OKI KGF1322S User Manual
E2Q0039-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1322S¡ electronic components
¡ electronic components
KGF1322S
Power FET (Ceramic Package Type)
GENERAL DESCRIPTION
The KGF1322S, housed in a SMD-type ceramic package, is a discrete UHF-band power FET that
features high efficiency, high output power, and low current operation. The KGF1322S specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedancematching circuits are also required. Because of its high efficiency, high output power (more than
33 dBm), and SMD package, the KGF1322S is ideal as a transmitter-final-stage amplifier for
personal handy phones, such as digital cellular phones.
FEATURES
• High output power: 33 dBm (min.)
• High efficiency: 60% (min.)
• Low thermal resistance: 18°C/W (typ.)
• Package: 3PFP
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MARKING
KGF1322S¡ electronic components
(1)
CIRCUIT
(2)
Gate(1)
K1322S
X X X X
(3)
PRODUCT NAME
LOT NUMBER
MONTHLY LOT NUMBER
PRODUCTION MONTH
(1-9,X,Y,Z)
PRODUCTION YEAR
(LOWEST DIGIT)
Drain(3)
(1) Gate
(2) Source
(3) Drain
Source(2)
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ABSOLUTE MAXIMUM RATINGS
KGF1322S¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 3A —
Ta = Tc = 25°C
—
W
°C
— 125°C
Min.
—
–6.0
—
—
–45
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current 0.1mA —VGS = –6 V —
Gate-drain leakage current 0.5mA —VGD = –16 V —
Drain-source leakage current 1.5mA —VDS = 10 V, VGS = –6 V —
Drain current —A 2.0VDS = 1.5 V, VGS = 0 V —
Gate-source cut-off voltage –2.6V –3.6VDS = 3 V, IDS = 4 mA —
Output power —dBm
Thermal resistance R
*1 Condition: f = 850 MHz, V
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
P
O
D
th
= 5.8 V, I
DS
(*1), P
(*1), P
= 22 dBm
IN
= 22 dBm %
IN
= 240 mA
DSQ
°C/W ——18Channel to case
Min.
33.0
60
Typ.
—
—Drain efficiency h
10
0.4
5
150
(Ta = 25°C)
—
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