NXP PMST3906 Schematic [ru]
PMST3906
40 V, 200 mA PNP switching transistor
Rev. 05 — 29 April 2009 Product data sheet
1. Product profile
1.1 General description
PNP switchingtransistorinaSOT323 (SC-70) very small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMST3904.
1.2 Features
n Collector current: IC≤−200 mA
n Collector-emitter voltage: V
n Very small SMD plastic package
1.3 Applications
CEO
≤−40 V
n General amplification and switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
CEO
C
collector-emitter voltage open base - - −40 V
collector current - - −200 mA
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 emitter
3 collector
3
12
3
1
2
sym013
NXP Semiconductors
3. Ordering information
Table 3. Ordering information
Type number Package
PMST3906 SC-70 plastic surface-mounted package; 3 leads SOT323
4. Marking
Table 4. Marking codes
Type number Marking code
PMST3906 *2A
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMST3906
40 V, 200 mA PNP switching transistor
Name Description Version
[1]
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
collector-base voltage open emitter - −40 V
collector-emitter voltage open base - −40 V
emitter-base voltage open collector - −6V
collector current - −200 mA
peak collector current single pulse;
peak base current single pulse;
total power dissipation T
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
footprint.
6. Thermal characteristics
t
≤ 1ms
p
t
≤ 1ms
p
amb
≤ 25 °C
- −200 mA
- −100 mA
[1]
- 200 mW
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
in free air
[1]
- - 625 K/W
to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 2 of 10
NXP Semiconductors
7. Characteristics
Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
t
d
t
r
t
on
t
s
t
f
t
off
C
c
C
e
f
T
NF noise figure I
PMST3906
40 V, 200 mA PNP switching transistor
=25°C unless otherwise specified.
collector-basecut-off
current
emitter-base cut-off
current
DC current gain VCE= −1V
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time IC= −10 mA;
rise time - - 35 ns
turn-on time - - 70 ns
storage time - - 225 ns
fall time - - 75 ns
turn-off time - - 300 ns
collector capacitance IE=ie=0A;VCB= −5V;
emitter capacitance IC=ic=0A;
transition frequency IC= −10 mA;
IE= 0 A; VCB= −30 V - - −50 nA
IC= 0 A; VEB= −6V - - −50 nA
= −0.1 mA 60 - -
I
C
= −1mA 80 - -
I
C
= −10 mA 100 - 300
I
C
= −50 mA 60 - -
I
C
= −100 mA 30 - -
I
C
IC= −10 mA; IB= −1mA - - −250 mV
= −50 mA; IB= −5mA - - −400 mV
I
C
IC= −10 mA; IB= −1mA - - −850 mV
= −50 mA; IB= −5mA - - −950 mV
I
C
--35ns
I
= −1 mA;
Bon
I
=1mA
Boff
- - 4.5 pF
f=1MHz
--10pF
V
= −500 mV;
EB
f=1MHz
250 - - MHz
V
= −20 V;
CE
f = 100 MHz
= −100 µA;
C
V
= −5 V; RS=1kΩ;
CE
--4dB
f = 10 Hz to 15.7 kHz
PMST3906_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 29 April 2009 3 of 10
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