E2Q0033-38-72
This version: Jul. 1998
Previous version: Jan. 1998
KGF1631¡ electronic components
¡ electronic components
KGF1631
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that
features high efficiency and high output power. The KGF1631 specifications are guaranteed to
a fixed matching circuit for 3.4 V and 850 MHz; external impedance-matching circuits are also
required. The KGF1631 provides an output power of more than 24dBm at 3.4V, with high
efficiency (50% typ.) and high gain (21dB typ.). The device is optimized for transmitter driver
amplifier applications for Portable Handy Phones (PHPs) and other 3-V cellular phones.
FEATURES
• High output power: 24 dBm (min.)
• High gain: 21dB (typ.)
• High efficiency: 50% (typ.)
• Specifications guaranteed to a fixed matching circuits for 3.4 V, 850 MHz
• Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.5±0.1
+0.15
1.6
–0.10
+0.08
0.48
–0.05
3±0.1
0.4
+0.08
–0.05
1.5±0.1 1.5±0.1
0.4
+0.08
–0.05
0.11
±
2.5
0.2
±
0.2
±
4
±
0.05
0.39
(Unit: mm)
1.5±0.1
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
Cu
Solder plating
5 mm or more
1/6
MARKING
KGF1631¡ electronic components
CIRCUIT
(1)
(2)
(3)
Gate(1)
D5
XX
PRODUCT TYPE
LOT NUMBER
(NUMERICAL or
ALPHABETICAL)
Drain(3)
(1) Gate
(2) Source
(3) Drain
Source(2)
2/6
ABSOLUTE MAXIMUM RATINGS
KGF1631¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 0.8A —
Ta = Tc = 25°C
—
W
°C
— 125°C
Min.
—
–5
—
—
–45
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current 50mA—VGS = –5 V —
Gate-drain leakage current 500mA—VGD = –13 V —
Drain-source leakage current 500mA—VDS = 8 V, VGS = –5 V —
Drain current —mA 500VDS = 1.5 V, VGS = 0 V —
Gate bias Q point –2.0V –3.0
Output power —dBm
Linear gain G
Thermal resistance R
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GSQ
P
LIN
O
D
th
VDS = 3.4 V, I
(*1), P
(*1), P
= 7 dBm
IN
= 7 dBm %
IN
= 0 dBm
IN
DSQ
= 70 mA
dB
°C/W ——40Channel to case
Min.
24
45
Typ.
—
24.5
50Drain efficiency h
8
0.4
2
150
(Ta = 25°C)
—
——21(*1), P
*1 Condition: f = 850 MHz, V
= 3.4 V, I
DS
DSQ
= 70 mA
3/6
RF CHARACTERISTICS
KGF1631¡ electronic components
4/6
Typical S Parameters
Freq(MHz)
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
600.0
700.0
800.0
900.0
0.912
0.890
0.877
0.862
0.852
0.844
0.836
0.829
0.820
0.818
0.811
0.806
0.803
0.794
0.792
0.783
0.781
0.774
0.769
0.764
0.757
0.753
0.746
0.741
0.736
0.734
–82.96
–95.50
–105.77
–114.69
–122.49
–129.11
–135.35
–140.56
–145.56
–150.19
–154.29
–158.37
–162.27
–165.60
–169.02
–172.51
–175.43
–178.78
178.27
175.35
172.17
169.62
166.72
164.19
161.65
159.07
5.291
5.203
4.901
4.748
4.402
4.185
3.952
3.727
3.526
3.325
3.162
3.008
2.860
2.727
2.626
2.499
2.420
2.316
2.242
2.159
2.083
2.024
1.951
1.897
1.827
1.778
125.03
117.02
109.97
103.99
98.78
93.87
89.28
85.04
81.18
77.31
73.59
70.23
66.68
63.99
60.15
57.37
54.00
50.98
47.99
44.96
42.18
39.18
36.14
33.39
30.30
28.02
0.051
0.055
0.059
0.062
0.064
0.067
0.069
0.071
0.072
0.074
0.075
0.077
0.078
0.079
0.081
0.082
0.083
0.084
0.086
0.087
0.089
0.089
0.091
0.092
0.094
0.093
45.92
40.96
36.59
33.33
30.12
27.58
25.41
23.21
21.66
19.64
18.31
16.52
15.41
13.93
12.77
11.31
10.49
8.76
7.84
6.58
5.47
4.46
3.18
1.83
0.39
–0.72
V
DS =
3.4V, I
0.293
0.318
0.339
0.350
0.363
0.368
0.375
0.378
0.383
0.385
0.385
0.387
0.387
0.388
0.386
0.386
0.386
0.385
0.383
0.383
0.381
0.379
0.377
0.377
0.376
0.377
KGF1631¡ electronic components
DS =
60mA
–139.69
–145.24
–149.01
–152.49
–155.70
–158.02
–160.24
–162.50
–164.25
–166.00
–167.91
–169.46
–171.06
–172.92
–174.22
–175.82
–177.63
–178.86
179.19
177.94
176.06
174.75
173.09
171.74
169.90
168.25
5/6
Typical S Parameters
V
= 3.4 V, I
DS
= 60 mA
DS
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
KGF1631¡ electronic components
j1.0
j0.5
j0.2
0.0 0.2 0.5 1.0 2.0 5.0
3.0
3.0
S22
0.5
S11
0.5
j2.0
90
0.5
135
j5.0
180 0
5.0 4.0 3.0 2.0 1.0 0.02 0.04 0.06 0.08 0.10
S21
0.5
3.0
S12
45
3.0
6/6
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