OKI MSM5117805D-60TS-L, MSM5117805D-70JS, MSM5117805D-70TS-K, MSM5117805D-70TS-L, MSM5117805D-60JS Datasheet

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Semiconductor

M SM5117805D

2,097,152-Word

´´´´

8-Bit DYNA MIC RAM : FAST PAGE MODE TY PE WITH EDO

DESCRIPTION

The MSM5117805D is a 2,097,152-word ´ 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM5117805D achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM5117805D is available in a 28-pin plastic SOJ, 28-pin plastic TSOP.

FEATURES

·

2,097,152-word ´ 8-bit configuration

·

Single 5V power supply, ±10% tolerance

·

Input : TTL compatible, low input capacitance

· Output : TTL compatible, 3-state

· Refresh : 2048 cycles/32 ms

· Fast page mode, read modify write capability

·

CAS before RAS refresh, hidden refresh, RAS-only refresh capability

· Multi-bit test mode capability

· Package options:

28-pin 400mil plastic SOJ (SOJ28-P-400-1.27) (Product : MSM5117805D-xxJS)
28-pin 400mil plastic TSOP (TSOPII28-P-400-1.27-K) (Product : MSM5117805D-xxTS-K)

(TSOPII28-P-400-1.27-L) (Product : MSM5117805D-xxTS-L)

xx : indicates speed rank.

PRODUCT FAMILY

Access Time (Max.) Power Dissipation

Family

t

RAC

t

AA

t

CAC

t

OEA

Cycle Time

(Min.)

Operating (Max.) Standby (Max.)

MSM5117805D-50 50ns 25ns 13ns 13ns 84ns 550mW
MSM5117805D-60 60ns 30ns 15ns 15ns 104ns 495mW
MSM5117805D-70 70ns 35ns 20ns 20ns 124ns 440mW

5.5mW

This version:Apr.1999

MSM5117805D

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PIN CONFIGRATION (TOP VIEW)

Pin Name Function

A0 – A9, A10R Address Input

RAS Row Address Strobe
CAS Column Address Strobe

DQ1 – DQ8 Data Input/Data Output

OE Output Enable
WE Write Enable
V

CC

Power Supply (5V)

V

SS

Ground (0V)

NC No Connection

Note : The same power supply voltag e m ust be prov ided to ev ery VCC pin, and the same

GND voltage level must be provided to every V

SS

pin.

28-Pin Plastic SOJ

28-Pin Plastic TSOP

(L T

y

pe)

28-Pin Plastic TSOP

(K T

y

pe)

1
2
3
4
5
6
7

9
10
11
12
13

26
25
24
23
22
21

19
18
17
16
15

27DQ1

DQ2

V

CC

V

CC

V

SS

V

SS

DQ6

A8
A7
A6

A10R

A1
A2
A3

WE

RAS

NC

DQ3

A5
A4

OE

DQ8
DQ7

CAS

8

DQ4

20

A9

14

A0

DQ5

281
2
3
4
5
6
7

9

10
11
12
13

26
25
24
23
22
21

19
18
17
16
15

27DQ1

DQ2

V

CC

V

CC

V

SS

V

SS

DQ6

A8
A7
A6

A10R

A1
A2
A3

WE

RAS

NC

DQ3

A5
A4

OE

DQ8
DQ7

CAS

8

DQ4

20

A9

14

A0

DQ5

28

1
2
3
4
5
6

8

9
10
11
12
13

28
27
26

23
22
21

19
18
17
16
15

20

DQ1
DQ2

V

CC

V

CC

V

SS

V

SS

DQ8
DQ7

A9
A8
A7
A6

A0
A1
A2
A3

WE
RAS
NC
A10R

A5
A4

CAS

OE

7

DQ4

14

DQ3

25
24

DQ6
DQ5

MSM5117805D

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BLOCK DIAGRAM

A

0 – A9

8

8

8

10

11

10

Timing

Generator

Column
Address

Buffers

Internal
Address
Counter

Row

Address

Buffers

Refresh

Control Clock

Column Decoders

Sense Amplifiers

Memory

Cells

Word

Drivers

Row

Deco-

ders

I/O

Selector

Input

Buffers

Output
Buffers

DQ1 – DQ

8

OE

WE

RAS

CAS

VCCV

SS

On Chip

V

BB

Generator

I/O

Controller

On Chip

IV

CC

Generator

8

8

8

10

A10R

1

MSM5117805D

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ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Voltage on Any Pin Relative to V

