OMNIREL JANTXV2N7222, JANTXV2N7218, JANTX2N7222, JANTX2N7219, JANTX2N7218 Datasheet
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3.1 - 1
7 03 R0
100V Thru 500V, Up t o 28A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/596
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
MECHANICAL OUTLINESCHEMATIC
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
123
PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25°C
PART NUMBER V
DS,
V olts R
DS(on)
I
D,
Amps
2N7218 100 .070 28
2N7219 200 .18 18
2N7221 400 .55 10
2N7222 500 .85 8
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222
FEATURES
• Repetitive Avalanche Rating
• Isolated and Hermetically Sealed
• Low R
DS(on)
• Ease of Paralleling
• Ceramic Feedthroughs
• Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I t i s
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
pulse circuits.
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source 100 V VGS= 0V, ID=1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source - ----- 0.077 VGS= 10 V, ID= 20 A
3
On-State Resistance ------ 0.125 VGS= 10 V, ID= 28 A
3
V
GS(th)
Gate Threshold Voltage 2. 0 --- 4.0 V V
DS
= VGS, ID= 250 µA
I
DSS
Zero Gate Voltage Drain ------ 25
µA
VDS= 80 V, VGS= 0V
Current ------ 250 V
DS
= 80 V, VGS= 0V, TJ= 125°C
I
GSS
Gate -to-Source Leakage Forward ------ 100 nA VGS= 20 V
I
GSS
Gate -to-Source Leakage Reverse ------ -100 nA VGS= -20 V
Q
G(on)
On-state Gate Charge ------59nCVGS= 10 V, ID= 28A
Q
GS
Gate-to-Source Charge ------16nCVDS= 50 V
Q
Gd
Gate-to-Drain (“Miller”) Charge - ----- 30.7 n C See note 4
t
D(on)
Turn-On Delay Time ------21nsVDD= 50 V, ID= 20A, RG =9.1
t
r
Rise Time ------ 105 n s See note 4
t
D(off)
Turn-Off Delay Time ------64ns
t
r
Fall Time - -----65ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
V
SD
Diode Forward Voltage ------ 1.5 V TJ= 25°C, IS= 28A 3, VGS= 0 V
t
trr
Reverse Recovery Time ------ 400 ns TJ= 25°C, IF= 28A,d i/dt<100A/µs
3
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
Junction-to-Case ------ 1.0 Mounting surface flat,
R
thCS
Case-to-sink --- 0.21 - -- °C/W smooth, and greased
R
thJA
Junction-to-Ambient - ----- 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
DD
= 25V, Starting TJ= 25°C, L > 480 µH, RG = 25 , Peak IL = 28A
3. Pulse width <
300 µs; Duty Cycle < 2%
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N7218 Units
ID @ V
GS
= 10V, TC= 25°C Continuous Drain Current 28 A
ID @ V
GS
= 10V, TC= 100°C Continuous Drain Current 20 A
I
DM
Pulsed Drain Current
1
112 A
PD@ TC= 25°C Maximum Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
V
GS
Gate-Source Voltage ± 2 0 V
E
AS
Single Pulse Avalanche Energy
2
250
4
mJ
I
AR
Avalanche Current
1
28
4
A
E
AR
Repetitive Avalanche Energy
1
12.5
4
mJ
T
J Operating Junction
-55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222
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