PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
Rev. 07 — 24 September 2008 Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
Table 1. Product overview
Type number Package PNP/PNP
PEMD2 SOT666 - PEMB1 PEMH1
PIMD2 SOT457 SC-74 - PUMD2 SOT363 SC-88 PUMB1 PUMH1
1.2 Features
NXP JEITA
complement
NPN/NPN
complement
n Built-in bias resistors
n Simplifies circuit design
n Reduces component count
n Reduces pick and place costs
1.3 Applications
n Low current peripheral driver
n Control of IC inputs
n Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
collector-emitter voltage open base - - 50 V
output current - - 100 mA
NXP Semiconductors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
PEMD2; PUMD2
1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
6 45
1 32
001aab555
65 4
R2
R1
TR1
R2 R1
TR2
PIMD2
1 GND (emitter) TR2
2 input (base) TR2
3 output (collector) TR1
4 GND (emitter) TR1
5 input (base) TR1
6 output (collector) TR2
3. Ordering information
Table 4. Ordering information
Type number Package
PEMD2 - plastic surface-mounted package; 6 leads SOT666
PIMD2 SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
PUMD2 SC-88 plastic surface-mounted package; 6 leads SOT363
132
1
4
56
654
TR2
R2
123
23
006aaa143
R1 R2
R1
006aab235
Name Description Version
TR1
PEMD2_PIMD2_PUMD2_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 24 September 2008 2 of 16
NXP Semiconductors
4. Marking
Table 5. Marking codes
Type number Marking code
PEMD2 D4
PIMD2 M5
PUMD2 D*2
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
j
T
amb
T
stg
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
[1]
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage TR1
positive - +40 V
negative - −10 V
input voltage TR2
positive - +10 V
negative - −40 V
output current - 100 mA
peak collector current single pulse;
t
≤ 1ms
p
total power dissipation T
amb
≤ 25 °C
PEMD2 (SOT666)
PIMD2 (SOT457) - 300 mW
PUMD2 (SOT363) - 200 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
- 100 mA
[1]
[2]
- 200 mW
PEMD2_PIMD2_PUMD2_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 24 September 2008 3 of 16
NXP Semiconductors
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
P
tot
total power dissipation T
PEMD2 (SOT666)
PIMD2 (SOT457) - 600 mW
PUMD2 (SOT363) - 300 mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
PEMD2 (SOT666)
PIMD2 (SOT457) - - 417 K/W
PUMD2 (SOT363) - - 625 K/W
thermal resistance from
junction to ambient
PEMD2 (SOT666)
PIMD2 (SOT457) - - 208 K/W
PUMD2 (SOT363) - - 416 K/W
…continued
≤ 25 °C
amb
in free air
in free air
[1]
[2]
- 300 mW
[1]
[2]
- - 625 K/W
[1]
[2]
- - 416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMD2_PIMD2_PUMD2_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 24 September 2008 4 of 16
NXP Semiconductors
7. Characteristics
Table 8. Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
collector-basecut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain VCE=5V; IC= 5 mA 60 - collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
collector capacitance VCB=10V;IE=ie=0A;
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
VCB=50V; IE= 0 A - - 100 nA
VCE=30V; IB=0A --1µA
=30V; IB=0A;
V
CE
T
= 150 °C
j
--50µA
VEB=5V; IC= 0 A - - 180 µA
IC= 10 mA; IB= 0.5 mA - - 150 mV
VCE=5V; IC= 100 µA - 1.1 0.8 V
VCE= 0.3 V; IC= 5 mA 2.5 1.7 - V
f=1MHz
PEMD2_PIMD2_PUMD2_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 24 September 2008 5 of 16
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