GTD-18453 Rev1.0
Electronic Components
KGA4217L
Preliminary
This version: Nov.
2001
Limiting Amplifier IC
DESCRIPTION
KGA4217L, limiting Amplifier IC with 0.18 µm gate length GaAs MESFETs, has been designed for 10 Gb/s
digital communication systems. By using DCFL(Direct C
oupled FET Logic), high speed operation of 10 Gb/s
and low power dissipation have been realized. Capacitive coupling is recommended for I/O connections.
FUNCTION DIAGRAM
V
DD
V
DIN
DR1
DR2
5Ω
50Ω
DD
Q
V
DD
QN
DIN: Data Input
DR1: RF Bypass for data threshold stability
DR2: Data Threshold Control (Duty Cycle Control)
Q, QN: Complimentary Data Outputs
: Power Supply
V
DD
ABSOLUTE MAXIMUM RATINGS
Items Symbol Min. Max. Units
Supply Voltage V
Applied Voltage at DIN, DR1 VDI —0.3 1.5 V
Applied Voltage at DR2 VRI —2.5 2.5 V
Temperature at Package Base under Bias Ts —45 100 ¡C
Storage Temperature Tst —45 125 ¡C
DD
—0.3 2.3 V
ELECTRICAL CHARACTERISTICS
VDD = 2 V ±0.1 V, Ts = 0 to 70°C
Items Symbol Min. Typ. Max. Units
Maximum Operating Data Bit Rate DAR 10 Gb/s
Power Dissipation PW 0.25 0.35 W
Data Input Voltage Swing VI 0.035 0.6 Vpp
Data Output Voltage Swing VO 0.4 0.6 0.9 Vpp
GTD-18453 REV 1.0
1
Electronic Components KGA4217L
PAD LAYOUT
(—600 +25/0, 450 +0/—25)
(—495, 345)
(—495, 195)
(—495, 45)
(—495, —10
(—495, —255 )
GND
QN
GND
Q
(—405, —19
GND
(—245, 345
(—280, 255
(—405, 105
(—405, —4
(—280, —34
VDD
(—155, 255
(—245, —25
DR2
(—155, —3
Y
(0, 0)
X Y
(255, 345)
(345, 255)
X
(380, 345)
VDD
(405, 255)
(405, 95)
(405, —30)
(405, —255
Unit: µm
(495, 345)
GND
(495, 130)
DIN
(495, 5)
GND
(495, —22
DR1
(495, —34
CONNECTION EXAMPLE
Z0=50Ω
50Ω
Z0=50Ω
50Ω
0.1µF
0.1µF
GND
QN
ND
Q
GND
220pF
VDD
DR2
0.1µF
50Ω
2.0V
VDD
GND
DIN
GND
DR1
0.1µF
(600 +0/—25, —450 +25/0)
0.1µF220pF
Z0=50Ω
220pF 0.1µF
OTE
- Capacitive coupling is recommended for high speed I/O terminals ( DIN, Q, QN).
- DR1 is RF bypass terminal for data threshold level stability and should be connected to
ground through RF bypass capacitors (220pF and 0.1 µF). The data threshold level is fixed by