NXP PMSTA92 Schematic [ru]
DATA SH EET
handbook, halfpage
DISCRETE SEMICONDUCTORS
M3D102
PMSTA92
PNP high-voltage transistor
Product data sheet
Supersedes data of 1999 Jun 01
2001 Feb 20
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMSTA92
FEATURES
• S-mini package
• High voltage.
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• Primarily intended for use in telephony and professional
communication equipment.
handbook, halfpage
DESCRIPTION
PNP transistor in a microminiature (SMD) plastic package
intended for surface mounted applications.
MARKING
TYPE NUMBER MARKING CODE
PMSTA92 tD2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Top view
3
3
1
2
1
2
MAM048
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −300 V
collector-emitter voltage open base − −300 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 625 K/W
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
2001 Feb 20 2
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMSTA92
CHARACTERISTICS
T
= 25 °C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
V
C
C
f
T
FE
CEsat
BEsat
c
e
collector cut-off current VCB = −200 V; IE = 0 − − −100 nA
emitter cut-off current VBE = −3 V; IC = 0 − − −100 nA
DC current gain IC = −1 mA; VCE = −10 V 40 − −
IC = −10 mA; VCE = −10 V 40 − −
IC = −30 mA; VCE = −10 V 30 − −
saturation voltage IC = −20 mA; IB = −2 mA; note 1 − − −250 mV
saturation voltage IC = −20 mA; IB = −2 mA; note 1 − − −900 mV
collector-base capacitance VCB = −20 V; IE = ie = 0; f = 1 MHz − 1.9 3.5 pF
emitter-base capacitance VEB = −5 V; IC = ic = 0; f = 1 MHz − 20 − pF
transition frequency VCE = −20 V; IC = −10 mA;
50 − − MHz
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Feb 20 3
Loading...