NXP BT 169B NXP Datasheet

Page 1
TO-92
123
sym037
AK
G
BT169 series
Thyristors logic level
Rev. 5 — 30 September 2011 Product data sheet

1. Product profile

1.1 General description

Passivated, sensitive gate thyristors in a SOT54 plastic package.

1.2 Features and benefits

Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.

1.3 Applications

1.4 Quick reference data

VVV
DRM DRM DRM
, V
200 V (BT169B) I
RRM
, V
400 V (BT169D) I
RRM
, V
600 V (BT169G) I
RRM
T(RMS) T(AV)
8 A
TSM
0.8 A
0.5 A

2. Pinning information

Table 1. Discrete pinning
Pin Description Simplified outline Symbol
1 anode (a) 2 gate (g) 3 cathode (k)
SOT54 (TO-92)
Page 2
NXP Semiconductors

3. Ordering information

BT169 series
Thyristor logic level
Table 2. Ordering information
Type number Package
Name Description Version
BT169B - plastic single-ended leaded (through hole) package; 3 leads SOT54 BT169D BT169G

4. Limiting values

Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
, V
V
DRM
RRM
I
T(AV)
I
T(RMS)
I
TSM
2
tI
I
/dt repetitive rate of rise of on-state
dI
T
repetitive peak off-state voltages
average on-state current half sine wave;
RMS on-state current all conduction angles;
non-repetitive peak on-state current half sine wave;
2
current after triggering I V V P P T T
GM
GM RGM GM G(AV) stg j
peak gate current - 1 A
peak gate voltage - 5 V
peak reverse gate voltage - 5 V
peak gate power - 2 W
average gate power over any 20 ms period - 0.1 W
storage temperature 40 +150 C
junction temperature - 125 C
[1]
BT169B BT169D BT169G
-200V
[1]
-400V
[1]
-600V
-0.5A
83 C;
T
lead
see Figure 1
-0.8A
see Figure 4
and 5
Tj=25C prior to surge; see Figure 2
and 3 t = 10 ms - 8 A t = 8.3 ms - 9 A
t for fusing t = 10 ms - 0.32 A2s
ITM = 2 A; IG = 10 mA;
/dt = 100 mA/s
dI
G
-50A/s
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 2 of 13
Page 3
NXP Semiconductors
001aab446
0.4
0.2
0.6
0.8
P
tot
(W)
0
101
113
89
77
125
I
T(AV)
(A)
0 0.60.40.20.1 0.50.3
4
a =
1.57
2.2
1.9
2.8
conduction
angle
(degrees)
form
factor
a
30 60
90 120 180
4
2.8
2.2
1.9
1.57
α
T
lead(max)
(°C)
001aab499
4
6
2
8
10
I
TSM
(A)
0
number of cycles
1 10
3
10
2
10
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
BT169 series
Thyristor logic level
a = form factor = I
T(RMS)/IT(AV)
.
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
f = 50 Hz.
Fig 2. Non-repetitive peak on-sta te cu rrent as a function of the number of sinusoidal current cycles; maximum
values.
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 3 of 13
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NXP Semiconductors
001aab497
tp (s)
10
5
10
2
10
3
10
4
10
2
10
10
3
I
TSM
(A)
1
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
001aab449
1
0.5
1.5
2
I
T(RMS)
(A)
0
surge duration (s)
10
2
10
1
101
T
lead
(°C)
50 150100050
001aab450
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
(1)
BT169 series
Thyristor logic level
tp 10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
values.
f = 50 Hz; T
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents.
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 4 of 13
83 C. (1) T
lead
Fig 5. RMS on-state current as a function of lead
= 83 C.
lead
temperature; maximum values.
Page 5
NXP Semiconductors
001aab451
1
10
2
10
1
10
Z
th(j-lead)
(K/W)
10
2
tp (s)
10
5
11010
1
10
2
10
4
10
3
t
p
t
p
T
P
t
T
δ =

5. Thermal characteristics

BT169 series
Thyristor logic level
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-lead)
thermal resistance from junc tion to
--60K/W
lead
R
th(j-a)
thermal resistance from junc tion to ambient
printed-circuit board mounted; lead length = 4 mm
-150-K/W
Fig 6. T ra nsient thermal impedance as a function of pulse widt h .
Product data sheet Rev. 5 — 30 September 2011 5 of 13
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
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6. Characteristics

