NXP PMSS3904 Schematic [ru]

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D187

PMSS3904

NPN switching transistor

Product data sheet
Supersedes data of 1997 Sep 03

1999 May 27

NXP Semiconductors Product data sheet

NPN switching transistor PMSS3904

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• General purpose switching and amplification

• Telephony and professional communication equipment.

DESCRIPTION

NPN switching transistor in an SC-70 (SOT323) plastic
package. PNP complement: PMSS3906.

MARKING CODE

T YPE NUMBER MARKING CODE

(1)

PMSS3904 ∗04

Note

1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

1

1

2

MAM062

Fig.1 Simplified outline (SC-70; SOT323)

and symbol.

3

2

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 May 27 2

NXP Semiconductors Product data sheet

NPN switching transistor PMSS3904

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

c

C

e

f

T

F noise figure IC = 100 μA; VCE = 5 V; RS = 1 kΩ

Switching times (between 10% and 90% levels); see Fig.3
t

on

t

d

t

r

t

off

t

s

t

f

thermal resistance from junction to ambient note 1 625 K/W

collector cut-off current IE = 0; VCB = 30 V − 50 nA

IE = 0; VCB = 30 V; Tj = 150 °C − 10 μA
emitter cut-off current IC = 0; VEB = 5 V − 50 nA
DC current gain VCE = 1 V; see Fig.2

IC = 0.1 mA 40 −
IC = 1 mA 70 −
IC = 10 mA 100 300
IC = 50 mA; note 1 60 −
IC = 100 mA; note 1 30 −

collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV

IC = 50 mA; IB = 5 mA; note 1 − 300 mV
base-emitter saturation vo ltage IC = 10 mA; IB = 1 mA 650 850 mV

IC = 50 mA; IB = 5 mA; note 1 − 950 mV
collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF
emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 12 pF
transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 180 − MHz

− 5 dB

f = 10 Hz to 15.7 KHz

turn-on time I
delay time − 50 ns
rise time − 60 ns

= 10 mA; I

Con

I

= − 1 mA; VCC = 3 V;

Boff

Bon

VBB = −1.9 V

= 1 mA;

− 110 ns

turn-off time − 1200 ns
storage time − 1000 ns
fall time − 200 ns

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

1999 May 27 3

NXP Semiconductors Product data sheet

V

V

NPN switching transistor PMSS3904

300

handbook, full pagewidth

h

FE

200

100

0

−2

10

MBH724

VCE = 5 V

−1

10

1

10 10

2

10

IC (mA)

3

Fig.2 DC gain current; typical values.

BB

handbook, full pagewidth

oscilloscope

V

i

(probe)

450 Ω

R2

R

B

CC

R

C

V

(probe)

o

450 Ω

oscilloscope

DUT

R1

MLB826

Vi = 5 V; T = 500 μs; tp = 10 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
Oscilloscope: input impedance Zi = 50 Ω.

Fig.3 Test circuit for switching times.

1999 May 27 4

NXP Semiconductors Product data sheet

3

NPN switching transistor PMSS3904

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT32

D

y

3

A

12

e

b

1

p

e

B

w

M

E

AB

X

H

E

Q

A

1

L

p

detail X

v

M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

max

0.1

b

cD

p

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

E

1.35

1.3

1.15

REFERENCES

e

e1H

0.65

2.2

2.0

L

Qwv

p

E

0.45

0.15

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

1999 May 27 5

NXP Semiconductors Product data sheet

NPN switching transistor PMSS3904

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

1999 May 27 6

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.

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© NXP B.V. 2009
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The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property right s.

Printed in The Netherlands 115002/04/pp7 Date of release: 1999 May 27 Document order numbe r : 9397 750 05965