OKI MS52C1161A Technical data
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MS52C1161A
131,072-Word X 8-Bit STATIC RAM +
2,097,152-Word X 8-Bit One Time PROM
DESCRIPTION
The MS52C1161A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and
2,097,152-word by 8-bit electrically switchable 16Mb One Time PROM featuring 2.7V to 3.6V
power supply operation and direct LVTTL input / output compatibility. Since the circuitry is
completely static,external clocks are unnecessary,making this device very easy to use.
The MS52C1161A is packaged in 48-pin plastic TSOP and 48-pin FBGA (9mmx13mm) ,suited
for use in handy terminal and other application which required small space.
FEATURES
• 131,072-word x 8-bit configuration SRAM and 2,097,152-word x 8-bit configuration OTP
• Power supply voltage : 2.7 to 3.6V
Semiconductor
Preliminary
1998.6
• Fully static operation
• Operating temperature range : Ta= -20 to 70°C
• Access time : 100nS MAX (Vcc=2.7V)
80nS MAX (Vcc=3.0V)
• Common address inputs and data inputs / outputs for SRAM and OTP
• Input / Output LVTTL compatible
• 3-state output
• Data retention available at power supply voltage 1.5V for SRAM
• Package options :
48-pin plastic TSOP (Type II) (TSOP48-P-550-0.8) (Product : MS52C1161ATA)
48-pin plastic FBGA (FBGA48-P-0913-0.8) (Product : MS52C1161ALA)
1
MS52C1161A
PIN CONFIGURATION (TOP VIEW)
NC
A17
A15
A14
A13
A12
A11
A10
A9
CEs
VPP
GND
WE
A8
A7
A6
10
11
12
13
14
15
16
17
1
2
3
4
5
6
7
8
9
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
NC
A18
CEo
A16
I/O7
NC
I/O6
NC
I/O5
NC
I/O4
GNDVCC
VCC
NC
I/O3
NC
I/O2
A5
A4
A3
A2
A1
A0
18
19
20
21
22
23
24
48-pin TSOP (II)
31
30
29
28
27
26
25
NC
I/O1
NC
I/O0
OE
A19
A20NC
2
MS52C1161A
PIN CONFIGURATION (TOP VIEW)
A
6
5
4
3
2
1
A1
A0
A20
A19
OE CEo
BCDEFGH
A4
A3
A2
I/O0 I/O3 NC
NC
I/O1
A7
A5
NC
I/O2
NC
GND
WE
A8NC
NC
VCC GND
VCC
VPP
CEs
NC
I/O4
A9
A10A6
A11
I/O6
NC
I/O5
A12
A13
A14
A16
I/O7
NC
A15
A17
NC
A18
48-pin FBGA
Pin Name Function
A0 - A16
A17 - A20
CEs
CEo
WE
OE
I/O0 - I/O7
VCC
VPP
GND
NC
Common Address Inputs
Address Inputs for OTP
Chip Enable for SRAM
Chip Enable for OTP
Write Enable for SRAM
Common Output Enable
Common Data Inputs / Outputs
Common Power Supply
Program Power Supply for OTP
Common Ground
No Connection
3
MS52C1161A
BLOCK DIAGRAM
A0
A1
A2
A3
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
A17
A18
A19
A20
CEo
CEs
WE
OE
Address Buffer
Control
SRAM
Memory
Row Decoder
Array
128kw x 8b
Column Decoder
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7
Row Decoder
Column Decoder
Output Buffer
VCC
VPP
GND
OTP
Memory
Array
2Mw x 8b
MultiplexerMultiplexer
FUNCTION TABLE
Operating Mode
Standby
SRAM Read
SRAM Write
OTP Read
OTP Program Inhibit
OTP Program Verify
Note : 1. * = Don't Care ("H" or "L")
2. It is forbidden to apply CEo="L" and CEs="L" simultaneously.
CEo WE OE
CEs
H
H
H
H
H
LHH
L
L
LH
L
L
H
H
HOTP Program
H
HH
*
H
*
L
*
*
*
*
*
*
H
LD
H
H
L
VPP VCC I/O0 to I/O7
*
*
*
*
2.7V
to
3.6V
*
*
High-Z
High-Z
D
OUT
DINL
High-Z
OUT
DIN
9.75V
4.0V
High-Z
OUT
D
4
MS52C1161A
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
VCC
VPP
I
V
VO
PD
Topr
Tstg
Respect to GND
* -1.2VMin. for pulse width less than 30nS.
Recommended Operating Conditions
VCC
Power Supply Voltage
V
PP
GND
SRAM
Data Retention Voltage
Input High Voltage
Input Low Voltage
V
CCH
VIH
VIL
Vcc=2.7 to 3.6
Ta=25°C
Rating
-0.5 to 5.0
-0.5 to 11.5
-0.5* to Vcc+0.5
-0.5* to Vcc+0.5
0.7
-20 to 70
-55 to 125
(Ta= -20 to 70
Min. Max.Typ.
2.7 3.6
-0.5 Vcc+0.5
000
1.5 3.6
2.2
Vcc+0.5
-0.5* 0.4
UnitConditionSymbolParameter
V
V
V
V
W
°C
°C
°C)
UnitConditionSymbolParameter
V
V
V
V
V
V
* -1.2VMin. for pulse width less than 30nS.
Capacitance
Min. Max.Typ.
I=0V
Input Capacitance
Input/Output Capacitance
Note : This parameter is periodically sampled and not 100% tested.
IN
C
CI/O
V
VO=0V
(Vcc=3.3V , Ta=25°C , f=1MHz)
UnitConditionSymbolParameter
10
pF
10 pF
5
MS52C1161A
DC Characteristics (1)
Parameter Symbol Unit
Input Leakage
Current
ILI
VIN=0 to VCC
CE
Output Leakage
Current
ILO
OE=V
WE=VIL
Condition
o=VIH , CEs=VIH or
IH or
(Vcc=3.0V±0.3V,Ta=-20 to 70°C)
Min. Max.
-1.0
Typ.
1.0
1.0-1.0
VOUT=0 to VCC
I
Output High Voltage
Output Low Voltage
Standby Power
Supply Current
OH
V
VOL
ICCS
ICCS1
OH=-500µA
OL=2.1mA
I
o≥VCC-0.2V
CE
CEs≥VCC-0.2V
IN=0 to VCC
V
CEo=VIH
CEs=VIH
Vcc-0.5
0.4
10
0.3
VIN=VIH or VIL
CE
o=VIH
CEs=VIL
OE=VIH
35
VIN=VIH/VIL
TCYC=100nS
ICCA
(SRAM)
Operating Power
Supply Current
CEo≥VCC-0.2V
CE
s≤0.2V
OE≥VCC-0.2V
V
IH≥VCC-0.2V
VIL≤0.2V
TCYC=1µS
CEo=V
IL
CEs=VIH
OE=V
IH
IN=VIH/VIL
V
TCYC=100nS
10
35
ICCA*
(OTP)
CEo≤0.2V
CE
s≥VCC-0.2V
OE
≥VCC-0.2V
V
IH≥VCC-0.2V
VIL≤0.2V
TCYC=1µS
20
µA
µA
V
V
µA
mA
mA
mA
mA
mA
VPP Power
Supply Current
* Read Current
IPP
VPP=VCC
10
µA
6
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