BT169 series
Thyristor logic level
Table 5. Characteristics
Tj = 25 C unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current VD = 12 V; IT = 10 mA;
-50200A
gate open circuit; see Figure 8
I
L
latching current VD = 12 V; IGT = 0.5 mA;
- 26mA
RGK=1k; see Figure 10
I
H
holding current VD = 12 V; IGT = 0.5 mA;
- 25mA
RGK=1k; see Figure 11
V
T
V
GT
on-state voltage IT = 1.2 A - 1.25 1.7 V gate trigger voltage IT = 10 mA; gate open circuit;
see Figure 7
VD = 12 V - 0.5 0.8 V
= V
V
D
DRM(max)
, I
I
D
R
off-state leakage current
VD = V
DRM(max)
Tj= 125 C; RGK = 1 k
; Tj = 125 C0.20.3-V
; VR = V
RRM(max)
;
- 0.05 0.1 mA
Dynamic characteristi cs
/dt critical rate of rise of
dV
D
off-state voltage
VDM = 67 % V
DRM(max)
exponential waveform;
; Tj = 125 C;
see Figure 12
RGK = 1 k 500 800 - V/s gate open circuit - 25 - V/s
t
gt
gate controlled turn-on time
t
q
circuit commuted turn-off time
ITM = 2 A; VD = V
DRM(max)
;
IG=10mA; dIG/dt = 0.1 A/s VD = 67 % V
= 1.6 A; VR = 35 V;
I
TM
/dt = 30 A/s; dVD/dt = 2 V/s;
dI
TM
DRM(max)
; Tj = 125 C;
-2-s
-100-s
RGK = 1 k
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 6 of 13
Page 7
NXP Semiconductors
Tj (°C)
50 150100050
001aab501
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
Tj (°C)
50 150100050
001aab502
1
2
3
0
I
GT
I
GT(25°C)
001aab454
VT (V)
0.4 2.821.2
2
3
1
4
5
I
T
(A)
0
(1) (2) (3)
Tj (°C)
50 150100050
001aab503
1
2
3
0
I
L
I
L(25°C)
BT169 series
Thyristor logic level
Fig 7. Normalized gate trigger voltage as a function of
junction temperature.
VO = 1.067 V.
= 0.187 .
R
S
= 125 C; typical values.
(1) T
j
= 125 C; maximum values.
(2) T
j
(3) T
= 25 C; maximum values.
j
Fig 8. Normalized gate trigger current as a function
junction temperature.
R
= 1 k.
GK
Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of
junction temperature.
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Product data sheet Rev. 5 — 30 September 2011 7 of 13
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NXP Semiconductors
Tj (°C)
50 150100050
001aab504
1
2
3
0
I
H
I
H(25°C)
001aab507
Tj (°C)
0 15010050
10
3
10
2
10
4
dVD/dt
(V/μs)
10
(1)
(2)
BT169 series
Thyristor logic level
RGK = 1 k.(1)R
Fig 11. Normalized holding current as a function of
junction temperature.

7. Package information

Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.
= 1 k.
GK
(2) Gate open circuit.
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values.
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Product data sheet Rev. 5 — 30 September 2011 8 of 13
Page 9
NXP Semiconductors
UNIT
A
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e
1
1.27
L
1
(1)
max.
2.5
b
1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A
04-06-28 04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b
1
L
1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e
1
e
1
2
3
BT169 series
Thyristor logic level

8. Package outline

Fig 13. Package outline SOT54 (TO-92).
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 9 of 13
Page 10
NXP Semiconductors
BT169 series
Thyristor logic level

9. Revision history

Table 6. Revision history
Document ID Release date Data sheet status Change notice Order number Supersedes
BT169_SERIES v.5 20110930 Product data sheet - 9397 750 13512 BT169_SERIES v.4 Modifications:
BT169_SERIES v.4 20040823 Product data sheet - 9397 750 13512 BT169_SERIES v.3 Modifications:
BT169_SERIES v.3 20010902 Product specification - not applicable B T169_SERIES v.2 BT169_SERIES v.2 20010901 Product specification - not applicable B T169_SERIES v.1 BT169_SERIES v.1 19970901 Product specification - not applicable -
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Section 1.4 “Quick reference data”: BT169E obsolete, removed from list.
Table 2 “Ordering information”: BT169E obsolete, removed from table.
Table 3 “Limiting values”: BT169E obsolete, removed from table.
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 10 of 13
Page 11
NXP Semiconductors
BT169 series
Thyristor logic level

10. Legal information

10.1 Data sheet status

Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition

10.2 Definitions

Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

10.3 Disclaimers

Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
, unless otherwise
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 11 of 13
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NXP Semiconductors
BT169 series
Thyristor logic level
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neit her qua lif ied nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, custome r (a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct claims result ing from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

10.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

11. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BT169_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 30 September 2011 12 of 13
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12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
7 Package information . . . . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Contact information. . . . . . . . . . . . . . . . . . . . . 12
12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
BT169 series
Thyristor logic level
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 September 2011
Document identifier: BT169_SER
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