NXP BT 169B NXP Datasheet
TO-92
123
sym037
AK
G
BT169 series
Thyristors logic level
Rev. 5 — 30 September 2011 Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features and benefits
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
General purpose switching and phase control applications.
1.4 Quick reference data
V
V
V
DRM
DRM
DRM
, V
200 V (BT169B) I
RRM
, V
400 V (BT169D) I
RRM
, V
600 V (BT169G) I
RRM
T(RMS)
T(AV)
8 A
TSM
0.8 A
0.5 A
2. Pinning information
Table 1. Discrete pinning
Pin Description Simplified outline Symbol
1 anode (a)
2 gate (g)
3 cathode (k)
SOT54 (TO-92)
NXP Semiconductors
3. Ordering information
BT169 series
Thyristor logic level
Table 2. Ordering information
Type number Package
Name Description Version
BT169B - plastic single-ended leaded (through hole) package; 3 leads SOT54
BT169D
BT169G
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
, V
V
DRM
RRM
I
T(AV)
I
T(RMS)
I
TSM
2
tI
I
/dt repetitive rate of rise of on-state
dI
T
repetitive peak off-state voltages
average on-state current half sine wave;
RMS on-state current all conduction angles;
non-repetitive peak on-state current half sine wave;
2
current after triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
peak gate current - 1 A
peak gate voltage - 5 V
peak reverse gate voltage - 5 V
peak gate power - 2 W
average gate power over any 20 ms period - 0.1 W
storage temperature 40 +150 C
junction temperature - 125 C
[1]
BT169B
BT169D
BT169G
-200V
[1]
-400V
[1]
-600V
-0.5A
83 C;
T
lead
see Figure 1
-0.8A
see Figure 4
and 5
Tj=25C prior to
surge;
see Figure 2
and 3
t = 10 ms - 8 A
t = 8.3 ms - 9 A
t for fusing t = 10 ms - 0.32 A2s
ITM = 2 A; IG = 10 mA;
/dt = 100 mA/s
dI
G
-50A/s
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 2 of 13
NXP Semiconductors
001aab446
0.4
0.2
0.6
0.8
P
tot
(W)
0
101
113
89
77
125
I
T(AV)
(A)
0 0.60.40.20.1 0.50.3
4
a =
1.57
2.2
1.9
2.8
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
T
lead(max)
(°C)
001aab499
4
6
2
8
10
I
TSM
(A)
0
number of cycles
1 10
3
10
2
10
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
BT169 series
Thyristor logic level
a = form factor = I
T(RMS)/IT(AV)
.
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
f = 50 Hz.
Fig 2. Non-repetitive peak on-sta te cu rrent as a function of the number of sinusoidal current cycles; maximum
values.
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 3 of 13
NXP Semiconductors
001aab497
tp (s)
10
−5
10
−2
10
−3
10
−4
10
2
10
10
3
I
TSM
(A)
1
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
001aab449
1
0.5
1.5
2
I
T(RMS)
(A)
0
surge duration (s)
10
−2
10
−1
101
T
lead
(°C)
−50 150100050
001aab450
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
(1)
BT169 series
Thyristor logic level
tp 10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values.
f = 50 Hz; T
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents.
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 4 of 13
83 C. (1) T
lead
Fig 5. RMS on-state current as a function of lead
= 83 C.
lead
temperature; maximum values.
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