NXP PMSS3904 Schematic [ru]
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D187
PMSS3904
NPN switching transistor
Product data sheet
Supersedes data of 1997 Sep 03
1999 May 27
NXP Semiconductors Product data sheet
NPN switching transistor PMSS3904
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching and amplification
• Telephony and professional communication equipment.
DESCRIPTION
NPN switching transistor in an SC-70 (SOT323) plastic
package. PNP complement: PMSS3906.
MARKING CODE
T YPE NUMBER MARKING CODE
(1)
PMSS3904 ∗04
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SC-70; SOT323)
and symbol.
3
2
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 27 2
NXP Semiconductors Product data sheet
NPN switching transistor PMSS3904
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure IC = 100 μA; VCE = 5 V; RS = 1 kΩ
Switching times (between 10% and 90% levels); see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE = 0; VCB = 30 V − 50 nA
IE = 0; VCB = 30 V; Tj = 150 °C − 10 μA
emitter cut-off current IC = 0; VEB = 5 V − 50 nA
DC current gain VCE = 1 V; see Fig.2
IC = 0.1 mA 40 −
IC = 1 mA 70 −
IC = 10 mA 100 300
IC = 50 mA; note 1 60 −
IC = 100 mA; note 1 30 −
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV
IC = 50 mA; IB = 5 mA; note 1 − 300 mV
base-emitter saturation vo ltage IC = 10 mA; IB = 1 mA 650 850 mV
IC = 50 mA; IB = 5 mA; note 1 − 950 mV
collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF
emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 12 pF
transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 180 − MHz
− 5 dB
f = 10 Hz to 15.7 KHz
turn-on time I
delay time − 50 ns
rise time − 60 ns
= 10 mA; I
Con
I
= − 1 mA; VCC = 3 V;
Boff
Bon
VBB = −1.9 V
= 1 mA;
− 110 ns
turn-off time − 1200 ns
storage time − 1000 ns
fall time − 200 ns
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 May 27 3
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