OM11N60SA
OM11N55SA
POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE
600V & 550V, 11 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•Isolated Hermetic Metal Package
•Fast Switching
•Low RDS(on)
•Available Screened To MIL-S-19500, TX, TXV And S
•Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operation). They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER |
VDS |
RDS(on) |
ID(MAX) |
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3.1 |
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OM11N60 |
600V |
.50 |
11A |
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OM11N55 |
550V |
.44 |
11A |
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SCHEMATIC
DRAIN
GATE
SOURCE |
4 11 R1 |
3.1 - 19 |
Supersedes 2 04 R0 |
20 - 1.3
1.3
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM11N60SA
Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
600 |
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V |
VGS = 0, |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VDS = VGS, ID = 250 mA |
IGSS |
Gate-Body Leakage |
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± 100 |
nA |
VGS = ± 20 V |
IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
mA |
VDS = Max. Rat., VGS = 0 |
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Current |
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0.2 |
1.0 |
mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
11.0 |
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A |
VDS > ID(on) x RDS(on), VGS = 10 V |
VDS(on) |
Static Drain-Source On-State |
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3.1 |
V |
VGS = 10 V, ID = 5.5 A |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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.47 |
.50 |
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VGS = 10 V, ID = 5.5 A |
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Resistance1 |
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RDS(on) |
Static Drain-Source On-State |
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1.0 |
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VGS = 10 V, ID = 5.5 A, |
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Resistance1 |
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TC = 125 C |
DYNAMIC
gfs |
Forward Transductance1 |
5.0 |
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S)(W() |
VDS 2 VDS(on), ID = 5.5 A |
Ciss |
Input Capacitance |
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3000 |
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pF |
VGS = 0 |
Coss |
Output Capacitance |
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440 |
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pF |
VDS = 25 V |
Crss |
Reverse Transfer Capacitance |
|
220 |
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pF |
f = 1 MHz |
Td(on) |
Turn-On Delay Time |
|
55 |
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ns |
VDD = 210 V, ID @ 7.0 A |
tr |
Rise Time |
|
75 |
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ns |
Rg = 5 W , RL = 30 W |
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(MOSFET) switching times are |
Td(off) |
Turn-Off Delay Time |
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225 |
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ns |
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essentially independent of |
tf |
Fall Time |
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135 |
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ns |
operating temperature. |
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BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM11N55SA
Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
550 |
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V |
VGS = 0, |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VDS = VGS, ID = 250 mA |
IGSSF |
Gate-Body Leakage Forward |
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±100 |
nA |
VGS = ± 20 V |
IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
mA |
VDS = Max. Rat., VGS = 0 |
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Current |
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0.2 |
1.0 |
mA |
VDS = 0.8 Max. Rat., VGS = 0, |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
11.0 |
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A |
VDS > ID(on) x RDS(on), VGS = 10 V |
VDS(on) |
Static Drain-Source On-State |
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3.3 |
V |
VGS = 10 V, ID = 5.5 A |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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.37 |
.44 |
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VGS = 10 V, ID = 5.5 A |
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Resistance1 |
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RDS(on) |
Static Drain-Source On-State |
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.88 |
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VGS = 10 V, ID = 5.5 A, |
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Resistance1 |
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TC = 125 C |
DYNAMIC
gfs |
Forward Transductance1 |
5.0 |
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S)(W() |
VDS 2 VDS(on), ID = 5.5 A |
Ciss |
Input Capacitance |
|
3000 |
|
pF |
VGS = 0 |
Coss |
Output Capacitance |
|
440 |
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pF |
VDS = 25 V |
Crss |
Reverse Transfer Capacitance |
|
220 |
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pF |
f = 1 MHz |
Td(on) |
Turn-On Delay Time |
|
55 |
|
ns |
VDD = 210 V, ID @ 7.0 A |
tr |
Rise Time |
|
75 |
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ns |
Rg = 5 W , RL = 30 W |
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(MOSFET) switching times are |
Td(off) |
Turn-Off Delay Time |
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225 |
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ns |
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essentially independent of |
tf |
Fall Time |
|
135 |
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ns |
operating temperature. |
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BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS |
Continuous Source Current |
|
- 11 |
A |
Modified MOSPOWER |
D |
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IS |
Continuous Source Current |
- 11 |
A |
Modified MOSPOWER |
D |
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(Body Diode) |
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symbol showing |
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(Body Diode) |
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symbol showing |
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ISM |
Source Current1 |
|
- 52 |
A |
the integral P-N |
G |
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ISM |
Source Current1 |
- 52 |
A |
the integral P-N |
G |
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(Body Diode) |
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Junction rectifier. |
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S |
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(Body Diode) |
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Junction rectifier. |
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S |
VSD |
Diode Forward Voltage1 |
|
- 1.4 |
V |
TC = 25 C, IS = -11 A, VGS = 0 |
VSD |
Diode Forward Voltage1 |
- 1.4 |
V |
TC = 25 C, IS = -11 A, VGS = 0 |
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trr |
Reverse Recovery Time |
700 |
ns |
TJ = 150 C,IF = IS, |
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trr |
Reverse Recovery Time |
700 |
ns |
TJ = 150 C,IF = IS, |
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dlF/ds = 100 A/ms |
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dlF/ds = 100 A/ms |
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1 Pulse Test: Pulse Width 300msec, Duty Cycle |
2%. |
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1 Pulse Test: Pulse Width |
300msec, Duty Cycle 2%. |
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OM11N55SA - OM11N60SA
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