ON 2N7002K, 2V7002K Schematic [ru]
2N7002K, 2V7002K
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
Features
• ESD Protected
• Low R
• Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Applications
• Low Side Load Switch
• Level Shift Circuits
• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.
DS(on)
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Compliant
http://onsemi.com
R
(BR)DSS
60 V
DS(on)
1.6 W @ 10 V
2.5 W @ 4.5 V
SIMPLIFIED SCHEMATIC
Gate
1
MAX
ID MAXV
380 mA
3
Drain
MAXIMUM RATINGS (T
Rating
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Drain Current (Note 1)
Steady State 1 sq in Pad TA = 25°C
Drain Current (Note 2)
Steady State Minimum Pad T
Power Dissipation
Steady State 1 sq in Pad
Steady State Minimum Pad
Pulsed Drain Current (tp = 10 ms)
Operating Junction and Storage
Temperature Range
Source Current (Body Diode) I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Gate−Source ESD Rating
(HBM, Method 3015)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
= 25°C unless otherwise stated)
J
Symbol Value Unit
DSS
GS
I
D
TA = 85°C
I
= 25°C
A
TA = 85°C
D
P
D
I
DM
TJ, T
STG
S
T
L
ESD 2000 V
60 V
±20 V
380
270
320
230
420
300
1.5 A
−55 to
+150
300 mA
260 °C
mA
mA
mW
°C
Source
2
(Top View)
MARKING DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 21
704 = Specific Device Code*
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depending upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
& PIN ASSIGNMENT
Drain
3
704 MG
G
21
Gate
Source
ORDERING INFORMATION
Device Package Shipping
2N7002KT1G 3000 / Tape & Reel
2V7002KT1G 3000 / Tape & ReelSOT−23
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−23
(Pb−Free)
(Pb−Free)
†
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 10
1 Publication Order Number:
2N7002K/D
2N7002K, 2V7002K
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient − Steady State (Note 3) R
Junction−to−Ambient − t ≤ 5 s (Note 3) 92
Junction−to−Ambient − Steady State (Note 4) 417
Junction−to−Ambient − t ≤ 5 s (Note 4) 154
3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
q
JA
300
°C/W
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
V
(BR)DSS
V
(BR)DSS/TJ
DSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
V
= 60 V
DS
VGS = 0 V,
V
= 50 V
DS
Gate−to−Source Leakage Current I
GSS
VDS = 0 V, VGS = ±20 V ±10
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance R
V
GS(TH)
V
GS(TH)/TJ
DS(on)
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance g
FS
VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
C
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
VGS = 0 V, f = 1 MHz,
V
DS
VGS = 4.5 V, VDS = 10 V;
I
= 200 mA
D
SWITCHING CHARACTERISTICS, VGS = V (Note 6)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
t
d(ON)
r
d(OFF)
f
VGS = 10 V, VDD = 25 V,
I
= 500 mA, RG = 25 W
D
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
VGS = 0 V,
I
= 200 mA
S
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
60 V
71 mV/°C
TJ = 25°C 1 mA
TJ = 125°C 500
TJ = 25°C 100 nA
1.0 2.3 V
4.0 mV/°C
24.5
= 20 V
4.2
2.2
0.7
0.1
0.3
0.1
12.2
9.0
55.8
29
TJ = 25°C 0.8 1.2
TJ = 85°C 0.7
mA
pF
nC
ns
V
http://onsemi.com
2
2N7002K, 2V7002K
TYPICAL CHARACTERISTICS
1.6
1.2
0.8
, DRAIN CURRENT (A)
0.4
D
I
7.0 V
6.0 V
0
VGS = 10 V
9.0 V
8.0 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
3.2
VGS = 4.5 V
2.8
2.4
2.0
1.6
1.2
0.8
TJ = 125°C
TJ = 85°C
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
TJ = 25°C
TJ = −55°C
1.2
0.8
0.4
, DRAIN CURRENT (A)
D
I
6420
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
TJ = 25°C
TJ = 125°C
VGS = 10 V
TJ = −55°C
6420
TJ = 125°C
TJ = 85°C
TJ = 25°C
TJ = −55°C
0.4
, DRAIN−TO−SOURCE RESISTANCE (W)R
0
DS(on)
R
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
2.4
2.0
1.6
1.2
0.8
, DRAIN−TO−SOURCE RESISTANCE (W)
0.4
DS(on)
ID = 500 mA
ID = 200 mA
VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
0.4
, DRAIN−TO−SOURCE RESISTANCE (W)
0
DS(on)
1.21.00.80.60.40.20
R
2.2
1.8
1.4
, DRAIN−TO−SOURCE
1.0
DS(on)
R
RESISTANCE (NORMALIZED)
108642
0.6
, DRAIN CURRENT (A)
I
D
Figure 4. On−Resistance vs. Drain Current and
Temperature
ID = 0.2 A
VGS = 4.5 V
VGS = 10 V
1251007550250−25−50
Figure 6. On−Resistance Variation with
Temperature
1.21.00.80.60.40.20
150
http://onsemi.com
3
Loading...