NXP BT 151-650R NXP Datasheet

BT151 series L and R

Thyristors

Rev. 04 — 23 October 2006 Product data sheet

1. Product profile

1.1 General description

Passivated thyristors in a SOT78 plastic package.

1.2 Features

n High thermal cycling performance n High bidirectional blocking voltage

1.3 Applications

n Motor control n Static switching
n Ignition circuits n Protection circuits

1.4 Quick reference data

n V
n V
n V
n V
n V
n V

≤ 500 V (BT151-500L/R) n I

DRM

≤ 500 V (BT151-500L/R) n I

RRM

≤ 650 V (BT151-650L/R) n I

DRM

≤ 650 V (BT151-650L/R) n IGT≤ 5 mA (BT151 series L)

RRM

≤ 800 V (BT151-800R) n IGT≤ 15 mA (BT151 series R)

DRM

≤ 800 V (BT151-800R)

RRM

≤ 120 A (t = 10 ms)

TSM

≤ 12 A

T(RMS)

≤ 7.5 A

T(AV)

2. Pinning information

Table 1. Pinning

Pin Description Simplified outline Symbol

1 cathode (K)
2 anode (A)
3 gate (G)
mb mounting base; connected to anode

AK

G

sym037

12mb3

SOT78 (3-lead TO-220AB)

NXP Semiconductors

BT151 series L and R

Thyristors

3. Ordering information

Table 2. Ordering information

Type number Package

Name Description Version

BT151-500L SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole;
BT151-500R

3-lead TO-220AB

SOT78

BT151-650L
BT151-650R
BT151-800R

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DRM

repetitive peak off-state voltage BT151-500L; BT151-500R

BT151-650L; BT151-650R
BT151-800R - 800 V

V

RRM

repetitive peak reverse voltage BT151-500L; BT151-500R

BT151-650L; BT151-650R
BT151-800R - 800 V

I

T(AV)

I

T(RMS)

I

TSM

average on-state current half sine wave; Tmb≤ 109 °C;

see

Figure 1

RMS on-state current all conductionangles;seeFigure 4

and

5

non-repetitive peak on-state
current

half sine wave; Tj=25°C prior to
surge; see

Figure 2 and 3

t=10ms - 120 A
t = 8.3 ms - 132 A

2

tI

I

/dt rate of rise of on-state current ITM= 20 A; IG=50mA;

dI

T

I

GM

V

RGM

P

GM

P

G(AV)

T

stg

T

j

2

t for fusing t = 10 ms - 72 A2s

dI

/dt = 50 mA/µs

G

peak gate current - 2 A
peak reverse gate voltage - 5 V
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature −40 +150 °C
junction temperature - 125 °C

[1]

- 500 V

[1]

- 650 V

[1]

- 500 V

[1]

- 650 V

- 7.5 A

-12 A

-50 A/µs

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthethyristor may switch to the on-state.

The rate of rise of current should not exceed 15 A/µs.

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 2 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

15

P

tot

(W)

10

5

0

0 8642

Form factor a = I

T(RMS)/IT(AV)

2.2

2.8

4

conduction

angle

(degrees)

120
180

1.9

form

factor

a

30
60
90

4

2.8

2.2

1.9

1.57

Fig 1. Total power dissipation as a function of average on-state current; maximum values

160

I

TSM

(A)

120

I

T

Tj initial = 25 °C max

I

T(AV)

t

p

α

(A)

001aaa958

a =

1.57

001aaa957

I

TSM

t

105.5

T

mb(max)

(°C)

112

118.5

125

80

40

0

1 10

10

2

10

n

3

f = 50 Hz

Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 3 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

t

p

001aaa956

I

TSM

t

−2

10

I

TSM

(A)

3

10

dlT/dt limit

2

10

I

T

Tj initial = 25 °C max

10

−5

10

−4

10

−3

10

tp (s)

tp≤ 10 ms

Fig 3. Non-repetitivepeak on-state current as a function of pulse width for sinusoidal currents; maximum values

001aaa999

I

T(RMS)

(A)

25

20

001aaa954

I

T(RMS)

(A)

16

12

15

10

5

0

−2

10

−1

surge duration (s)

10110

f = 50 Hz; Tmb≤ 109 °C

Fig 4. RMS on-state current as a function of surge

duration; maximum values

8

4

0

−50 150100050
Tmb (°C)

Fig 5. RMSon-statecurrentas a function of mounting

base temperature; maximum values

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 4 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

5. Thermal characteristics

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to
mounting base

thermal resistance from junction to
ambient

see Figure 6 - - 1.3 K/W

in free air - 60 - K/W

10

Z

th(j-mb)
(K/W)

1

−1

10

P

−2

10

t

p

T

−3

10

−5

10

−4

10

−3

10

−2

10

−1

11010

tp (s)

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width

001aaa962

t

p

δ =

T

t

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 5 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

