NXP PMV65XP Schematic [ru]

PMV65XP

20 V, single P-channel Trench MOSFET

12 February 2013 Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

Low threshold voltage

•

Low on-state resistance

•

Trench MOSFET technology

•

3. Applications

Low power DC-to-DC converters

•

Load switching

•

Battery management

•

Battery powered portable equipment

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

DSon

drain-source voltage - - -20 V

gate-source voltage

drain current VGS = -4.5 V; Tsp = 25 °C - - -4.3 A

drain-source on-state resistance

Tj = 25 °C

-12 - 12 V

VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ

Scan or click this QR code to view the latest information for this product

NXP Semiconductors

1 2

017aaa257

PMV65XP

20 V, single P-channel Trench MOSFET

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

TO-236AB (SOT23)

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMV65XP TO-236AB plastic surface-mounted package; 3 leads SOT23

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

PMV65XP %M9

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

drain-source voltage - -20 V

gate-source voltage

drain current

peak drain current T

total power dissipation

Tj = 25 °C

-12 12 V

VGS = -4.5 V; Tsp = 25 °C - -4.3 A

VGS = -4.5 V; T

= 25 °C; single pulse; tp ≤ 10 µs - -16 A

amb

= 25 °C

amb

= 25 °C [1] - -2.8 A

amb

= 100 °C [1] - -1.8 A

amb

[2] - 480 mWT

[1] - 833 mW

Tsp = 25 °C - 4165 mW

Product data sheet 12 February 2013 2 / 14

NXP Semiconductors

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

der

(%)

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

der

(%)

PMV65XP

20 V, single P-channel Trench MOSFET

Symbol Parameter Conditions Min Max Unit

amb

stg

Source-drain diode

junction temperature -55 150 °C

ambient temperature -55 150 °C

storage temperature -65 150 °C

source current Tsp = 25 °C - -1.6 A

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Fig. 2. Normalized continuous drain current as a

function of junction temperature

Product data sheet 12 February 2013 3 / 14

NXP Semiconductors

017aaa838

-1

-10

-1

-10

(A)

-10

-2

VDS (V)

-10

-1

-10

-10-1

Limit R

DSon

= VDS/I

DC; Tsp = 25 °C

DC; T

amb

= 25 °C;

drain mounting pad 6 cm

tp = 1 ms

tp = 10 ms

tp = 100 ms

PMV65XP

20 V, single P-channel Trench MOSFET

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

thermal resistance from junction to ambient

thermal resistance from junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2]

th(j-a)

th(j-sp)

in free air

[1] - 230 260 K/WR

[2] - 125 150 K/W

- 25 30 K/W

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

Product data sheet 12 February 2013 4 / 14

NXP Semiconductors

017aaa839

tp (s)

-3

10110

-2

-1

th(j-a)

(K/W)

duty cycle = 1

0.02

0.01

0.75

0.5

0.33

0.25

0.2

0.1

0.05

017aaa840

tp (s)

-3

10110

-2

-1

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

PMV65XP

20 V, single P-channel Trench MOSFET

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 6 cm

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GSth

DSS

Product data sheet 12 February 2013 5 / 14

drain-source breakdown voltage

gate-source threshold voltage

drain leakage current

ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V

ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.65 -0.9 V

VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µAI

VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -100 µA

NXP Semiconductors

VDS (V)

0 -5.00-3.75-1.25 -2.50

017aaa841

-6

-3

-9

-12

(A)

-4.5 V

-2.5 V

VGS= -1.8 V

-2 V

-1.7 V

-1.6 V

-1.5 V

-1.3 V

017aaa850

-4

-5

-3

(A)

-6

VGS (V)

0 1.00.80.4 0.60.2

min typ

max

PMV65XP

20 V, single P-channel Trench MOSFET

Symbol Parameter Conditions Min Typ Max Unit

GSS

gate leakage current

VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nAI

VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA

DSon

drain-source on-state resistance

forward transconductance

Dynamic characteristics

G(tot)

iss

oss

rss

total gate charge - 7.7 - nC

gate-source charge - 1 - nC

gate-drain charge

input capacitance - 744 - pF

output capacitance - 65 - pF

reverse transfer capacitance

d(on)

d(off)

turn-on delay time - 7 - ns

rise time - 18 - ns

turn-off delay time - 135 - ns

fall time

Source-drain diode

source-drain voltage IS = -0.9 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V

VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ

VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C - 82 105 mΩ

VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C - 67 92 mΩ

VGS = -1.8 V; ID = -1 A; Tj = 25 °C - 87 135 mΩ

VDS = -10 V; ID = -2.8 A; Tj = 25 °C - 15 - S

VDS = -6 V; ID = -2.8 A; VGS = -4.5 V;

