The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that
features high efficiency at 3 V. Since the KGF2236 is made up of Driver FET and Power FET, that
is good to develop smaller and lighter. The KGF2236 specifications are guaranteed to fixed
matching circuit of 3.5 V and 835 MHz; external impedance-matching circuit are also required.
The KGF2236 provides high efficiency 60% (typical) with a 31.5 dBm (min. @Pin=7 dBm) output
at 3.5 V. The device is optimized for transmitter-final-stage amplifiers in Portable Handy Phones
(PHPs) and other 3 V analog cellular phone.
FEATURES
• Dual monolithic GaAs Power FET
• High efficiency: 60% (typ.)
• High gain: 25 dB
• Specifications guaranteed to a fixed matching circuit at 3.5 V, 835 MHz
• Package: 16PSSOP
PACKAGE DIMENSIONS
5.5±0.12
16
6.4±0.2
5.0±0.120.70±0.2
1
0.65±0.1
(4.55)
0.22±0.1
9
8
0.25±0.1
1.1
(2.6)
(2.6)
(3.0)
Unit: mm
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Page 2
MARKING
KGF2236¡ electronic components
(16)(9)
CIRCUIT
K2236
X X X X
Index
(1)(8)
(3)
(1)
Q1
Production Name
Lot Number
Monthly Lot Number
Production Month (1–9, X, Y, Z)
Production Year (Lowest Digit)
(4)
(6)
Q2
(2)
Q1: First stage (Driver-FET)
(1) Gate
(2) Source
(3) Drain
(5)
Q2: Final stage (Power-FET)
(4) Gate
(5) Source
(6) Drain
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Page 3
KGF2236¡ electronic components
ABSOLUTE MAXIMUM RATINGS
ItemSymbolConditionsUnitMin. Max.Notes
Drain-source voltageQ1V
Gate-source voltageQ1V
Drain currentQ1I
Total power dissipationQ1P
Channel temperatureQ1T
Drain-source voltageQ2V
Gate-source voltageQ2V
Drain currentQ2I
Total power dissipationQ2P
Channel temperatureQ2T
Storage temperatureT
DSI
GSI
DSI
tot1
ch1
DS2
GS2
DS2
tot2
ch2
stg
Ta = 25°CV—8.0
Ta = 25°CV–6.00.4
Ta = 25°CA—1.0
Ta = Tc = 25°CW—2.0
—°C—150
T a= 25°CV—8.0
Ta = 25°CV–6.00.4
Ta = 25°CA—5.0
Ta = Tc = 25°CW—5.0
—°C—150
—°C–45150
ELECTRICAL CHARACTERISTICS
ItemSymbolConditionsUnitMin.Typ.Notes
Gate-source leakage currentQ1I
Gate-drain cut-off voltageQ1V
Drain currentQ1I
Gate bias Q pointQ1V
Thermal resistanceQ1R
Gate-source leakage currentQ2I
Gate-drain cut-off voltageQ2V
Drain currentQ2I
Gate bias Q pointQ2V
Thermal resistanceQ2R
GSS1
GDO1
DSS1
GSQ1
th1
GSS2
GDO2
DSS2
GSQ2
th2
Output PowerP
Power added efficiencyPAE*1%5560
VGS = –6 VmA——
IGD = –0.3 mAV–15—
VDS = 1.5 V, VGS = 0 VA0.4—
VDS = 3.5 V, IDS = 80 mAV–2.5—
Channel to Case°C/W——
VGS = –6 VmA——
IGD = –2.4 mAV–15—
VDS = 1.5 V, VGS = 0 VA4.0—
VDS = 3.5 V, IDS = 200 mAV–2.8—
Channel to Case°C/W——
*1dBm31.5——
O
(Ta=25°C)
(Ta=25°C)
Max.
0.1
—
—
–1.5
50
0.1
—
—
–1.8
20
—
Q1+Q2
Q1+Q2
*1 Condition: f = 835 MHz, VDS = 3.5 V, I
DSQ1
= 80 mA, I
= 200 mA, PIN = 7 dBm
DSQ2
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Page 4
RF CHARACTERISTICS
p
]
]
Macthing condition
KGF2236
G
G
G
S2
L2
Normalized source impedance of 1st-stageGS1 = 0.323 + j0.940
Normalized load impedance of 1st-stageGL1 = 0.046 + j0.487
Normalized source impedance of final-stageGS2 = 0.032 + j0.124
Normalized load impedance of final-stageGL2 = 0.088 + j0.035
Po and P.A.E. vs. Pin
3380
3170
2960
2750
Vds = 3.5 V
IdsQ1 = 80 mA
IdsQ2 = 200 mA
freq = 835 MHz
G
S1
L1
KGF2236¡ electronic components
2540
2330
2120
Output Power Pout [dBm]
1910
17
–12
3370
32.567
3264
31.564
3158
Output Power Pout [dBm]
30.555
30
2.7
–7–2
In
ut Power Pin [dBm
Pout and P.A.E. vs. Vds
f = 835 MHz
IdsQ1 = 80 mA
IdsQ2 = 200 mA
Macthing Condition:
(Refer to SS.3)