NXP PMSTA92 Schematic [ru]

DATA SH EET

handbook, halfpage

DISCRETE SEMICONDUCTORS

M3D102

PMSTA92

PNP high-voltage transistor

Product data sheet
Supersedes data of 1999 Jun 01

2001 Feb 20

NXP Semiconductors Product data sheet

PNP high-voltage transistor PMSTA92

FEATURES

• S-mini package

• High voltage.

PINNING

PIN DESCRIPTION

1 base

2 emitter

APPLICATIONS

3 collector

• Primarily intended for use in telephony and professional
communication equipment.

handbook, halfpage

DESCRIPTION

PNP transistor in a microminiature (SMD) plastic package
intended for surface mounted applications.

MARKING

TYPE NUMBER MARKING CODE

PMSTA92 tD2

Fig.1 Simplified outline (SOT323) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Top view

3

3

1

2

1

2

MAM048

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

V

V

I

I

I

P

T

T

T

CBO

CEO

EBO

C

CM

BM

tot

stg

j

amb

collector-base voltage open emitter − −300 V

collector-emitter voltage open base − −300 V

emitter-base voltage open collector − −5 V

collector current (DC) − −100 mA

peak collector current − −200 mA

peak base current − −100 mA

total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C

junction temperature − 150 °C

operating ambient temperature −65 +150 °C

Note

1. Refer to SOT323 (SC-70) standard mounting conditions.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air; note 1 625 K/W

Note

1. Refer to SOT323 (SC-70) standard mounting conditions.

2001 Feb 20 2

NXP Semiconductors Product data sheet

PNP high-voltage transistor PMSTA92

CHARACTERISTICS

T

= 25 °C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

V

V

C

C

f

T

FE

CEsat

BEsat

c

e

collector cut-off current VCB = −200 V; IE = 0 − − −100 nA

emitter cut-off current VBE = −3 V; IC = 0 − − −100 nA

DC current gain IC = −1 mA; VCE = −10 V 40 − −

IC = −10 mA; VCE = −10 V 40 − −

IC = −30 mA; VCE = −10 V 30 − −

saturation voltage IC = −20 mA; IB = −2 mA; note 1 − − −250 mV

saturation voltage IC = −20 mA; IB = −2 mA; note 1 − − −900 mV

collector-base capacitance VCB = −20 V; IE = ie = 0; f = 1 MHz − 1.9 3.5 pF

emitter-base capacitance VEB = −5 V; IC = ic = 0; f = 1 MHz − 20 − pF

transition frequency VCE = −20 V; IC = −10 mA;

50 − − MHz

f = 100 MHz

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

2001 Feb 20 3

NXP Semiconductors Product data sheet

3

PNP high-voltage transistor PMSTA92

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT32

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

Q

c

L

p

X

v M

A

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.3

IEC JEDEC EIAJ

0.25

0.10

2.2

1.8

E

1.35

1.15

REFERENCES

1.3

e

e1H

0.65

2.2

2.0

L

Qwv

p

E

0.45

0.15

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

2001 Feb 20 4

NXP Semiconductors Product data sheet

PNP high-voltage transistor PMSTA92

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions

2001 Feb 20 5

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]

© NXP B.V. 2009

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/03/pp6 Date of release: 2001 Feb 20 Document order number: 9397 750 07875