Tj = 25 °C

- 1.65 - nC

VDS = -20 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 53 - pF

VDS = -6 V; VGS = -4.5 V; R

G(ext)

= 6 Ω;

Tj = 25 °C; ID = -1 A

- 68 - ns

Fig. 6. Output characteristics: drain current as a

Product data sheet 12 February 2013 6 / 14

Tj = 25 °C

function of drain-source voltage; typical values

Tj = 25 °C; VDS = -5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

NXP Semiconductors

ID (A)

0 -15-10-5

017aaa842

100

200

300

DSon

(mΩ)

-1.4 V -1.5 V -1.6 V -1.7 V -1.8 V

-2 V

-2.5 V

VGS= -4.5 V

VGS (V)

0 -8-6-2 -4

017aaa843

100

200

300

DSon

(mΩ)

Tj= 150 °C

Tj= 25 °C

VGS (V)

0 -2.0-1.5-0.5 -1.0

017aaa844

-6

-3

-9

-12

(A)

Tj= 150 °C Tj= 25 °C

Tj (°C)

-60 1801200 60

017aaa845

1.0

0.5

1.5

2.0

PMV65XP

20 V, single P-channel Trench MOSFET

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VDS > ID × R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

ID = -2.8 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical values

Product data sheet 12 February 2013 7 / 14

NXP Semiconductors

Tj (°C)

-60 1801200 60

017aaa846

-1.0

-0.5

-1.5

-2.0

GS(th)

(V)

max

typ

min

017aaa847

VDS (V)

-10

-1

-10

-10-1

(pF)

iss

oss

rss

QG (nC)

0 10.07.52.5 5.0

017aaa848

-2

-3

-1

-4

-5

(V)

017aaa137

GS(th)

GS1QGS2

G(tot)

GS(pl)

PMV65XP

20 V, single P-channel Trench MOSFET

ID = -0.25 mA; VDS = V

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

ID = -2.8 A; VDS = -6 V; T

amb

= 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

Fig. 15. Gate charge waveform definitions

Product data sheet 12 February 2013 8 / 14

NXP Semiconductors

017aaa849

VSD (V)

0 -1.5-1.0-0.5

-6

-3

-9

-12

(A)

Tj= 150 °C Tj= 25 °C

006aaa812

duty cycle δ =

VGS = 0 V

(1) Tj = 150 °C

(2) Tj = 25 °C

PMV65XP

20 V, single P-channel Trench MOSFET

Fig. 16. Source current as a function of source-drain voltage; typical values

11. Test information

Fig. 17. Duty cycle definition

Product data sheet 12 February 2013 9 / 14

NXP Semiconductors

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

1 2

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

12. Package outline

Fig. 18. Package outline TO-236AB (SOT23)

PMV65XP

20 V, single P-channel Trench MOSFET

13. Soldering

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

Product data sheet 12 February 2013 10 / 14

NXP Semiconductors

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

PMV65XP

20 V, single P-channel Trench MOSFET

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMV65XP v.2 20130212 Product data sheet - PMV65XP v.1

Modifications:

PMV65XP v.1 20120921 Product data sheet - -

Pinning information corrected

•

Product data sheet 12 February 2013 11 / 14

NXP Semiconductors

15. Legal information

15.1 Data sheet status

Document status [1][2]

Objective [short] data sheet

Preliminary [short] data sheet

Product [short] data sheet

[1] Please consult the most recently issued document before initiating or

completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

Product status [3]

Development This document contains data from

Qualification This document contains data from the

Production This document contains the product

Definition

the objective specification for product development.

preliminary specification.

specification.

PMV65XP

20 V, single P-channel Trench MOSFET

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

15.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.

products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the

Product data sheet 12 February 2013 12 / 14

NXP Semiconductors

grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.

PMV65XP

20 V, single P-channel Trench MOSFET

15.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

Product data sheet 12 February 2013 13 / 14

NXP Semiconductors

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................2

9 Thermal characteristics .........................................4

10 Characteristics ....................................................... 5

11 Test information ..................................................... 9

12 Package outline ................................................... 10

13 Soldering .............................................................. 10

14 Revision history ...................................................11

15 Legal information .................................................12

15.1 Data sheet status ............................................... 12

15.2 Definitions ...........................................................12

15.3 Disclaimers ......................................................... 12

15.4 Trademarks ........................................................ 13

PMV65XP

20 V, single P-channel Trench MOSFET

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 February 2013

Product data sheet 12 February 2013 14 / 14

NXP PMV65XP Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1. General description

2. Features and benefits

3. Applications

4. Quick reference data

5. Pinning information

6. Ordering information

7. Marking

8. Limiting values

9. Thermal characteristics

10. Characteristics

11. Test information

12. Package outline

13. Soldering

14. Revision history

15. Legal information