NXP PMV65XP Schematic [ru]

S

O

T

2

3

PMV65XP

20 V, single P-channel Trench MOSFET

12 February 2013 Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

2. Features and benefits

Low threshold voltage

•

Low on-state resistance

•

Trench MOSFET technology

•

3. Applications

Low power DC-to-DC converters

•

Load switching

•

Battery management

•

Battery powered portable equipment

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

V

GS

I

D

Static characteristics

R

DSon

drain-source voltage - - -20 V

gate-source voltage

drain current VGS = -4.5 V; Tsp = 25 °C - - -4.3 A

drain-source on-state
resistance

Tj = 25 °C

-12 - 12 V

VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ

Scan or click this QR code to view the latest information for this product

NXP Semiconductors

1 2

3

S

D

G

017aaa257

PMV65XP

20 V, single P-channel Trench MOSFET

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

TO-236AB (SOT23)

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMV65XP TO-236AB plastic surface-mounted package; 3 leads SOT23

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

PMV65XP %M9

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

V

I

I

P

DS

GS

D

DM

tot

drain-source voltage - -20 V

gate-source voltage

drain current

peak drain current T

total power dissipation

Tj = 25 °C

-12 12 V

VGS = -4.5 V; Tsp = 25 °C - -4.3 A

VGS = -4.5 V; T

VGS = -4.5 V; T

= 25 °C; single pulse; tp ≤ 10 µs - -16 A

amb

= 25 °C

amb

= 25 °C [1] - -2.8 A

amb

= 100 °C [1] - -1.8 A

amb

[2] - 480 mWT

[1] - 833 mW

Tsp = 25 °C - 4165 mW

PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved

Product data sheet 12 February 2013 2 / 14

NXP Semiconductors

Tj(°C)

- 75 17512525 75- 25

017aaa123

40

80

120

P

der

(%)

0

Tj(°C)

- 75 17512525 75- 25

017aaa124

40

80

120

I

der

(%)

0

PMV65XP

20 V, single P-channel Trench MOSFET

Symbol Parameter Conditions Min Max Unit

T

j

T

amb

T

stg

Source-drain diode

I

S

junction temperature -55 150 °C

ambient temperature -55 150 °C

storage temperature -65 150 °C

source current Tsp = 25 °C - -1.6 A

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Fig. 1. Normalized total power dissipation as a

function of junction temperature

PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved

Fig. 2. Normalized continuous drain current as a

function of junction temperature

Product data sheet 12 February 2013 3 / 14

NXP Semiconductors

017aaa838

-1

-10

-1

-10

-10

2

I

D

(A)

-10

-2

VDS (V)

-10

-1

-10

2

-10-1

Limit R

DSon

= VDS/I

D

DC; Tsp = 25 °C

DC; T

amb

= 25 °C;

drain mounting pad 6 cm

2

tp = 1 ms

tp = 10 ms

tp = 100 ms

PMV65XP

20 V, single P-channel Trench MOSFET

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

thermal resistance
from junction to
ambient

thermal resistance
from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]

th(j-a)

R

th(j-sp)

in free air

[1] - 230 260 K/WR

[2] - 125 150 K/W

- 25 30 K/W

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved

Product data sheet 12 February 2013 4 / 14

NXP Semiconductors

017aaa839

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

duty cycle = 1

0.02

0.01

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0

017aaa840

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

PMV65XP

20 V, single P-channel Trench MOSFET

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 6 cm

2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GSth

DSS

PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved

Product data sheet 12 February 2013 5 / 14

drain-source
breakdown voltage

gate-source threshold
voltage

drain leakage current

ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V

ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.65 -0.9 V

VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µAI

VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -100 µA