NXP PMST3904 Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
PMST3904
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Jan 21
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
FEATURES
• Collector current capability IC = 200 mA
• Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
• General amplification and switching.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST3906.
MARKING
T YPE NUMBER MARKING CODE
(1)
PMST3904 ∗1A
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
I
CEO
C
collector-emitter voltage 40 V
collector current (DC) 200 mA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
3
1
1
2
MAM062
2
Fig.1 Simplified outline (SOT323) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMST3904 − plastic surface mounted packag e; 3 leads SOT323
2004 Jan 21 2
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 200 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21 3
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