6. Characteristics

Table 5. Characteristics

Tj = 25°C unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

I

GT

I

L

I

H

V

T

V

GT

I

D

I

R

Dynamic characteristics

/dt rate of rise of off-state

dV

D

t

gt

t

q

gate trigger current VD= 12 V; IT= 100 mA; see Figure 8

BT151-500L - 2 5 mA
BT151-500R - 2 15 mA
BT151-650L - 2 5 mA
BT151-650R - 2 15 mA
BT151-800R - 2 15 mA

latching current VD= 12 V; IGT= 100 mA; see

- 1040mA

Figure 10

holding current VD= 12 V; IGT= 100 mA; see

- 7 20 mA

Figure 11

on-state voltage IT= 23 A; see Figure 9 - 1.4 1.75 V
gate trigger voltage IT= 100 mA; VD= 12 V; see Figure 7 - 0.6 1.5 V

= 100 mA; VD=V

I

T

T

= 125 °C

j

off-state current VD=V
reverse current VR=V

VDM= 0.67 × V
voltage

exponential waveform; see

R

GK

DRM(max)

DRM(max)
RRM(max)

; Tj= 125 °C - 0.1 0.5 mA
; Tj= 125 °C - 0.1 0.5 mA

DRM(max)

= 100 Ω 200 1000 - V/µs

;

; Tj= 125 °C;

Figure 12

0.25 0.4 - V

gate open circuit 50 130 - V/µs

gate-controlled turn-on
time

commutated turn-off
time

ITM= 40 A; VD=V

I

= 100 mA; dIG/dt = 5 A/µs

G

VDM= 0.67 × V

I

= 20 A; VR=25V;

TM

(dI

/dt)M=30A/µs; dVD/dt = 50 V/µs;

T

R

= 100 Ω

GK

DRM(max)

DRM(max)

;

; Tj= 125 °C;

-2-µs

-70-µs

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 6 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

1.6

V

GT

V

GT(25°C)

1.2

0.8

0.4

−50 150100050

001aaa953

Tj (°C)

Fig 7. Normalizedgatetrigger voltageas a function of

junction temperature

001aaa959

(A)

30

I

T

3

I

GT

I

GT(25°C)

2

1

0

−50 150100050

001aaa952

Tj (°C)

Fig 8. Normalizedgate trigger current as a function of

junction temperature

001aaa951

I

I

L(25°C)

3

L

20

(3)(2)(1)

10

0

021.50.5 1
VT (V)

Vo= 1.06 V

Rs= 0.0304 Ω
(1) Tj= 125 °C; typical values
(2) Tj= 125 °C; maximum values
(3) Tj=25°C; maximum values

Fig 9. On-state current as a function of on-state

voltage

2

1

0

−50 150100050
Tj (°C)

Fig 10. Normalized latching current as a function of

junction temperature

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 7 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

3

I

H

I

H(25°C)

2

1

0

−50 150100050

001aaa950

Tj (°C)

Fig 11. Normalized holding current as a function of

junction temperature

4

10

dVD/dt

(V/µs)

3

10

2

10

10

0 15010050

(1)

(2)

001aaa949

(°C)

T

j

(1) RGK= 100 Ω
(2) Gate open circuit

Fig 12. Critical rate of rise of off-state voltage as a

function of junction temperature; minimum
values

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 8 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

p

A

1

q

D

1

D

L

1

b

L

1

L

2

mounting

base

Q

123

b

e

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

L

b

A

4.7

4.1

A

1.40

1.25

1

UNIT

mm

OUTLINE

VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.45

1.00

0.7

0.4

0.9

0.6

IEC JEDEC JEITA

D

D

16.0

6.6

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

12.8

3.30

2.79

2

L

1

max.

3.0

p

qQ

3.8

3.0

3.5

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

05-03-22
05-10-25

Fig 13. Package outline SOT78 (TO-220AB)

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 9 of 12

NXP Semiconductors

BT151 series L and R

Thyristors

8. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BT151_SER_L_R_4 20061023 Product data sheet - BT151_SERIES_3
Modifications:

BT151_SERIES_3
(9397 750 13159)

BT151_SERIES_2 19990601 Product specification - BT151_SERIES_1
BT151_SERIES_1 19970901 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Added type numbers BT151-500L and BT151-650L

20040607 Product specification - BT151_SERIES_2

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 10 of 12

NXP Semiconductors

9. Legal information

9.1 Data sheet status

BT151 series L and R

Thyristors

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus of device(s) described in this documentmay have changedsince this document was published and may differin case of multiple devices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shallhave noliability for theconsequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product typenumber(s) and title.A short datasheet is intended
for quickreference only andshould not be reliedupon to contain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does notgive any representationsor
warranties, expressed or implied,as to the accuracyor completeness ofsuch
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reservesthe right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. Thisdocument supersedes and replacesall information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction ofa NXP Semiconductorsproduct canreasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the AbsoluteMaximum Ratings System ofIEC 60134) may causepermanent
damage tothe device. Limitingvalues are stressratings only andoperation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the generalterms and conditions ofcommercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implicationof any license underany copyrights, patents
or other industrial or intellectual property rights.

9.4 Trademarks

Notice: Allreferenced brands,product names,service namesand trademarks
are the property of their respective owners.

10. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.

Product data sheet Rev. 04 — 23 October 2006 11 of 12

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Contact information. . . . . . . . . . . . . . . . . . . . . 11

11 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BT151 series L and R

Thyristors

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2006. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 23 October 2006

Document identifier: BT151_SER_L_R_4