OMNIREL OMD500, OMD400, OMD100, OMD200 Datasheet
FOUR N-CHANNEL MOSFETS IN HERMETIC
DSG
FET 1
DSG
FET 3
DSG
FET 3
DSG
FET 4
.150
1.520
.260
.625
.125
(10 PLCS)
.187
TYP.
1.000
SQ.
.040 LEAD
DIA.
.500
MIN.
.156 DIA.
TYP.
.050
.270
.170 R.
TYP.
45°
REF
POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
• Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
DS(on)
OMD100
OMD200
OMD400
OMD500
4 11 R2
Supersedes 1 07 R1
MAXIMUM RATINGS PER TRANSISTOR @ 25°C
PART NUMBER V
DS
OMD100 100V .08 25A
OMD200 200V .11 25A
OMD400 400V .35 13A
OMD500 500V .43 11A
R
SCHEMATIC CONNECTION DIAGRAM
3.1 - 1
DS(on)
I
D
3.1
3.1
G
D
S
G
D
S
OMD100 - OMD500
ELECTRICAL CHARACTERISTICS: (T
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
STATIC P/N OMD100 (100V) STATIC P/N OMD200 (200V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown
3.1 - 2
DSS
Voltage I
V
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
I
Gate-Body Leakage Forward 100 nA VGS= +20 V I
GSSF
I
Gate-Body Leakage Reverse - 100 nA VGS= -20 V I
GSSR
I
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
I
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
1
Voltage
Static Drain-Source On-State
Resistance
R
Static Drain-Source On-State
DS(on)
Resistance
1
1
1
100 V
0.2 1.0 mA
35 A VDS 2 V
1.1 1.60 V V
.065 .080 V
.10 .160
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 2700 pF VGS= 0 C
iss
C
Output Capacitance 1300 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 470 pF f = 1 MHz C
rss
t
Turn-On Delay Time 28 ns VDD= 30 V, ID@ 20 A t
d(on)
t
Rise Time 45 ns Rg= 5.0 W, VG= 10V t
r
t
Turn-Off Delay Time 100 ns t
d(off)
t
Fall Time 50 ns t
f
1
9.0 10 S(W ) VDS 2 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t
Reverse Recovery Time 400 ns
rr
1
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
- 40 A
- 160 A
- 2.5 V TC= 25 C, IS= -40 A, VGS= 0 VSDDiode Forward Voltage
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= 0.8 Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
GS
GS
, VGS= 10 V I
DS(on)
= 10 V, ID= 20 A
= 10 V, ID= 20 A
VGS= 10 V, ID= 20 A, R
TC= 125 C Resistance
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER I
the integral P-N I
T
J
dl
F
, ID= 20 A g
DS(on)
= 150 C, IF= IS,
/ds = 100 A/ms dlF/ds = 100 A/ms
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mA
GS(th)
Gate-Body Leakage Forward 100 nA VGS= + 20 V
GSSF
Gate-Body Leakage Reverse -100 nA VGS= - 20 V
GSSR
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
200 V
0.2 1.0 mA
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
t
rr
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
1
Forward Transductance
Input Capacitance 2400 pF VGS= 0
Output Capacitance 600 pF VDS= 25 V
Reverse Transfer Capacitance 250 pF f = 1 MHz
Turn-On Delay Time 25 ns VDD= 75 V, ID@ 16 A
Rise Time 60 ns Rg= 5.0 W,VGS= 10V
Turn-Off Delay Time 85 ns
Fall Time 38 ns
Continuous Source Current
Source Current
Reverse Recovery Time 350 ns
1
30 A VDS 2 V
1.36 1.76 V V
.085 .110 V
0.14 .200
1
10.0 12.5 S(W) VDS 2 V
- 30 A
1
1
- 120 A
- 2 V TC= 25 C, IS= -30 A, VGS= 0
VGS= 0,
VDS= 0.8 Max. Rat., VGS= 0,
, VGS= 10 V
DS(on)
= 10 V, ID= 16 A
GS
= 10 V, ID= 16 A
GS
VGS= 10 V, ID= 16 A,
TC= 125 C
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER
the integral P-N
T
J
, ID= 16 A
DS(on)
= 150 C, IF= IS,
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