NXP BT 151-650R NXP Datasheet
BT151 series L and R
Thyristors
Rev. 04 — 23 October 2006 Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT78 plastic package.
1.2 Features
n High thermal cycling performance n High bidirectional blocking voltage
1.3 Applications
n Motor control n Static switching
n Ignition circuits n Protection circuits
1.4 Quick reference data
n V
n V
n V
n V
n V
n V
≤ 500 V (BT151-500L/R) n I
DRM
≤ 500 V (BT151-500L/R) n I
RRM
≤ 650 V (BT151-650L/R) n I
DRM
≤ 650 V (BT151-650L/R) n IGT≤ 5 mA (BT151 series L)
RRM
≤ 800 V (BT151-800R) n IGT≤ 15 mA (BT151 series R)
DRM
≤ 800 V (BT151-800R)
RRM
≤ 120 A (t = 10 ms)
TSM
≤ 12 A
T(RMS)
≤ 7.5 A
T(AV)
2. Pinning information
Table 1. Pinning
Pin Description Simplified outline Symbol
1 cathode (K)
2 anode (A)
3 gate (G)
mb mounting base; connected to anode
AK
G
sym037
12mb3
SOT78 (3-lead TO-220AB)
NXP Semiconductors
BT151 series L and R
Thyristors
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
BT151-500L SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole;
BT151-500R
3-lead TO-220AB
SOT78
BT151-650L
BT151-650R
BT151-800R
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage BT151-500L; BT151-500R
BT151-650L; BT151-650R
BT151-800R - 800 V
V
RRM
repetitive peak reverse voltage BT151-500L; BT151-500R
BT151-650L; BT151-650R
BT151-800R - 800 V
I
T(AV)
I
T(RMS)
I
TSM
average on-state current half sine wave; Tmb≤ 109 °C;
see
Figure 1
RMS on-state current all conductionangles;seeFigure 4
and
5
non-repetitive peak on-state
current
half sine wave; Tj=25°C prior to
surge; see
Figure 2 and 3
t=10ms - 120 A
t = 8.3 ms - 132 A
2
tI
I
/dt rate of rise of on-state current ITM= 20 A; IG=50mA;
dI
T
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
t for fusing t = 10 ms - 72 A2s
dI
/dt = 50 mA/µs
G
peak gate current - 2 A
peak reverse gate voltage - 5 V
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature −40 +150 °C
junction temperature - 125 °C
[1]
- 500 V
[1]
- 650 V
[1]
- 500 V
[1]
- 650 V
- 7.5 A
-12 A
-50 A/µs
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthethyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 2 of 12
NXP Semiconductors
BT151 series L and R
Thyristors
15
P
tot
(W)
10
5
0
0 8642
Form factor a = I
T(RMS)/IT(AV)
2.2
2.8
4
conduction
angle
(degrees)
120
180
1.9
form
factor
a
30
60
90
4
2.8
2.2
1.9
1.57
Fig 1. Total power dissipation as a function of average on-state current; maximum values
160
I
TSM
(A)
120
I
T
Tj initial = 25 °C max
I
T(AV)
t
p
α
(A)
001aaa958
a =
1.57
001aaa957
I
TSM
t
105.5
T
mb(max)
(°C)
112
118.5
125
80
40
0
1 10
10
2
10
n
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 3 of 12
NXP Semiconductors
BT151 series L and R
Thyristors
t
p
001aaa956
I
TSM
t
−2
10
I
TSM
(A)
3
10
dlT/dt limit
2
10
I
T
Tj initial = 25 °C max
10
−5
10
−4
10
−3
10
tp (s)
tp≤ 10 ms
Fig 3. Non-repetitivepeak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aaa999
I
T(RMS)
(A)
25
20
001aaa954
I
T(RMS)
(A)
16
12
15
10
5
0
−2
10
−1
surge duration (s)
10110
f = 50 Hz; Tmb≤ 109 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
8
4
0
−50 150100050
Tmb (°C)
Fig 5. RMSon-statecurrentas a function of mounting
base temperature; maximum values
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 4 of 12
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