OKI MSM5416258B-28JS, MSM5416258B-30JS, MSM5416258B-35JS Datasheet

FEATURES

• 262,144-word by 16-bit configuration

• Single 5V power supply, ±10% tolerance

• Input :TTL compatible

• Output :TTL compatible, 3-state

• Refresh : 512 cycles/8ms

• Fast page mode with EDO,read modify write capability

• Byte wide control: 2 CAS control

• CAS before RAS refresh, Hidden refresh, RAS only refresh capability

• Package : 40-Pin 400 mil plastic SOJ (SOJ40-P-400) (Product : MSM5416258B-xxJS) xx : indicates speed rank.

DESCRIPTION

OKI Semiconductor

MSM5416258B

262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

PIN CONFIGURATION ( TOP VIEW )

The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power consumption due to quadruple polysilicon double metal CMOS. The MSM5416258B is available in a 40-pin plastic SOJ.

PRODUCT FAMILY

Family

Access Time (Max.)

Cycle Time (Min.)

Power Dissipation

tRAC

tAA tRC tHPC

MSM5416258B-30

30ns 16ns 55ns 13ns

1458mW

REVISION-2 1997.11.10, specification are subject to change without advanced notice.

Vcc DQ0 DQ1 DQ2 DQ3

Vcc DQ4 DQ5 DQ6 DQ7

NC NC

WE

RAS

NC

A0 A1 A2 A3

Vcc

Vss DQ15 DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ9 DQ8 NC LCAS UCAS OE A8 A7 A6 A5 A4 Vss

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21

40Pin 400mil SOJ

OE

Row Address Strobe

Data-Input/ Data-Output

DQ0-15

LCAS,UCAS

WE

Column Address Strobe

Output Enable

Pin Names

Function

A0-A8 RAS

Vcc Vss

NC

Address Input

Write Enable

Power Supply ( +5V )

Ground ( 0V )

No Connection

tCAC

9ns

tOEA

9ns

Note1 : The same power supply voltage must be

provided to every Vcc pin, and the same GND voltage level must beprovideded to every Vss pin.

MSM5416258B-35

35ns 19ns 60ns 13ns

1430mW10ns

10ns

MSM5416258B-28

Technical Information

28ns

1485mW

15ns 48ns 12ns

9ns

Input Pin

RAS LCAS

WE

OE

H

*

L L L

L L

L

H

L

H

L

H H

L

H

L

*

H

*

**

*

DQPin

DQ0~DQ7 DQ8~DQ15

High-Z High-Z High-Z

High-Z

DOUT

DIN DIN

Don`t Care

High-Z High-Z

Functinal Mode

Standby Refresh

Word Read

Word Write

DIN

Don`t Care

Lower Byte Write Upper Byte Write

H

L L

H H

FUNCTION TABLE

BLOCK DIAGRAM

Timing Generater

Column Address Buffer

Internal Address Counter

Row Address Buffer

Refresh Control Clock

Row Decoders

Word Drivers

Memory cells

Sence amplifier

Column Decoders

I/O Controller

I/O Selector

Output Buffers

Input Buffers

Output Buffers

9

16

8

On Chip VBB Generater

OE

RAS

UCAS

A0~A8

Vcc

Vss

DQ0~DQ7

DQ8~DQ15

8

16

WE

LCAS

UCAS

L

L L

L H

H H

H

High-Z

DIN

DOUT

High-Z

DOUT

Lower Byte Read Upper Byte Read

-

Rating

Voltage on any pin relative to Vss

Short circuit output current

Power dissipation

Operrating temperrature

Storage temperature

Conditions

Ta=25°C -1.0 ~ +7.0

1.5

50

0 ~ +70

-55 ~ +150

Unit

mA

W

°C

V

Symbol

Vt Ios PD

Topr Tstg

Ta=25°C Ta=25°C

Value

°C

Parameter

Supply voltage

Input high voltage

Input low voltage

Conditions

4.5

2.4

0

-1.0

Unit

V

Symbol

Vcc

Min.

Vss VIH VIL

Typ. Max.

5.005.5

6.5

0

0.8

V V V

Parameter

Input capacitance (A0~A8) Input capacitance (RAS,LCAS,UCAS,WE,OE) Input / output capacitance (DQ0~DQ15)

Conditions

Unit

pf

Symbol

CI/0

CIN2

Typ. Max.

8

9

8

CIN1

pf pf

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Recommended Operating Conditions

Capacitance

(Ta=0°Cto 70°C)

(Vcc=5V±10%,Ta=25°C,f=1MHz)

DC CHARACTERISTICS

Parameter

Symbol Condition

Output High Voltage Output Low Voltage

Input Leakage Current

Output Leakage Current

0V≤VIN≤Vcc DQi Disable

0V≤Vo≤5.5V

RAS,CAS Cycling

tRC=Min.

Average Power Supply Current (Operating)

Power Supply Current (Standby)

RAS,CAS = VIH

RAS=Cycling CAS=VIH

tRC=Min.

