NXP BT 151-650R NXP Datasheet

Page 1
BT151 series L and R
Rev. 04 — 23 October 2006 Product data sheet
1. Product profile

1.1 General description

Passivated thyristors in a SOT78 plastic package.

1.2 Features

n High thermal cycling performance n High bidirectional blocking voltage

1.3 Applications

n Motor control n Static switching n Ignition circuits n Protection circuits

1.4 Quick reference data

n V n V n V n V n V n V
500 V (BT151-500L/R) n I
DRM
500 V (BT151-500L/R) n I
RRM
650 V (BT151-650L/R) n I
DRM
650 V (BT151-650L/R) n IGT≤ 5 mA (BT151 series L)
RRM
800 V (BT151-800R) n IGT≤ 15 mA (BT151 series R)
DRM
800 V (BT151-800R)
RRM
120 A (t = 10 ms)
TSM
12 A
T(RMS)
7.5 A
T(AV)

2. Pinning information

Table 1. Pinning
Pin Description Simplified outline Symbol
1 cathode (K) 2 anode (A) 3 gate (G) mb mounting base; connected to anode
AK
G
sym037
12mb3
SOT78 (3-lead TO-220AB)
Page 2
NXP Semiconductors
BT151 series L and R
Thyristors

3. Ordering information

Table 2. Ordering information
Type number Package
Name Description Version
BT151-500L SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; BT151-500R
3-lead TO-220AB
SOT78
BT151-650L BT151-650R BT151-800R

4. Limiting values

Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage BT151-500L; BT151-500R
BT151-650L; BT151-650R BT151-800R - 800 V
V
RRM
repetitive peak reverse voltage BT151-500L; BT151-500R
BT151-650L; BT151-650R BT151-800R - 800 V
I
T(AV)
I
T(RMS)
I
TSM
average on-state current half sine wave; Tmb≤ 109 °C;
see
Figure 1
RMS on-state current all conductionangles;seeFigure 4
and
5
non-repetitive peak on-state current
half sine wave; Tj=25°C prior to surge; see
Figure 2 and 3
t=10ms - 120 A t = 8.3 ms - 132 A
2
tI
I
/dt rate of rise of on-state current ITM= 20 A; IG=50mA;
dI
T
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
t for fusing t = 10 ms - 72 A2s
dI
/dt = 50 mA/µs
G
peak gate current - 2 A peak reverse gate voltage - 5 V peak gate power - 5 W average gate power over any 20 ms period - 0.5 W storage temperature 40 +150 °C junction temperature - 125 °C
[1]
- 500 V
[1]
- 650 V
[1]
- 500 V
[1]
- 650 V
- 7.5 A
-12 A
-50 A/µs
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthethyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 2 of 12
Page 3
NXP Semiconductors
BT151 series L and R
Thyristors
15
P
tot
(W)
10
5
0
0 8642
Form factor a = I
T(RMS)/IT(AV)
2.2
2.8
4
conduction
angle
(degrees)
120 180
1.9
form
factor
a
30 60 90
4
2.8
2.2
1.9
1.57
Fig 1. Total power dissipation as a function of average on-state current; maximum values
160
I
TSM
(A)
120
I
T
Tj initial = 25 °C max
I
T(AV)
t
p
α
(A)
001aaa958
a =
1.57
001aaa957
I
TSM
t
105.5
T
mb(max)
(°C)
112
118.5
125
80
40
0
1 10
10
2
10
n
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 3 of 12
Page 4
NXP Semiconductors
BT151 series L and R
Thyristors
t
p
001aaa956
I
TSM
t
2
10
I
TSM
(A)
3
10
dlT/dt limit
2
10
I
T
Tj initial = 25 °C max
10
5
10
4
10
3
10
tp (s)
tp≤ 10 ms
Fig 3. Non-repetitivepeak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aaa999
I
T(RMS)
(A)
25
20
001aaa954
I
T(RMS)
(A)
16
12
15
10
5
0
2
10
1
surge duration (s)
10110
f = 50 Hz; Tmb≤ 109 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
8
4
0
50 150100050 Tmb (°C)
Fig 5. RMSon-statecurrentas a function of mounting
base temperature; maximum values
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 4 of 12
Page 5
NXP Semiconductors
BT151 series L and R
Thyristors

5. Thermal characteristics

Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
R
th(j-a)
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
see Figure 6 - - 1.3 K/W
in free air - 60 - K/W
10
Z
th(j-mb) (K/W)
1
1
10
P
2
10
t
p
T
3
10
5
10
4
10
3
10
2
10
1
11010
tp (s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
001aaa962
t
p
δ =
T
t
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 5 of 12
Page 6
NXP Semiconductors
BT151 series L and R
Thyristors

