PMST3906
40 V, 200 mA PNP switching transistor
Rev. 05 — 29 April 2009 Product data sheet
1. Product profile
1.1 General description
PNP switchingtransistorinaSOT323 (SC-70) very small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMST3904.
1.2 Features
n Collector current: IC≤−200 mA
n Collector-emitter voltage: V
n Very small SMD plastic package
1.3 Applications
CEO
≤−40 V
n General amplification and switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
CEO
C
collector-emitter voltage open base - - −40 V
collector current - - −200 mA
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 emitter
3 collector
3
12
3
1
2
sym013
NXP Semiconductors
3. Ordering information
Table 3. Ordering information
Type number Package
PMST3906 SC-70 plastic surface-mounted package; 3 leads SOT323
4. Marking
Table 4. Marking codes
Type number Marking code
PMST3906 *2A
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMST3906
40 V, 200 mA PNP switching transistor
Name Description Version
[1]
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
collector-base voltage open emitter - −40 V
collector-emitter voltage open base - −40 V
emitter-base voltage open collector - −6V
collector current - −200 mA
peak collector current single pulse;
peak base current single pulse;
total power dissipation T
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
footprint.
6. Thermal characteristics
t
≤ 1ms
p
t
≤ 1ms
p
amb
≤ 25 °C
- −200 mA
- −100 mA
[1]
- 200 mW
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
in free air
[1]
- - 625 K/W
to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 2 of 10
NXP Semiconductors
7. Characteristics
Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
t
d
t
r
t
on
t
s
t
f
t
off
C
c
C
e
f
T
NF noise figure I
PMST3906
40 V, 200 mA PNP switching transistor
=25°C unless otherwise specified.
collector-basecut-off
current
emitter-base cut-off
current
DC current gain VCE= −1V
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time IC= −10 mA;
rise time - - 35 ns
turn-on time - - 70 ns
storage time - - 225 ns
fall time - - 75 ns
turn-off time - - 300 ns
collector capacitance IE=ie=0A;VCB= −5V;
emitter capacitance IC=ic=0A;
transition frequency IC= −10 mA;
IE= 0 A; VCB= −30 V - - −50 nA
IC= 0 A; VEB= −6V - - −50 nA
= −0.1 mA 60 - -
I
C
= −1mA 80 - -
I
C
= −10 mA 100 - 300
I
C
= −50 mA 60 - -
I
C
= −100 mA 30 - -
I
C
IC= −10 mA; IB= −1mA - - −250 mV
= −50 mA; IB= −5mA - - −400 mV
I
C
IC= −10 mA; IB= −1mA - - −850 mV
= −50 mA; IB= −5mA - - −950 mV
I
C
--35ns
I
= −1 mA;
Bon
I
=1mA
Boff
- - 4.5 pF
f=1MHz
--10pF
V
= −500 mV;
EB
f=1MHz
250 - - MHz
V
= −20 V;
CE
f = 100 MHz
= −100 µA;
C
V
= −5 V; RS=1kΩ;
CE
--4dB
f = 10 Hz to 15.7 kHz
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 3 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
−10
mhc459
2
(mA)
I
C
−10
3
h
600
FE
400
200
0
−10
(1)
(2)
(3)
−1
−1 −10
VCE= −1V
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 1. DC current gain as a function of collector
current; typical values
−250
I
C
(mA)
−200
−150
−100
−50
0
−2
0 −10
T
=25°C
amb
IB (mA) = −1.5
−4 −6 −8
006aab475
−1.20
−0.90
−0.60
−0.30
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
−1.35
−1.05
−0.75
−0.45
−0.15
VCE (V)
−10
mhc461
(mA)
−10
3
2
I
C
−1200
V
BE
(mV)
−1000
−800
−600
−400
−200
−10
(1)
(2)
(3)
−1
−1 −10
VCE= −1V
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 3. Base-emitter voltage as a function of collector
current; typical values
−10
mhc462
(mA)
−10
3
2
I
C
−1200
V
BEsat
(mV)
−1000
−800
−600
−400
−200
−10
(1)
(2)
(3)
−1
−1 −10
IC/IB=10
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 4 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
−10
2
IC (mA)
mhc463
−10
3
V
(mV)
−10
CEsat
−10
−10
3
2
−10
(1)
(2)
(3)
−1
−1 −10
IC/IB=10
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current;
typical values
8. Test information
Fig 6. Test circuit for switching times
V
BB
R
B
oscilloscope
V
I
R
(probe)
450 Ω
R2
R1
VI= 5 V; t = 500 µs; tp=10µs; tr=tf≤ 3ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB= 3.9 kΩ; RC= 270 Ω
VBB= 1.9 V; VCC= −3V
Oscilloscope: input impedance ZI=50Ω
V
CC
C
V
o
(probe)
oscilloscope
450 Ω
DUT
mgd624
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 5 of 10
NXP Semiconductors
9. Package outline
PMST3906
40 V, 200 mA PNP switching transistor
Fig 7. Package outline SOT323 (SC-70)
10. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PMST3906 SOT323 4 mm pitch, 8 mm tape and reel -115 -135
2.2
2.0
2.2
1.8
3
1.35
1.15
12
1.3
0.4
0.3
0.45
0.15
1.1
0.8
0.25
0.10
04-11-04Dimensions in mm
[1]
3000 10000
[1] For further information and the availability of packing methods, seeSection 14.
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 6 of 10
NXP Semiconductors
11. Soldering
PMST3906
40 V, 200 mA PNP switching transistor
2.65
1.85
1.325
solder lands
2
0.55
(3×)
3
1
1.3
0.5
(3×)
2.35
0.6
(3×)
Fig 8. Reflow soldering footprint SOT323 (SC-70)
4.6
2.575
1.425
(3×)
3.65 2.1
09
(2×)
1.8
solder resist
solder paste
occupied area
Dimensions in mm
sot323_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig 9. Wave soldering footprint SOT323 (SC-70)
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 7 of 10
NXP Semiconductors
40 V, 200 mA PNP switching transistor
PMST3906
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMST3906_5 20090429 Product data sheet - PMST3906_4
Modifications:
PMST3906_4 20040121 Product specification - PMST3906_3
PMST3906_3 19990422 Product specification - PMST3906_CNV_2
PMST3906_CNV_2 19970527 Product specification - -
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Figure 2: updated
• Figure 5: figure notes order amended
• Section 10 “Packing information” added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 8 of 10
NXP Semiconductors
13. Legal information
13.1 Data sheet status
PMST3906
40 V, 200 mA PNP switching transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
[1][2]
Product status
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shallhave no liabilityfor the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product typenumber(s) andtitle. A short datasheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
[3]
http://www.nxp.com.
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings only andoperation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
13.4 Trademarks
Notice: All referenced brands, product names, service namesand trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 9 of 10
NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 6
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PMST3906
40 V, 200 mA PNP switching transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 April 2009
Document identifier: PMST3906_5
Loading...