Average Power Supply Current (RAS only Refresh)

Average Power Supply Current (CAS Before RAS Refresh)

RAS=Cycling CAS Befor RAS

Average Power Supply Current (Fast Page Mode)

RAS=VIL CASCycling

tHPC=Min.

IOH= - 1.0mA IOL= 2.0mA

VOH VOL

ILI ILO

ICC1

ICC2

ICC3

ICC5

ICC4

Note

MSM5416258B

-35

Min. Max.

MSM5416258B

-30

Min. Max.

2.4 Vcc

0 0.4

-10 10 10-10

265

-

-3

265

-

265-

2.4 Vcc 0 0.4

-10 10 10-10

260

-

-3

260

-

260-

Unit

V V

µA

mA

1,2

(Vcc=5V±10%, Ta=0 to 70°C)

1

1,2

1,3

1,2

Notes : 1. Icc Max. is specified as Icc for the output open cindition.

2. Address can be changed once or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

MSM5416258B

-28

Min.

Max.

2.4

Vcc

0

0.4

-10

10 10

-10

-

-3

-

270

265

260

270

Parameter

Random read or write cycle time

Read/Write cycle time

Access time from column address

Access time from OE

MIN

Symbol

tRC

MAX

(Vcc =5V±10%, Ta =0~70°C)

MSM5416258B

-30

Access time from RAS

Hyper page mode cycle time Fast page mode read/write cycle time

Access time from CAS

Access time from CAS precharge

Output buffer turn-off delay time OE to data output buffer turn-off

delay time

Transition time Refresh preiod RAS precharge time RAS pulse width RAS pulse width (Fast page mode) RAS hold time RAS hold time reference to OE CAS precharge time CAS pulse width CAS hold time CAS to RAS precharge time RAS to CAS delay time RAS to column address delay time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold time from RAS Column address to RAS lead time

Read command set-up time Read command hold time Read command hold time

reference to RAS

tRMW tHPC tPRMW tRAC tCAC tAA tOEA tCPA

tOFF tOEZ

tT tREF tRP tRAS tRASP tRSH tROH tCP tCAS tCSH tCRP tRCD tRAD tASR tRAH tASC tCAH tAR tRAL

tRCS tRCH

tRRH

tCOH

Data hold after CAS low

AC CHARACTERISTICS (1/2)

RAS to data output buffer turn-off delay time

WE to data output buffer turn-off delay time

tREZ

tWEZ

WE pulse width

tWEP

Unit Note

ns ns ns ns ns ns ns ns ns

ns ns

ns ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns

ns ns

ns

7,12,13

7,12 7,13

7,12

17

8 8

8

12

13

9

ns

75

35

55

13

18 30 30

7 7 4 5

25

11

8

6

22 18

30

9

16

9

18

10,000

100,000

10,000

22 15

MIN MAX

MSM5416258B

-35

85

45

60

13

3 3

2

20 35 35

4 5

30

5

13 10

0

7

0

5

25 20

0 0

0

35 10 19 10 21

8 8

35

10,000

100,000

10,000

26 16

8

3

8

3

8

10

MIN MAX

MSM5416258B

3 3

2

8 8

5

0

5

0 0

0

8 8

35

10,000

100,000

10,000

8

3

8

3

8

10

-28

70

34

48

12

28

9

15

9

17

3

7

3

2

7

35

3

7

3

7

17

8

28 28

7 7 4 5

22

10

8

6

21 15

19 13

5

0

5

0 0

0

10

Parameter

Write command set-up time Write command hold time

Write command to RAS lead time

Data to CAS delay time

MIN

Symbol

tWCS

MAX

(Vcc=5V±10%, Ta=0~70°C)

MSM5416258B

-28

Write command pulse width

OE command hold time Write command to CAS lead time

Data-in hold time

CAS to WE delay time Column address to WE delay time

CAS active delay time from RAS precharge

RAS to CAS set-up time (CAS before RAS)

RAS to CAS hold time (CAS before RAS)

tWCH tWP

tOEH tCWL tRWL tDZC

tDH

tCWD

tRWD tRPC

tCSR

tCHR

Write command hold time from RAS

RAS to WE delay time

tWCR

tAWD

Data to OE delay time

tDZO

Data-in set-up time

tDS

tDHR

Data-in hold time referenced to RAS

AC CHARACTERISTICS (2/2)

OE "L" to CAS "H" lead time CAS "H" to OE "L" lead time

Hi-Z command pulse width

tOCH tCHO tOEP

OE to Data-in delay time

tOED

Unit Note

ns ns ns ns ns ns ns ns

ns

ns ns ns

ns

ns ns

ns

10 10

11 11 11

ns ns ns

ns

MIN MAX

MSM5416258B

-30

5

22

0

5 5 7

0

18

5

27 40

0

6

5

0 0

22

5

6

7

MIN MAX

MSM5416258B

-35

6

26

0

6 6 8

0

20

6

30 45

0

8

6

0 0

26

8 8 8

8

5

6

5

21

0

5 5 7

0

5

18

5

24

0 0

21

5

7

5

37

0

5

6