OMNIREL JANTXV2N6802, JANTXV2N6796, JANTX2N6796, JANTX2N6802, JANTX2N6800 Datasheet
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2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800
2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802
JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,
QUALIFIED TO MIL-PRF-19500/557
100 V, 200 V, 400 V & 500 V, N-Channel,
Enhancement Mode MOSFET Power Transistor
FEATURES
• Low R
DS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/557
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for
Military requirements where small size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25°C
PART NUMBER V
2N6796 100 .18 8.0
2N6798 200 .40 5.5
2N6800 400 1.00 3.0
2N6802 500 1.50 2.5
V olts R
DS,
I
DS(on)
Amps
D,
MECHANICAL OUTLINESCHEMATIC
Pin Connection
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
(Case)
7 03 R0
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800
2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
Parameter JANTXV, JANTX, 2N6796 Units
ID @ V
ID @ V
I
= 10V, TC= 25°C Continuous Drain Current 8 .0 A
GS
= 10V, TC= 100°C Continuous Drain Current 5 .0 A
DM
GS
Pulsed Drain Current
1
PD@ TC= 25°C Maximum Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
V
GS
E
AS
J Operating Junction
T
Gate-Source Voltage ± 2 0 V
Single Pulse Avalanche Energy
2
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
Drain-Source 100 V VGS= 0V, ID=1.0 mA,
BV
DSS
Breakdown Voltage
R
Static Drain-to-Source - ----- .18 VGS= 10 V, ID= 5.0 A
DS(on)
On-State Resistance ------ .195 VGS= 10 V, ID= 8.0 A
V
Gate Threshold Voltage 2. 0 --- 4.0 V V
GS(th)
I
Zero Gate Voltage Drain ------ 25
DSS
Current ------ 250 V
I
Gate -to-Source Leakage Forward ------ 100 nA VGS= 20 V
GSS
I
Gate -to-Source Leakage Reverse ------ -100 nA VGS= -20 V
GSS
Q
On-state Gate Charge ------ 28.5 n C VGS= 10 V, ID= 8A
G(on)
Q
Gate-to-Source Charge ------ 6.3 n C VDS= 50 V
GS
Q
Gate-to-Drain (“Miller”) Charge - ----- 16.6 n C See note 4
Gd
t
Turn-On Delay Time ------30nsVDD= 30 V, ID= 5.0 A, RG =7.5
D(on)
t
Rise Time ------ 75 ns See note 4
r
t
Turn-Off Delay Time ------40ns
D(off)
t
Fall Time - -----45ns
r
µA
32 A
4
4.3
mJ
-55 to 150 °C
3
3
= VGS, ID= 250 µA
DS
VDS= 80 V, VGS= 0V
= 80 V, VGS= 0V, TJ= 125°C
DS
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Diode Forward Voltage ------ 1.5 V TJ= 25°C, IS= 8.0A 3, VGS= 0 V
V
SD
t
Reverse Recovery Time ------ 300 n s TJ= 25°C, IF= 8.0 A, d i/dt < 100 A/µs
trr
3
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
Junction-to-Case ------ 5.0 Mounting surface flat,
R
thJC
R
Case-to-sink --- 0.21 - -- °C/W smooth, and greased
thCS
R
Junction-to-Ambient ------ 175 Typical socket mount
thJA
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
3. Pulse width <
= 25 V, Starting TJ= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 8.0 A
DD
300 µs; Duty Cycle < 2%
4. See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
3
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