SS

VIN, V

OUT

-

0.5 to V

CC

+ 0.5

V

Voltage VCC supply Relative to V

SS

V

CC

0.5 to 7.0 V

Short Circuit Output Current

I

OS

50 mA

Power Dissipation

P

D*

1W

Operating Temperature

T

opr

0 to 70 °C

Storage Temperature

T

stg

-

55 to 150

°C

*: Ta = 25°C

Recommended Operating Conditions

(Ta = 0°C to 70°C)

Parameter Symbol Min. Typ. Max. Unit

V

CC

4.5 5.0 5.5 V

Power Supply Voltage

V

SS

000V

Input High Voltage

V

IH

2.4

¾

V

CC

+

0.5

*1

V

Input Low Voltage

V

IL

-

0.5

*2

¾

0.8 V

Notes: *1. The input voltage is VCC + 2.0V when the pulse width is less than 20ns (the pulse width is with

respect to the point at which V

CC

is applied).

*2. The input voltage is V

SS

- 2.0V when the pulse width is less than 20ns (the pulse width respect to

the point at which V

SS

is applied).

Capacitance

(VCC = 5V ± 10%, Ta = 25°C, f=1MHz )

Parameter Symbol Typ. Max. Unit

Input Capacitance (A0 – A9, A10R)

C

IN1

¾

5pF

Input Capacitance
(RAS, CAS, WE, OE)

C

IN2

¾

7pF

Output Capacitance (DQ1 – DQ8)

C

I/O

¾

7pF

MSM5117805D

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DC Characteristics

(VCC = 5V ± 10%, Ta = 0°C to 70°C)

MSM5117805

D-50

MSM5117805

D-60

MSM5117805

D-70

Parameter

Symbol

Condition

Min.

Max

Min.

Max

Min.

Max

Unit Note

Output High Voltage

V

OH

IOH = -5.0mA

2.4 V

CC

2.4 V

CC

2.4 V

CC

V

Output Low Voltage

V

OLIOL

= 4.2mA

00.400.400.4V

Input Leakage
Current

I

LI

0V £ VI £ 6.5V ;
All other pins not

under test = 0V

-

10

10

-

10

10

-

10

10

m

A

Output Leakage
Current

I

LO

DQ disable
0V £ V

O

£ V

CC

-

10

10

-

10

10

-

10

10

m

A

Average Power
Supply Current

(Operating)

I

CC1

RAS, CAS cycling,
t

RC

= Min.

¾

100

¾

90

¾

80 mA 1,2

RAS, CAS = V

IH

¾

2

¾

2

¾

2

Power Supply
Current

(Standby)

I

CC2

RAS, CAS

³

V

CC

– 0.2V

¾

1

¾

1

¾

1

mA 1

Average Power
Supply Current

(RAS-only Refresh)

I

CC3

RAS cycling,
CAS = V

IH

,

t

RC

= Min.

¾

100

¾

90

¾

80 mA 1,2

Power Supply
Current

(Standby)

I

CC5

RAS = VIH,
CAS = V

IL

,

DQ = enable

¾

5

¾

5

¾

5mA1

Average Power
Supply Current

(CAS before RAS
Refresh)

I

CC6

RAS = cycling,
CAS before RAS

¾

100

¾

90

¾

80 mA 1,2

Average Power
Supply Current

(Fast Page Mode)

I

CC7

RAS = VIL,
CAS cycling,

t

PC

= Min.

¾

100

¾

90

¾

80 mA 1,3

Notes: 1. ICC Max. is specified as ICC for output open condition.

2. The address can be changed once or less while RAS = V

IL

.

3. The address can be changed once or less while CAS = V

IH

.