, ID = 200 mAdc)

DS(on)

DYNAMIC CHARACTERISTICS

Input Capacitance

= 25 Vdc, VGS = 0, f = 1.0 MHz)

(V

DS

Output Capacitance

(V

= 25 Vdc, VGS = 0, f = 1.0 MHz)

DS

Reverse Transfer Capacitance

(V

= 25 Vdc, VGS = 0, f = 1.0 MHz)

DS

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Turn−Off Delay Time t

(VDD = 25 Vdc, ID ^ 500 mAdc,

= 25 W, RL = 50 W, V

R

G

gen

= 10 V)

BODY−DRAIN DIODE RATINGS

Diode Forward On−Voltage

= 11.5 mAdc, VGS = 0 V)

(I

S

Source Current Continuous

(Body Diode)

Source Current Pulsed I

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSSF

I

GSSR

V

GS(th)

I

D(on)

V

DS(on)

r

DS(on)

g

C

C

C

t

d(on)

d(off)

V

I

SM

FS

iss

oss

rss

SD

S

60 − − Vdc

−

−

−

−

1.0

500

mAdc

− − 100 nAdc

− − −100 nAdc

1.0 − 2.5 Vdc

500 − − mA

Vdc

−

−

−

−

3.75

0.375

Ohms

−

−

−

−

−

−

−

−

7.5

13.5

7.5

13.5

80 − − mS

− − 50 pF

− − 25 pF

− − 5.0 pF

− − 20 ns

− − 40 ns

− − −1.5 Vdc

− − −11 5 mAdc

− − −800 mAdc

http://onsemi.com

2

2N7002L, 2V7002L

TYPICAL ELECTRICAL CHARACTERISTICS

2.0

1.8

TA = 25°C

1.6

1.4

1.2

1.0

0.8

0.6

, DRAIN CURRENT (AMPS)

D

I

0.4

0.2

0

V

, DRAIN SOURCE VOLTAGE (VOLTS)

DS

VGS = 10 V

9 V

8 V

7 V

6 V

5 V

4 V
3 V

100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

Figure 1. Ohmic Region

2.4

2.2
VGS = 10 V

2.0
I

= 200 mA

D

1.8

1.6

1.4

1.2

(NORMALIZED)

1.0

0.8

, STATIC DRAIN-SOURCE ON-RESISTANCE

0.6

0.4

DS(on)

r

-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
T, TEMPERATURE (°C)

1.0

VDS = 10 V

0.8

0.6

0.4

, DRAIN CURRENT (AMPS)

D

I

0.2

Figure 2. Transfer Characteristics

1.2

1.05

1.1

1.10

1.0

0.95

0.9

0.85

0.8

, THRESHOLD VOLTAGE (NORMALIZED)

0.75

GS(th)

V

0.7

-55°C

V

, GATE SOURCE VOLTAGE (VOLTS)

GS

T, TEMPERATURE (°C)

VDS = V
ID = 1.0 mA

25°C

125°C

100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

GS

Figure 3. Temperature versus Static

Drain−Source On−Resistance

Figure 4. Temperature versus Gate

Threshold Voltage

http://onsemi.com

3

2N7002L, 2V7002L

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

D

H

SEE VIEW C

E

c

0.25

3

E

12

b

e

q

A

L

A1

L1

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004

L1

H

E

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104
0 −−− 10 0 −−− 10q°°°°

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT

0.95

0.95

0.037

0.9

0.035

0.8

0.031

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.037

SCALE 10:1

2.0

0.079

ǒ

inches

mm

Ǔ

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: [phone]

Japan Customer Focus Center

Phone: 81−3−5817−1050

http://onsemi.com

4

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local
Sales Representative

2N7002L/D