6. Characteristics

Table 5. Characteristics
Tj = 25°C unless otherwise stated.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
I
L
I
H
V
T
V
GT
I
D
I
R
Dynamic characteristics
/dt rate of rise of off-state
dV
D
t
gt
t
q
gate trigger current VD= 12 V; IT= 100 mA; see Figure 8
BT151-500L - 2 5 mA BT151-500R - 2 15 mA BT151-650L - 2 5 mA BT151-650R - 2 15 mA BT151-800R - 2 15 mA
latching current VD= 12 V; IGT= 100 mA; see
- 1040mA
Figure 10
holding current VD= 12 V; IGT= 100 mA; see
- 7 20 mA
Figure 11
on-state voltage IT= 23 A; see Figure 9 - 1.4 1.75 V gate trigger voltage IT= 100 mA; VD= 12 V; see Figure 7 - 0.6 1.5 V
= 100 mA; VD=V
I
T
T
= 125 °C
j
off-state current VD=V reverse current VR=V
VDM= 0.67 × V voltage
exponential waveform; see
R
GK
DRM(max)
DRM(max) RRM(max)
; Tj= 125 °C - 0.1 0.5 mA ; Tj= 125 °C - 0.1 0.5 mA
DRM(max)
= 100 200 1000 - V/µs
;
; Tj= 125 °C;
Figure 12
0.25 0.4 - V
gate open circuit 50 130 - V/µs
gate-controlled turn-on time
commutated turn-off time
ITM= 40 A; VD=V
I
= 100 mA; dIG/dt = 5 A/µs
G
VDM= 0.67 × V
I
= 20 A; VR=25V;
TM
(dI
/dt)M=30A/µs; dVD/dt = 50 V/µs;
T
R
= 100
GK
DRM(max)
DRM(max)
;
; Tj= 125 °C;
-2-µs
-70-µs
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 6 of 12
Page 7
NXP Semiconductors
BT151 series L and R
Thyristors
1.6
V
GT
V
GT(25°C)
1.2
0.8
0.4
50 150100050
001aaa953
Tj (°C)
Fig 7. Normalizedgatetrigger voltageas a function of
junction temperature
001aaa959
(A)
30
I
T
3
I
GT
I
GT(25°C)
2
1
0
50 150100050
001aaa952
Tj (°C)
Fig 8. Normalizedgate trigger current as a function of
junction temperature
001aaa951
I
I
L(25°C)
3
L
20
(3)(2)(1)
10
0
021.50.5 1 VT (V)
Vo= 1.06 V
Rs= 0.0304 (1) Tj= 125 °C; typical values (2) Tj= 125 °C; maximum values (3) Tj=25°C; maximum values
Fig 9. On-state current as a function of on-state
voltage
2
1
0
50 150100050 Tj (°C)
Fig 10. Normalized latching current as a function of
junction temperature
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 7 of 12
Page 8
NXP Semiconductors
BT151 series L and R
Thyristors
3
I
H
I
H(25°C)
2
1
0
50 150100050
001aaa950
Tj (°C)
Fig 11. Normalized holding current as a function of
junction temperature
4
10
dVD/dt
(V/µs)
3
10
2
10
10
0 15010050
(1)
(2)
001aaa949
(°C)
T
j
(1) RGK= 100 (2) Gate open circuit
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum values
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 8 of 12
Page 9
NXP Semiconductors
BT151 series L and R
Thyristors

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
AE
p
A
1
q
D
1
D
L
1
b
L
1
L
2
mounting
base
Q
123
b
e
e
0 5 10 mm
scale
c
DIMENSIONS (mm are the original dimensions)
L
b
A
4.7
4.1
A
1.40
1.25
1
UNIT
mm
OUTLINE
VERSION
SOT78 SC-463-lead TO-220AB
b
c
1
1.45
1.00
0.7
0.4
0.9
0.6
IEC JEDEC JEITA
D
D
16.0
6.6
15.2
5.9
REFERENCES
e
E
1
10.3
9.7
2.54
L
15.0
12.8
3.30
2.79
2
L
1
max.
3.0
p
qQ
3.8
3.0
3.5
2.7
EUROPEAN
PROJECTION
2.6
2.2
ISSUE DATE
05-03-22 05-10-25
Fig 13. Package outline SOT78 (TO-220AB)
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 9 of 12
Page 10
NXP Semiconductors
BT151 series L and R
Thyristors

8. Revision history

Table 6. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BT151_SER_L_R_4 20061023 Product data sheet - BT151_SERIES_3 Modifications:
BT151_SERIES_3 (9397 750 13159)
BT151_SERIES_2 19990601 Product specification - BT151_SERIES_1 BT151_SERIES_1 19970901 Product specification - -
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Added type numbers BT151-500L and BT151-650L
20040607 Product specification - BT151_SERIES_2
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 10 of 12
Page 11
NXP Semiconductors

9. Legal information

9.1 Data sheet status

BT151 series L and R
Thyristors
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The productstatus of device(s) described in this documentmay have changedsince this document was published and may differin case of multiple devices. Thelatest product status
information is available on the Internet at URL
[1][2]
Product status
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information includedherein and shallhave noliability for theconsequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with thesame product typenumber(s) and title.A short datasheet is intended for quickreference only andshould not be reliedupon to contain detailedand full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and
reliable. However,NXP Semiconductors does notgive any representationsor warranties, expressed or implied,as to the accuracyor completeness ofsuch information and shall have no liability for the consequences of use of such information.
Right to make changes — NXP Semiconductors reservesthe right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. Thisdocument supersedes and replacesall information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction ofa NXP Semiconductorsproduct canreasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the AbsoluteMaximum Ratings System ofIEC 60134) may causepermanent damage tothe device. Limitingvalues are stressratings only andoperation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold subject to the generalterms and conditions ofcommercial sale, as published at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implicationof any license underany copyrights, patents or other industrial or intellectual property rights.

9.4 Trademarks

Notice: Allreferenced brands,product names,service namesand trademarks are the property of their respective owners.

10. Contact information

For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BT151_SER_L_R_4 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 04 — 23 October 2006 11 of 12
Page 12
NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Contact information. . . . . . . . . . . . . . . . . . . . . 11
11 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
BT151 series L and R
Thyristors
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 October 2006
Document identifier: BT151_SER_L_R_4
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